JPS5263691A - Production of semiconductor integrated circuit device - Google Patents

Production of semiconductor integrated circuit device

Info

Publication number
JPS5263691A
JPS5263691A JP50139894A JP13989475A JPS5263691A JP S5263691 A JPS5263691 A JP S5263691A JP 50139894 A JP50139894 A JP 50139894A JP 13989475 A JP13989475 A JP 13989475A JP S5263691 A JPS5263691 A JP S5263691A
Authority
JP
Japan
Prior art keywords
production
integrated circuit
semiconductor integrated
circuit device
increase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50139894A
Other languages
Japanese (ja)
Inventor
Haruyasu Yamada
Toyoki Takemoto
Atsushi Shibata
Tsutomu Fujita
Toshiki Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP50139894A priority Critical patent/JPS5263691A/en
Publication of JPS5263691A publication Critical patent/JPS5263691A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE: To increase the current amplification factor of the upon transistor of an I2L element by making the depth of the buried layer of the I2L element shallower than the buried layer of the bipolar transistor to form by separate ion implantation method in order to increase the electron injection efficiency from emitter.
COPYRIGHT: (C)1977,JPO&Japio
JP50139894A 1975-11-20 1975-11-20 Production of semiconductor integrated circuit device Pending JPS5263691A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50139894A JPS5263691A (en) 1975-11-20 1975-11-20 Production of semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50139894A JPS5263691A (en) 1975-11-20 1975-11-20 Production of semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS5263691A true JPS5263691A (en) 1977-05-26

Family

ID=15256076

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50139894A Pending JPS5263691A (en) 1975-11-20 1975-11-20 Production of semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5263691A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS533781A (en) * 1976-06-30 1978-01-13 Mitsubishi Electric Corp Semiconductor integrated circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS533781A (en) * 1976-06-30 1978-01-13 Mitsubishi Electric Corp Semiconductor integrated circuit

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