JPS55149197A - Manufacture of silicon carbide substrate - Google Patents
Manufacture of silicon carbide substrateInfo
- Publication number
- JPS55149197A JPS55149197A JP5613379A JP5613379A JPS55149197A JP S55149197 A JPS55149197 A JP S55149197A JP 5613379 A JP5613379 A JP 5613379A JP 5613379 A JP5613379 A JP 5613379A JP S55149197 A JPS55149197 A JP S55149197A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- sic
- temp
- growing
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
PURPOSE: To manufacture an SiC substrate in a simple process at a low cost by growing SiC on an Si substrate at the m.p. of Si or below and melting the Si substrate while contacting a carbon plate which does not absorb Si melt to the Si substrate surface opposite to the SiC growing surface.
CONSTITUTION: Reaction tube 22 is evacuated 32 and replaced with H2, and a surface layer of Si substrate 2 whose principal face is (111) face on carbon stand 66 is removed by etching with known HCl-H2 mixed gas. The temp. of substate 2 is set to the m.p. of Si or below, especially 1,100W1,200°C to grow SiC on substrate 2 by a general vapor phase growing method. Thus, Si-3C type mixed layers 4, 16 of 30μm thickness are formed respectively on the surface and side of substrate 2. Feed of starting material gases is then stopped, an atmosphere of H2 alone is formed, and the temp. of stand 66 is raised to about 1,500°C to melt substrate 2. After the melting the temp. is set to a fixed temp. of about 1,450W1,650°C, and this state is maintained to form single crystal SiC secondary layer 14 of 10μm thickness.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5613379A JPS55149197A (en) | 1979-05-07 | 1979-05-07 | Manufacture of silicon carbide substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5613379A JPS55149197A (en) | 1979-05-07 | 1979-05-07 | Manufacture of silicon carbide substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55149197A true JPS55149197A (en) | 1980-11-20 |
JPS6120519B2 JPS6120519B2 (en) | 1986-05-22 |
Family
ID=13018569
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5613379A Granted JPS55149197A (en) | 1979-05-07 | 1979-05-07 | Manufacture of silicon carbide substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55149197A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4588646A (en) * | 1984-10-15 | 1986-05-13 | Athey Jr Robert D | Protective sheet for articles of clothing and the like |
-
1979
- 1979-05-07 JP JP5613379A patent/JPS55149197A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6120519B2 (en) | 1986-05-22 |
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