JPS55151333A - Fabricating method of semiconductor device - Google Patents
Fabricating method of semiconductor deviceInfo
- Publication number
- JPS55151333A JPS55151333A JP5931879A JP5931879A JPS55151333A JP S55151333 A JPS55151333 A JP S55151333A JP 5931879 A JP5931879 A JP 5931879A JP 5931879 A JP5931879 A JP 5931879A JP S55151333 A JPS55151333 A JP S55151333A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- treated
- compound
- container
- gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 150000001875 compounds Chemical class 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- 230000006866 deterioration Effects 0.000 abstract 2
- 230000000737 periodic effect Effects 0.000 abstract 2
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
Landscapes
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To prevent the deterioration of the surface of compound semiconductor by placing the monocrystal or polycrystal of the compound semiconductor of the same composition in the same container when heating the group III-V metals or II-VI compound semiconductors in the Periodic Table and regulating the vapor pressure therein. CONSTITUTION:When forming GaAs-FET, Si<+> ion is implanted to the doped semi- insulating GaAs substrate 1, it is annealed necessarily to be heat treated. At this time monocrystal or polycrystal GaAs dummy wafer 2 having the same composition as the substrate to be treated between the substrates 1 to be treated in the container 4. In this manner, the same type of element vapor is filled as the substrate to be treated and evaporated from the dummy wafer 2 in the container 4. Therefore, it can suppress the evaporation of the component elements from the surface of the substrate to prevent the deterioration of the surface thereof, and the compound of other groups III-V in the Periodic Table and the group II-VI compound can also be similarly applied thereto.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5931879A JPS55151333A (en) | 1979-05-15 | 1979-05-15 | Fabricating method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5931879A JPS55151333A (en) | 1979-05-15 | 1979-05-15 | Fabricating method of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55151333A true JPS55151333A (en) | 1980-11-25 |
Family
ID=13109885
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5931879A Pending JPS55151333A (en) | 1979-05-15 | 1979-05-15 | Fabricating method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55151333A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57136330A (en) * | 1981-02-16 | 1982-08-23 | Fujitsu Ltd | Treating method for semiconductor crystal |
JPS5895813A (en) * | 1981-12-01 | 1983-06-07 | Semiconductor Res Found | Processing method for crystal of compound semiconductor |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS492511A (en) * | 1972-04-20 | 1974-01-10 |
-
1979
- 1979-05-15 JP JP5931879A patent/JPS55151333A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS492511A (en) * | 1972-04-20 | 1974-01-10 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57136330A (en) * | 1981-02-16 | 1982-08-23 | Fujitsu Ltd | Treating method for semiconductor crystal |
JPS5895813A (en) * | 1981-12-01 | 1983-06-07 | Semiconductor Res Found | Processing method for crystal of compound semiconductor |
JPH0423418B2 (en) * | 1981-12-01 | 1992-04-22 | Handotai Kenkyu Shinkokai |
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