JPS54157473A - Vapor reaction method for semiconductor wafer - Google Patents
Vapor reaction method for semiconductor waferInfo
- Publication number
- JPS54157473A JPS54157473A JP6579078A JP6579078A JPS54157473A JP S54157473 A JPS54157473 A JP S54157473A JP 6579078 A JP6579078 A JP 6579078A JP 6579078 A JP6579078 A JP 6579078A JP S54157473 A JPS54157473 A JP S54157473A
- Authority
- JP
- Japan
- Prior art keywords
- carbon
- susceptor
- vapor reaction
- film
- epitaxial layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To reduce occurrence of the crystal defect at the growth layer by coating previously with the Si3N4 film over the exposed surface of the Si wafer mounting susceptor which is used for the vapor reaction.
CONSTITUTION: Susceptor 3 onto which Si wafer 5 is installed obliquely to the gas flow within airtight container 1 for vapor reaction which is surrounded by the heating coil and contains gas introduction tube 2 and gas exhaustion tube 6 at the edge part. In this case, as shown in the separate figure, the entire surface of core material 13a of susceptor composed of carbon or graphite is coated with film 13b of Si3N4 not the ordinary SiC. As a result, the linear thermal expansion coefficient of film 13b becomes 3.6×10-6/°C which is approximate to that of the carbon, thus reducing greatly the heat stress. Furthermore, the impurity gas contained in the carbon never intrudes into the epitaxial layer with no crystal defect caused, thus increasing the life time of the epitaxial layer.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6579078A JPS54157473A (en) | 1978-06-02 | 1978-06-02 | Vapor reaction method for semiconductor wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6579078A JPS54157473A (en) | 1978-06-02 | 1978-06-02 | Vapor reaction method for semiconductor wafer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54157473A true JPS54157473A (en) | 1979-12-12 |
Family
ID=13297168
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6579078A Pending JPS54157473A (en) | 1978-06-02 | 1978-06-02 | Vapor reaction method for semiconductor wafer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54157473A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS631327U (en) * | 1986-06-23 | 1988-01-07 | ||
KR100382370B1 (en) * | 2001-01-12 | 2003-05-09 | 주성엔지니어링(주) | Preventive treatment method of susceptor of CVD device |
-
1978
- 1978-06-02 JP JP6579078A patent/JPS54157473A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS631327U (en) * | 1986-06-23 | 1988-01-07 | ||
KR100382370B1 (en) * | 2001-01-12 | 2003-05-09 | 주성엔지니어링(주) | Preventive treatment method of susceptor of CVD device |
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