JPS55149197A - Manufacture of silicon carbide substrate - Google Patents

Manufacture of silicon carbide substrate

Info

Publication number
JPS55149197A
JPS55149197A JP5613379A JP5613379A JPS55149197A JP S55149197 A JPS55149197 A JP S55149197A JP 5613379 A JP5613379 A JP 5613379A JP 5613379 A JP5613379 A JP 5613379A JP S55149197 A JPS55149197 A JP S55149197A
Authority
JP
Japan
Prior art keywords
substrate
sic
temp
growing
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5613379A
Other languages
Japanese (ja)
Other versions
JPS6120519B2 (en
Inventor
Toshiki Inooku
Takeshi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP5613379A priority Critical patent/JPS55149197A/en
Publication of JPS55149197A publication Critical patent/JPS55149197A/en
Publication of JPS6120519B2 publication Critical patent/JPS6120519B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE: To manufacture an SiC substrate in a simple process at a low cost by growing SiC on an Si substrate at the m.p. of Si or below and melting the Si substrate while contacting a carbon plate which does not absorb Si melt to the Si substrate surface opposite to the SiC growing surface.
CONSTITUTION: Reaction tube 22 is evacuated 32 and replaced with H2, and a surface layer of Si substrate 2 whose principal face is (111) face on carbon stand 66 is removed by etching with known HCl-H2 mixed gas. The temp. of substate 2 is set to the m.p. of Si or below, especially 1,100W1,200°C to grow SiC on substrate 2 by a general vapor phase growing method. Thus, Si-3C type mixed layers 4, 16 of 30μm thickness are formed respectively on the surface and side of substrate 2. Feed of starting material gases is then stopped, an atmosphere of H2 alone is formed, and the temp. of stand 66 is raised to about 1,500°C to melt substrate 2. After the melting the temp. is set to a fixed temp. of about 1,450W1,650°C, and this state is maintained to form single crystal SiC secondary layer 14 of 10μm thickness.
COPYRIGHT: (C)1980,JPO&Japio
JP5613379A 1979-05-07 1979-05-07 Manufacture of silicon carbide substrate Granted JPS55149197A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5613379A JPS55149197A (en) 1979-05-07 1979-05-07 Manufacture of silicon carbide substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5613379A JPS55149197A (en) 1979-05-07 1979-05-07 Manufacture of silicon carbide substrate

Publications (2)

Publication Number Publication Date
JPS55149197A true JPS55149197A (en) 1980-11-20
JPS6120519B2 JPS6120519B2 (en) 1986-05-22

Family

ID=13018569

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5613379A Granted JPS55149197A (en) 1979-05-07 1979-05-07 Manufacture of silicon carbide substrate

Country Status (1)

Country Link
JP (1) JPS55149197A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4588646A (en) * 1984-10-15 1986-05-13 Athey Jr Robert D Protective sheet for articles of clothing and the like

Also Published As

Publication number Publication date
JPS6120519B2 (en) 1986-05-22

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