JPS52127188A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS52127188A JPS52127188A JP4428276A JP4428276A JPS52127188A JP S52127188 A JPS52127188 A JP S52127188A JP 4428276 A JP4428276 A JP 4428276A JP 4428276 A JP4428276 A JP 4428276A JP S52127188 A JPS52127188 A JP S52127188A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- layer
- group element
- semicondutor
- crystalization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
Abstract
PURPOSE: To improve crystalization and to increase external quantum efficiency by stating value of y as 0.80<y<1 when GayIn1-y As layer is grown epitaxially on (111) A plane of a semicondutor crystal substrate or layer which consists of a 3-group element and 5-group element.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4428276A JPS52127188A (en) | 1976-04-19 | 1976-04-19 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4428276A JPS52127188A (en) | 1976-04-19 | 1976-04-19 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS52127188A true JPS52127188A (en) | 1977-10-25 |
JPS5424272B2 JPS5424272B2 (en) | 1979-08-20 |
Family
ID=12687142
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4428276A Granted JPS52127188A (en) | 1976-04-19 | 1976-04-19 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52127188A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6303954B1 (en) | 1998-06-11 | 2001-10-16 | Nec Corporation | Semiconductor device with a high-voltage component in semiconductor on insulator |
-
1976
- 1976-04-19 JP JP4428276A patent/JPS52127188A/en active Granted
Non-Patent Citations (4)
Title |
---|
JOURNAL OF APPLIED PHYSICS#N6=1975GB * |
JOURNAL OF APPLIED PHYSICS#N6=1975US * |
SOLID- STATE ELECTRONICS#N7=1973GB * |
SOLID-STATE ELECTRONICS#N7=1973GB * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6303954B1 (en) | 1998-06-11 | 2001-10-16 | Nec Corporation | Semiconductor device with a high-voltage component in semiconductor on insulator |
Also Published As
Publication number | Publication date |
---|---|
JPS5424272B2 (en) | 1979-08-20 |
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