JPS53142876A - Development method of electron ray resist and elctron beam resist - Google Patents

Development method of electron ray resist and elctron beam resist

Info

Publication number
JPS53142876A
JPS53142876A JP5804477A JP5804477A JPS53142876A JP S53142876 A JPS53142876 A JP S53142876A JP 5804477 A JP5804477 A JP 5804477A JP 5804477 A JP5804477 A JP 5804477A JP S53142876 A JPS53142876 A JP S53142876A
Authority
JP
Japan
Prior art keywords
resist
electron ray
development method
elctron
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5804477A
Other languages
Japanese (ja)
Inventor
Kunio Hibino
Kenichi Takeyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP5804477A priority Critical patent/JPS53142876A/en
Publication of JPS53142876A publication Critical patent/JPS53142876A/en
Pending legal-status Critical Current

Links

Landscapes

  • Photoreceptors In Electrophotography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE: To inprove the resolution, etching resistance, and adhesiveness, and also to enable fine machining with high resolution, by using the polymer of itaconic acid diester substituting hydrogen of α position of polymethylmethacrylic acid used as electron ray resist with alkyl carboxylic acid radical, as electron resist.
COPYRIGHT: (C)1978,JPO&Japio
JP5804477A 1977-05-18 1977-05-18 Development method of electron ray resist and elctron beam resist Pending JPS53142876A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5804477A JPS53142876A (en) 1977-05-18 1977-05-18 Development method of electron ray resist and elctron beam resist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5804477A JPS53142876A (en) 1977-05-18 1977-05-18 Development method of electron ray resist and elctron beam resist

Publications (1)

Publication Number Publication Date
JPS53142876A true JPS53142876A (en) 1978-12-12

Family

ID=13072925

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5804477A Pending JPS53142876A (en) 1977-05-18 1977-05-18 Development method of electron ray resist and elctron beam resist

Country Status (1)

Country Link
JP (1) JPS53142876A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62175739A (en) * 1986-01-30 1987-08-01 Toshiba Corp Pattern forming method
JP2017021352A (en) * 2011-02-28 2017-01-26 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ Developer composition and method for forming photolithographic pattern

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62175739A (en) * 1986-01-30 1987-08-01 Toshiba Corp Pattern forming method
JP2017021352A (en) * 2011-02-28 2017-01-26 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ Developer composition and method for forming photolithographic pattern

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