JPS52127188A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS52127188A
JPS52127188A JP4428276A JP4428276A JPS52127188A JP S52127188 A JPS52127188 A JP S52127188A JP 4428276 A JP4428276 A JP 4428276A JP 4428276 A JP4428276 A JP 4428276A JP S52127188 A JPS52127188 A JP S52127188A
Authority
JP
Japan
Prior art keywords
semiconductor device
layer
group element
semicondutor
crystalization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4428276A
Other languages
Japanese (ja)
Other versions
JPS5424272B2 (en
Inventor
Haruo Nagai
Etsuo Noguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP4428276A priority Critical patent/JPS52127188A/en
Publication of JPS52127188A publication Critical patent/JPS52127188A/en
Publication of JPS5424272B2 publication Critical patent/JPS5424272B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: To improve crystalization and to increase external quantum efficiency by stating value of y as 0.80<y<1 when GayIn1-y As layer is grown epitaxially on (111) A plane of a semicondutor crystal substrate or layer which consists of a 3-group element and 5-group element.
COPYRIGHT: (C)1977,JPO&Japio
JP4428276A 1976-04-19 1976-04-19 Semiconductor device Granted JPS52127188A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4428276A JPS52127188A (en) 1976-04-19 1976-04-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4428276A JPS52127188A (en) 1976-04-19 1976-04-19 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS52127188A true JPS52127188A (en) 1977-10-25
JPS5424272B2 JPS5424272B2 (en) 1979-08-20

Family

ID=12687142

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4428276A Granted JPS52127188A (en) 1976-04-19 1976-04-19 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS52127188A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6303954B1 (en) 1998-06-11 2001-10-16 Nec Corporation Semiconductor device with a high-voltage component in semiconductor on insulator

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
JOURNAL OF APPLIED PHYSICS#N6=1975GB *
JOURNAL OF APPLIED PHYSICS#N6=1975US *
SOLID- STATE ELECTRONICS#N7=1973GB *
SOLID-STATE ELECTRONICS#N7=1973GB *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6303954B1 (en) 1998-06-11 2001-10-16 Nec Corporation Semiconductor device with a high-voltage component in semiconductor on insulator

Also Published As

Publication number Publication date
JPS5424272B2 (en) 1979-08-20

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