JPS54157473A - Vapor reaction method for semiconductor wafer - Google Patents

Vapor reaction method for semiconductor wafer

Info

Publication number
JPS54157473A
JPS54157473A JP6579078A JP6579078A JPS54157473A JP S54157473 A JPS54157473 A JP S54157473A JP 6579078 A JP6579078 A JP 6579078A JP 6579078 A JP6579078 A JP 6579078A JP S54157473 A JPS54157473 A JP S54157473A
Authority
JP
Japan
Prior art keywords
carbon
susceptor
vapor reaction
film
epitaxial layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6579078A
Other languages
Japanese (ja)
Inventor
Noriyoshi Yanagida
Shinichi Suzuki
Kenji Akai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP6579078A priority Critical patent/JPS54157473A/en
Publication of JPS54157473A publication Critical patent/JPS54157473A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To reduce occurrence of the crystal defect at the growth layer by coating previously with the Si3N4 film over the exposed surface of the Si wafer mounting susceptor which is used for the vapor reaction.
CONSTITUTION: Susceptor 3 onto which Si wafer 5 is installed obliquely to the gas flow within airtight container 1 for vapor reaction which is surrounded by the heating coil and contains gas introduction tube 2 and gas exhaustion tube 6 at the edge part. In this case, as shown in the separate figure, the entire surface of core material 13a of susceptor composed of carbon or graphite is coated with film 13b of Si3N4 not the ordinary SiC. As a result, the linear thermal expansion coefficient of film 13b becomes 3.6×10-6/°C which is approximate to that of the carbon, thus reducing greatly the heat stress. Furthermore, the impurity gas contained in the carbon never intrudes into the epitaxial layer with no crystal defect caused, thus increasing the life time of the epitaxial layer.
COPYRIGHT: (C)1979,JPO&Japio
JP6579078A 1978-06-02 1978-06-02 Vapor reaction method for semiconductor wafer Pending JPS54157473A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6579078A JPS54157473A (en) 1978-06-02 1978-06-02 Vapor reaction method for semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6579078A JPS54157473A (en) 1978-06-02 1978-06-02 Vapor reaction method for semiconductor wafer

Publications (1)

Publication Number Publication Date
JPS54157473A true JPS54157473A (en) 1979-12-12

Family

ID=13297168

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6579078A Pending JPS54157473A (en) 1978-06-02 1978-06-02 Vapor reaction method for semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS54157473A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS631327U (en) * 1986-06-23 1988-01-07
KR100382370B1 (en) * 2001-01-12 2003-05-09 주성엔지니어링(주) Preventive treatment method of susceptor of CVD device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS631327U (en) * 1986-06-23 1988-01-07
KR100382370B1 (en) * 2001-01-12 2003-05-09 주성엔지니어링(주) Preventive treatment method of susceptor of CVD device

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