JPS5511330A - Semiconductor device having continuous junction - Google Patents
Semiconductor device having continuous junctionInfo
- Publication number
- JPS5511330A JPS5511330A JP8346878A JP8346878A JPS5511330A JP S5511330 A JPS5511330 A JP S5511330A JP 8346878 A JP8346878 A JP 8346878A JP 8346878 A JP8346878 A JP 8346878A JP S5511330 A JPS5511330 A JP S5511330A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- silicon
- boundary level
- single crystal
- hydrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Photoreceptors In Electrophotography (AREA)
- Bipolar Transistors (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE: To make it possible to shift energy band continuously or vertually continuously, by adding to a non-single crystal semiconductor a material that neutralizes the boundary level.
CONSTITUTION: Amorphous or polycrystalline non-single crystal film is formed on a semiconductor or insulator, by using a material that becomes a semiconductor, such as silicon and silicified gas. Next, on top of this, non-single crystal film consisting of silicon, to which hydrogen, heavy hydrogen, or a halogen compound, such as of chlorine is added. These substances bond with the unpaired bonding hands of silicon, suppress the occurrence of re-bonding center and neutralizes the boundary level. Further, carbon, nitrogen, and oxygen are dispersed and added to the semiconductor. As a result, there is no boundary level, and even if it is placed adjacent to a semiconductor having a different energy band, it is possible to suppress the occurrence of a boundary level due to a dissimilar lattices. For semiconductor materials, germanium, hydrogen carbide, a compound semiconductor, besides silicon, may be used.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8346878A JPS5511330A (en) | 1978-07-08 | 1978-07-08 | Semiconductor device having continuous junction |
US06/055,650 US4254429A (en) | 1978-07-08 | 1979-07-09 | Hetero junction semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8346878A JPS5511330A (en) | 1978-07-08 | 1978-07-08 | Semiconductor device having continuous junction |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7025279A Division JPS5511397A (en) | 1979-06-05 | 1979-06-05 | Semiconductor device with continuous connection and its production method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5511330A true JPS5511330A (en) | 1980-01-26 |
Family
ID=13803294
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8346878A Pending JPS5511330A (en) | 1978-07-08 | 1978-07-08 | Semiconductor device having continuous junction |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5511330A (en) |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5780781A (en) * | 1980-11-08 | 1982-05-20 | Mitsubishi Electric Corp | Phototransistor |
JPS5837648A (en) * | 1981-07-17 | 1983-03-04 | プラズマ・フイジクス・コ−ポレ−シヨン | Glow discharge method and apparatus and photosensitive body device prepared thereby |
JPS59211267A (en) * | 1983-05-17 | 1984-11-30 | Toshiba Corp | Hetero junction bipolar transistor |
JPS61100930A (en) * | 1984-10-24 | 1986-05-19 | Hitachi Ltd | Position detecting method |
JPS62170968A (en) * | 1986-01-23 | 1987-07-28 | Hitachi Ltd | Amorphous silicon electrophotographic sensitive body and its production |
JPS63107620U (en) * | 1986-12-27 | 1988-07-11 | ||
JPH0275024U (en) * | 1988-11-29 | 1990-06-08 | ||
US5262350A (en) * | 1980-06-30 | 1993-11-16 | Semiconductor Energy Laboratory Co., Ltd. | Forming a non single crystal semiconductor layer by using an electric current |
JPH06282088A (en) * | 1993-12-22 | 1994-10-07 | Semiconductor Energy Lab Co Ltd | Production of photosensitive body |
JPH06282087A (en) * | 1993-12-22 | 1994-10-07 | Semiconductor Energy Lab Co Ltd | Electronic exposure device |
JPH07202254A (en) * | 1993-12-28 | 1995-08-04 | Nec Corp | Semiconductor photodetector |
US5591987A (en) * | 1980-03-03 | 1997-01-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor MIS field effect transistor with semi-amorphous semiconductor material |
US5859443A (en) * | 1980-06-30 | 1999-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US6355941B1 (en) * | 1980-06-30 | 2002-03-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US6900463B1 (en) | 1980-06-30 | 2005-05-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2007311475A (en) * | 2006-05-17 | 2007-11-29 | Univ Of Tokushima | Semiconductor photodetector |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5216990A (en) * | 1975-07-28 | 1977-02-08 | Rca Corp | Semiconductor device |
-
1978
- 1978-07-08 JP JP8346878A patent/JPS5511330A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5216990A (en) * | 1975-07-28 | 1977-02-08 | Rca Corp | Semiconductor device |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5591987A (en) * | 1980-03-03 | 1997-01-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor MIS field effect transistor with semi-amorphous semiconductor material |
US6900463B1 (en) | 1980-06-30 | 2005-05-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US6355941B1 (en) * | 1980-06-30 | 2002-03-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US5262350A (en) * | 1980-06-30 | 1993-11-16 | Semiconductor Energy Laboratory Co., Ltd. | Forming a non single crystal semiconductor layer by using an electric current |
US5859443A (en) * | 1980-06-30 | 1999-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JPS5780781A (en) * | 1980-11-08 | 1982-05-20 | Mitsubishi Electric Corp | Phototransistor |
JPS5837648A (en) * | 1981-07-17 | 1983-03-04 | プラズマ・フイジクス・コ−ポレ−シヨン | Glow discharge method and apparatus and photosensitive body device prepared thereby |
JPS59211267A (en) * | 1983-05-17 | 1984-11-30 | Toshiba Corp | Hetero junction bipolar transistor |
JPH0315353B2 (en) * | 1983-05-17 | 1991-02-28 | Tokyo Shibaura Electric Co | |
JPS61100930A (en) * | 1984-10-24 | 1986-05-19 | Hitachi Ltd | Position detecting method |
JPH0312451B2 (en) * | 1984-10-24 | 1991-02-20 | Hitachi Ltd | |
JPS62170968A (en) * | 1986-01-23 | 1987-07-28 | Hitachi Ltd | Amorphous silicon electrophotographic sensitive body and its production |
JPS63107620U (en) * | 1986-12-27 | 1988-07-11 | ||
JPH0275024U (en) * | 1988-11-29 | 1990-06-08 | ||
JPH06282087A (en) * | 1993-12-22 | 1994-10-07 | Semiconductor Energy Lab Co Ltd | Electronic exposure device |
JPH06282088A (en) * | 1993-12-22 | 1994-10-07 | Semiconductor Energy Lab Co Ltd | Production of photosensitive body |
JPH07202254A (en) * | 1993-12-28 | 1995-08-04 | Nec Corp | Semiconductor photodetector |
JP2007311475A (en) * | 2006-05-17 | 2007-11-29 | Univ Of Tokushima | Semiconductor photodetector |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5511329A (en) | Semiconductor device | |
JPS5511330A (en) | Semiconductor device having continuous junction | |
JPS5587444A (en) | Method of forming insulating film on semiconductor surface | |
JPS543479A (en) | Semiconductor device and its manufacture | |
JPS5247673A (en) | Process for production of silicon crystal film | |
JPS5527612A (en) | Silicon base | |
JPS5380985A (en) | Semiconductor device | |
JPS5233480A (en) | Semiconductor device | |
JPS5327371A (en) | Sos semiconductor device | |
JPS5382275A (en) | Production of semiconductor device | |
JPS5234668A (en) | Gaseous phase growing process of semiconductor | |
JPS53146299A (en) | Production of silicon carbide substrate | |
JPS5258363A (en) | Formation of semiconductor layer | |
JPS51145267A (en) | Manufacture of semiconductor device | |
JPS5354384A (en) | Method for slicing semi-conductor ingots | |
JPS5257098A (en) | Method for fabrication of gallium arsenide having steep distribution o f impurity concentration | |
JPS5378775A (en) | Preparation for semiconductor device | |
JPS5645897A (en) | Manufacture of silicon carbide crystal | |
JPS54152464A (en) | Preventing method for occurrence of crystal defect of silicon single-crystal substrate | |
JPS52137275A (en) | Separation of semiconductor elements | |
JPS5326663A (en) | Manu facture of semiconductor device | |
JPS5328374A (en) | Wafer production | |
JPS5591815A (en) | Silicon epitaxial growth | |
JPS5469062A (en) | Vapor growth method for magnespinel | |
JPS5317283A (en) | Production of semiconductor device |