JPS564281A - Insulated gate type field effect transistor - Google Patents
Insulated gate type field effect transistorInfo
- Publication number
- JPS564281A JPS564281A JP8003679A JP8003679A JPS564281A JP S564281 A JPS564281 A JP S564281A JP 8003679 A JP8003679 A JP 8003679A JP 8003679 A JP8003679 A JP 8003679A JP S564281 A JPS564281 A JP S564281A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- annular
- transistor
- drain region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title abstract 2
- 239000012535 impurity Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
Abstract
PURPOSE:To provide an insulated gate type field effect transistor having high withstand voltage by forming the transistor (IGFET) of a circular drain region, a region having the same conducting type as the drain region and making contact therewith low impurity density, and an annular source region having the same conducting type as the drain region spaced therefrom. CONSTITUTION:A circular N<+>-type drain region 22 is diffused at the center of a P-type semiconductor substrate 21, and an N<->-type annular region 23 having lower density in impurity than the region 22 and shallower diffusing depth in N<->-type annular region 23 than the region 22 is formed around the region 22. Then, a similarly annular N<+>-type source region 24 to the substrate 21 spaced from the region 23 is diffused in the substrate 21, and a similarly annular gate electrode 25 is mounted through an annular gate oxide film 26 between the regions 22 and 24 to form an IGFET. When an ion is implanted to the outside of the region 24 to form a P<+>-type channel cut region 27 and a thick field oxide film is coated thereon in this manner, no impurity density is altered in the respective regions to eliminate the decrease of the withstand voltage in the transistor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8003679A JPS564281A (en) | 1979-06-25 | 1979-06-25 | Insulated gate type field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8003679A JPS564281A (en) | 1979-06-25 | 1979-06-25 | Insulated gate type field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS564281A true JPS564281A (en) | 1981-01-17 |
Family
ID=13707021
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8003679A Pending JPS564281A (en) | 1979-06-25 | 1979-06-25 | Insulated gate type field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS564281A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4651186A (en) * | 1981-11-18 | 1987-03-17 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor with improved withstand voltage characteristic |
-
1979
- 1979-06-25 JP JP8003679A patent/JPS564281A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4651186A (en) * | 1981-11-18 | 1987-03-17 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor with improved withstand voltage characteristic |
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