JPS5472987A - Manufacture of field effect transistor of insulation gate type - Google Patents
Manufacture of field effect transistor of insulation gate typeInfo
- Publication number
- JPS5472987A JPS5472987A JP13998477A JP13998477A JPS5472987A JP S5472987 A JPS5472987 A JP S5472987A JP 13998477 A JP13998477 A JP 13998477A JP 13998477 A JP13998477 A JP 13998477A JP S5472987 A JPS5472987 A JP S5472987A
- Authority
- JP
- Japan
- Prior art keywords
- film
- sio
- region
- type
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To obtain a high-dielectric strength IGFET with the series resistance of the gate electrode lowered, by using not a gate electrode but a thick insulating film as an impurity-ion implantation mask at the time of forming an off-set gate.
CONSTITUTION: Onto P-type Si substrate 1, Si3N4 film 12 is adhered and photoetched into a fixed shape, which is used as a mask for implanting N-type impurity ions, thereby forming N--type region 14 which determines the dielectric strength of this IGFET. Next, substrate 1 is heated in an oxidation atmosphere while selecting the processing time to grown thick SiO2 film 15 only in region 14. Then, film 12 is removed partially to expose surfaces 16 and 17 where film 15 does not reside, and N+-type source 5 is diffusion-formed in substrate 1 covering one region completely and nearly a half the other drain region 6. Next, remaining film 12 is all removed, SiO2 film 18 and SiO2 film 20 are adhered onto regions 5 and 6 respectively, and gate SiO2 film 19 is also adhered between them.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13998477A JPS5472987A (en) | 1977-11-24 | 1977-11-24 | Manufacture of field effect transistor of insulation gate type |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13998477A JPS5472987A (en) | 1977-11-24 | 1977-11-24 | Manufacture of field effect transistor of insulation gate type |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59054218A Division JPS59197174A (en) | 1984-03-23 | 1984-03-23 | Mis type semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5472987A true JPS5472987A (en) | 1979-06-11 |
Family
ID=15258225
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13998477A Pending JPS5472987A (en) | 1977-11-24 | 1977-11-24 | Manufacture of field effect transistor of insulation gate type |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5472987A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5789256A (en) * | 1980-11-25 | 1982-06-03 | Nec Corp | Manufacture of insulation gate type field effect transistor |
-
1977
- 1977-11-24 JP JP13998477A patent/JPS5472987A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5789256A (en) * | 1980-11-25 | 1982-06-03 | Nec Corp | Manufacture of insulation gate type field effect transistor |
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