JPS54127285A - Electron-beam lithography unit - Google Patents

Electron-beam lithography unit

Info

Publication number
JPS54127285A
JPS54127285A JP3418278A JP3418278A JPS54127285A JP S54127285 A JPS54127285 A JP S54127285A JP 3418278 A JP3418278 A JP 3418278A JP 3418278 A JP3418278 A JP 3418278A JP S54127285 A JPS54127285 A JP S54127285A
Authority
JP
Japan
Prior art keywords
electron beam
electron
beam lithography
shield
size
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3418278A
Other languages
Japanese (ja)
Inventor
Kazumitsu Nakamura
Shinjiro Katagiri
Soichiro Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3418278A priority Critical patent/JPS54127285A/en
Publication of JPS54127285A publication Critical patent/JPS54127285A/en
Pending legal-status Critical Current

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  • Electron Beam Exposure (AREA)

Abstract

PURPOSE: To seize the size of an electron beam by measuring the time which corresponds to the electric-current variation caused by a shift in the relative position between the electron beam and a shield.
CONSTITUTION: Electron-beam checker 16 is placed where an electron beam strikes, and in this state, the one-dimensional deflection of the electron beam is done. The electron beam is deflected to pass through the slit of shield 18, so that when the diameter of the slit opening is supposed to be greater than that of the electron beam, the waveform of the electronic current passing though the opening will be shown in the figure. Time t2-t1 or t4-t3 is in proportion to the size of the electron beam.
COPYRIGHT: (C)1979,JPO&Japio
JP3418278A 1978-03-27 1978-03-27 Electron-beam lithography unit Pending JPS54127285A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3418278A JPS54127285A (en) 1978-03-27 1978-03-27 Electron-beam lithography unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3418278A JPS54127285A (en) 1978-03-27 1978-03-27 Electron-beam lithography unit

Publications (1)

Publication Number Publication Date
JPS54127285A true JPS54127285A (en) 1979-10-03

Family

ID=12407050

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3418278A Pending JPS54127285A (en) 1978-03-27 1978-03-27 Electron-beam lithography unit

Country Status (1)

Country Link
JP (1) JPS54127285A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5856418A (en) * 1981-09-30 1983-04-04 Fujitsu Ltd Electron beam exposure apparatus
JPS6197914A (en) * 1984-10-19 1986-05-16 Hitachi Ltd Charged particle beam lithography equipment
US4608493A (en) * 1983-05-09 1986-08-26 Sony Corporation Faraday cup
CN102435128A (en) * 2011-09-01 2012-05-02 上海显恒光电科技股份有限公司 Device and method for measuring beam spot size of electron beam provided with double Faraday cups

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5468149A (en) * 1977-11-11 1979-06-01 Erionikusu Kk Electron ray application device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5468149A (en) * 1977-11-11 1979-06-01 Erionikusu Kk Electron ray application device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5856418A (en) * 1981-09-30 1983-04-04 Fujitsu Ltd Electron beam exposure apparatus
US4608493A (en) * 1983-05-09 1986-08-26 Sony Corporation Faraday cup
JPS6197914A (en) * 1984-10-19 1986-05-16 Hitachi Ltd Charged particle beam lithography equipment
CN102435128A (en) * 2011-09-01 2012-05-02 上海显恒光电科技股份有限公司 Device and method for measuring beam spot size of electron beam provided with double Faraday cups

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