JPS5789256A - Manufacture of insulation gate type field effect transistor - Google Patents
Manufacture of insulation gate type field effect transistorInfo
- Publication number
- JPS5789256A JPS5789256A JP16608380A JP16608380A JPS5789256A JP S5789256 A JPS5789256 A JP S5789256A JP 16608380 A JP16608380 A JP 16608380A JP 16608380 A JP16608380 A JP 16608380A JP S5789256 A JPS5789256 A JP S5789256A
- Authority
- JP
- Japan
- Prior art keywords
- insulation
- regions
- region
- film
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009413 insulation Methods 0.000 title abstract 7
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000002184 metal Substances 0.000 abstract 5
- 239000012535 impurity Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 239000006185 dispersion Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
Abstract
PURPOSE:To obtain a MOS with a high break-down voltage and without dispersion by forming an offset gate region on the both sides of a gate electrode bringing in impurity using the gate electrode as a mask, then the region is covered with an insulation layer and a source and a drain regions are formed. CONSTITUTION:An insulation film 42 of 1mu thickness is formed on a silicon substrate 41 in a part where no element regions are to be formed and an insulation film of 400-1,000Angstrom thickess is formed on a part where element regions are to be formed. After a metal film 44 and an insulation film 45, which are to be a gate electrode, are laminated, the metal is removed except for the first metal film 442 and the second metal film 443. An offset gate regions 46, 47 are formed by injecting impurity using a remaining metal film as a mask and a thick insulation film 481, 482 cover these regions. The insulation films 481, 482 are a part of a mask in forming the source region 50 and the drain region 49.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16608380A JPS5789256A (en) | 1980-11-25 | 1980-11-25 | Manufacture of insulation gate type field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16608380A JPS5789256A (en) | 1980-11-25 | 1980-11-25 | Manufacture of insulation gate type field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5789256A true JPS5789256A (en) | 1982-06-03 |
Family
ID=15824661
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16608380A Pending JPS5789256A (en) | 1980-11-25 | 1980-11-25 | Manufacture of insulation gate type field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5789256A (en) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5272582A (en) * | 1975-12-15 | 1977-06-17 | Matsushita Electric Ind Co Ltd | Production of semiconductor device |
JPS5448178A (en) * | 1977-09-26 | 1979-04-16 | Hitachi Ltd | Manufacture of mos semiconductor device |
JPS5472987A (en) * | 1977-11-24 | 1979-06-11 | Hitachi Ltd | Manufacture of field effect transistor of insulation gate type |
JPS5591130A (en) * | 1978-12-27 | 1980-07-10 | Matsushita Electric Ind Co Ltd | Production of semiconductor device |
-
1980
- 1980-11-25 JP JP16608380A patent/JPS5789256A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5272582A (en) * | 1975-12-15 | 1977-06-17 | Matsushita Electric Ind Co Ltd | Production of semiconductor device |
JPS5448178A (en) * | 1977-09-26 | 1979-04-16 | Hitachi Ltd | Manufacture of mos semiconductor device |
JPS5472987A (en) * | 1977-11-24 | 1979-06-11 | Hitachi Ltd | Manufacture of field effect transistor of insulation gate type |
JPS5591130A (en) * | 1978-12-27 | 1980-07-10 | Matsushita Electric Ind Co Ltd | Production of semiconductor device |
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