JPS5472987A - Manufacture of field effect transistor of insulation gate type - Google Patents

Manufacture of field effect transistor of insulation gate type

Info

Publication number
JPS5472987A
JPS5472987A JP13998477A JP13998477A JPS5472987A JP S5472987 A JPS5472987 A JP S5472987A JP 13998477 A JP13998477 A JP 13998477A JP 13998477 A JP13998477 A JP 13998477A JP S5472987 A JPS5472987 A JP S5472987A
Authority
JP
Japan
Prior art keywords
film
sio
region
type
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13998477A
Other languages
Japanese (ja)
Inventor
Takeaki Okabe
Minoru Nagata
Shikayuki Ochi
Isao Yoshida
Hideshi Ito
Masatomo Furuumi
Masaru Takeuchi
Satoshi Meguro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13998477A priority Critical patent/JPS5472987A/en
Publication of JPS5472987A publication Critical patent/JPS5472987A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a high-dielectric strength IGFET with the series resistance of the gate electrode lowered, by using not a gate electrode but a thick insulating film as an impurity-ion implantation mask at the time of forming an off-set gate.
CONSTITUTION: Onto P-type Si substrate 1, Si3N4 film 12 is adhered and photoetched into a fixed shape, which is used as a mask for implanting N-type impurity ions, thereby forming N--type region 14 which determines the dielectric strength of this IGFET. Next, substrate 1 is heated in an oxidation atmosphere while selecting the processing time to grown thick SiO2 film 15 only in region 14. Then, film 12 is removed partially to expose surfaces 16 and 17 where film 15 does not reside, and N+-type source 5 is diffusion-formed in substrate 1 covering one region completely and nearly a half the other drain region 6. Next, remaining film 12 is all removed, SiO2 film 18 and SiO2 film 20 are adhered onto regions 5 and 6 respectively, and gate SiO2 film 19 is also adhered between them.
COPYRIGHT: (C)1979,JPO&Japio
JP13998477A 1977-11-24 1977-11-24 Manufacture of field effect transistor of insulation gate type Pending JPS5472987A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13998477A JPS5472987A (en) 1977-11-24 1977-11-24 Manufacture of field effect transistor of insulation gate type

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13998477A JPS5472987A (en) 1977-11-24 1977-11-24 Manufacture of field effect transistor of insulation gate type

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP59054218A Division JPS59197174A (en) 1984-03-23 1984-03-23 Mis type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5472987A true JPS5472987A (en) 1979-06-11

Family

ID=15258225

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13998477A Pending JPS5472987A (en) 1977-11-24 1977-11-24 Manufacture of field effect transistor of insulation gate type

Country Status (1)

Country Link
JP (1) JPS5472987A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5789256A (en) * 1980-11-25 1982-06-03 Nec Corp Manufacture of insulation gate type field effect transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5789256A (en) * 1980-11-25 1982-06-03 Nec Corp Manufacture of insulation gate type field effect transistor

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