JPS55141752A - Semiconductor device and fabricating method of the same - Google Patents

Semiconductor device and fabricating method of the same

Info

Publication number
JPS55141752A
JPS55141752A JP4903379A JP4903379A JPS55141752A JP S55141752 A JPS55141752 A JP S55141752A JP 4903379 A JP4903379 A JP 4903379A JP 4903379 A JP4903379 A JP 4903379A JP S55141752 A JPS55141752 A JP S55141752A
Authority
JP
Japan
Prior art keywords
type
layer
forming
semiconductor
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4903379A
Other languages
Japanese (ja)
Inventor
Akira Muramatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP4903379A priority Critical patent/JPS55141752A/en
Publication of JPS55141752A publication Critical patent/JPS55141752A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To enhance the integrity of and the operating speed of an I<2>L by forming a p-type region on an n-type semiconductor substrate, forming a plurality of rows of n-type regions at predetermined interval and forming an insulating film for crossing the semiconductor regions of the respective rows. CONSTITUTION:An n<+>-type buried layer 5 and an n-type epitaxial layer 6 are formed on a p<->-type silicon crystal substrate 4. Then, a p-type base layer 2 is formed on the surface of the n-type epitaxial layer 6, and an n<+>-type collector layer 3 is formed in lateral streak state on the surface of the layer 2. Thereafter, a deeper fine groove 8 than the p-type base layer 2 is so formed as to cross longitudinally the lateral streak of the layers 2 and 3, and a semiconductor oxide film 9 is so formed as to bury the groove 8.
JP4903379A 1979-04-23 1979-04-23 Semiconductor device and fabricating method of the same Pending JPS55141752A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4903379A JPS55141752A (en) 1979-04-23 1979-04-23 Semiconductor device and fabricating method of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4903379A JPS55141752A (en) 1979-04-23 1979-04-23 Semiconductor device and fabricating method of the same

Publications (1)

Publication Number Publication Date
JPS55141752A true JPS55141752A (en) 1980-11-05

Family

ID=12819771

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4903379A Pending JPS55141752A (en) 1979-04-23 1979-04-23 Semiconductor device and fabricating method of the same

Country Status (1)

Country Link
JP (1) JPS55141752A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004103793A (en) * 2002-09-09 2004-04-02 Denso Corp Semiconductor device and its manufacturing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004103793A (en) * 2002-09-09 2004-04-02 Denso Corp Semiconductor device and its manufacturing method

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