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Hitachi Ltd
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Hitachi Ltd
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Application filed by Hitachi LtdfiledCriticalHitachi Ltd
Priority to JP10996676ApriorityCriticalpatent/JPS5335699A/en
Publication of JPS5335699ApublicationCriticalpatent/JPS5335699A/en
PURPOSE:To grow heteroepitaxial films of thin GaAs and Ga1-x As with a homogeneous proportion of Al, by specifying the thickness of a layer of solutions for growing Ga1-xAlxAs and the thickness of a layer of solutions for growing GaAs respectively, and by bringing dummy crystals into contact with the surface of the solutions.
JP10996676A1976-09-161976-09-16Growing method for heteroepitaxial membrane
PendingJPS5335699A
(en)