JPS55151333A - Fabricating method of semiconductor device - Google Patents

Fabricating method of semiconductor device

Info

Publication number
JPS55151333A
JPS55151333A JP5931879A JP5931879A JPS55151333A JP S55151333 A JPS55151333 A JP S55151333A JP 5931879 A JP5931879 A JP 5931879A JP 5931879 A JP5931879 A JP 5931879A JP S55151333 A JPS55151333 A JP S55151333A
Authority
JP
Japan
Prior art keywords
substrate
treated
compound
container
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5931879A
Other languages
Japanese (ja)
Inventor
Toshio Hashimoto
Teruo Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP5931879A priority Critical patent/JPS55151333A/en
Publication of JPS55151333A publication Critical patent/JPS55151333A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Landscapes

  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To prevent the deterioration of the surface of compound semiconductor by placing the monocrystal or polycrystal of the compound semiconductor of the same composition in the same container when heating the group III-V metals or II-VI compound semiconductors in the Periodic Table and regulating the vapor pressure therein. CONSTITUTION:When forming GaAs-FET, Si<+> ion is implanted to the doped semi- insulating GaAs substrate 1, it is annealed necessarily to be heat treated. At this time monocrystal or polycrystal GaAs dummy wafer 2 having the same composition as the substrate to be treated between the substrates 1 to be treated in the container 4. In this manner, the same type of element vapor is filled as the substrate to be treated and evaporated from the dummy wafer 2 in the container 4. Therefore, it can suppress the evaporation of the component elements from the surface of the substrate to prevent the deterioration of the surface thereof, and the compound of other groups III-V in the Periodic Table and the group II-VI compound can also be similarly applied thereto.
JP5931879A 1979-05-15 1979-05-15 Fabricating method of semiconductor device Pending JPS55151333A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5931879A JPS55151333A (en) 1979-05-15 1979-05-15 Fabricating method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5931879A JPS55151333A (en) 1979-05-15 1979-05-15 Fabricating method of semiconductor device

Publications (1)

Publication Number Publication Date
JPS55151333A true JPS55151333A (en) 1980-11-25

Family

ID=13109885

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5931879A Pending JPS55151333A (en) 1979-05-15 1979-05-15 Fabricating method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55151333A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57136330A (en) * 1981-02-16 1982-08-23 Fujitsu Ltd Treating method for semiconductor crystal
JPS5895813A (en) * 1981-12-01 1983-06-07 Semiconductor Res Found Processing method for crystal of compound semiconductor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS492511A (en) * 1972-04-20 1974-01-10

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS492511A (en) * 1972-04-20 1974-01-10

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57136330A (en) * 1981-02-16 1982-08-23 Fujitsu Ltd Treating method for semiconductor crystal
JPS5895813A (en) * 1981-12-01 1983-06-07 Semiconductor Res Found Processing method for crystal of compound semiconductor
JPH0423418B2 (en) * 1981-12-01 1992-04-22 Handotai Kenkyu Shinkokai

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