JPS5418685A - Manufacture of field effect type semiconductor device - Google Patents

Manufacture of field effect type semiconductor device

Info

Publication number
JPS5418685A
JPS5418685A JP8293377A JP8293377A JPS5418685A JP S5418685 A JPS5418685 A JP S5418685A JP 8293377 A JP8293377 A JP 8293377A JP 8293377 A JP8293377 A JP 8293377A JP S5418685 A JPS5418685 A JP S5418685A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
type semiconductor
field effect
effect type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8293377A
Other languages
Japanese (ja)
Other versions
JPS6044831B2 (en
Inventor
Koichiro Kishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8293377A priority Critical patent/JPS6044831B2/en
Publication of JPS5418685A publication Critical patent/JPS5418685A/en
Publication of JPS6044831B2 publication Critical patent/JPS6044831B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To eliminate the crystalline defect as well as to reduce the noise by forming the source and drain regions on the semiconductor substrate with the electrode attached respectively and then injecting the impurity ion and H2 ion at part of the source and drain regions with an annealing process given.
COPYRIGHT: (C)1979,JPO&Japio
JP8293377A 1977-07-13 1977-07-13 Method for manufacturing field effect semiconductor device Expired JPS6044831B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8293377A JPS6044831B2 (en) 1977-07-13 1977-07-13 Method for manufacturing field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8293377A JPS6044831B2 (en) 1977-07-13 1977-07-13 Method for manufacturing field effect semiconductor device

Publications (2)

Publication Number Publication Date
JPS5418685A true JPS5418685A (en) 1979-02-10
JPS6044831B2 JPS6044831B2 (en) 1985-10-05

Family

ID=13788022

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8293377A Expired JPS6044831B2 (en) 1977-07-13 1977-07-13 Method for manufacturing field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS6044831B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5884460A (en) * 1981-11-13 1983-05-20 Oki Electric Ind Co Ltd Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5884460A (en) * 1981-11-13 1983-05-20 Oki Electric Ind Co Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS6044831B2 (en) 1985-10-05

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