JPS52132675A - Vapor-phase growth method of thin film - Google Patents
Vapor-phase growth method of thin filmInfo
- Publication number
- JPS52132675A JPS52132675A JP4850776A JP4850776A JPS52132675A JP S52132675 A JPS52132675 A JP S52132675A JP 4850776 A JP4850776 A JP 4850776A JP 4850776 A JP4850776 A JP 4850776A JP S52132675 A JPS52132675 A JP S52132675A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- vapor
- growth method
- phase growth
- wafers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
PURPOSE:To form uniform thin film on the surfaces of wafers by setting as specified the interval of wafers arranged in the reaction tube, the gap between wafers and the inside wall and the average pressure in the tube.
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4850776A JPS52132675A (en) | 1976-04-30 | 1976-04-30 | Vapor-phase growth method of thin film |
SE7704276A SE432162B (en) | 1976-04-22 | 1977-04-14 | PROCEDURE TO MAKE A THIN FILM TO GROW OUT |
US05/787,495 US4179326A (en) | 1976-04-22 | 1977-04-14 | Process for the vapor growth of a thin film |
GB16011/77A GB1575578A (en) | 1976-04-22 | 1977-04-18 | Process for the vapour deposition of a thin film |
IT22668/77A IT1114781B (en) | 1976-04-22 | 1977-04-20 | PROCESS FOR THE INCREASE, FROM STEAM PHASE, OF A THIN FILM |
DE2718026A DE2718026C3 (en) | 1976-04-22 | 1977-04-22 | Process for coating semiconductor wafers from the vapor phase and their application |
FR7712288A FR2348983A1 (en) | 1976-04-22 | 1977-04-22 | PROCESS FOR DEPOSITING A THIN LAYER IN STEAM FORM |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4850776A JPS52132675A (en) | 1976-04-30 | 1976-04-30 | Vapor-phase growth method of thin film |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS52132675A true JPS52132675A (en) | 1977-11-07 |
JPS5512732B2 JPS5512732B2 (en) | 1980-04-03 |
Family
ID=12805278
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4850776A Granted JPS52132675A (en) | 1976-04-22 | 1976-04-30 | Vapor-phase growth method of thin film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52132675A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6035536U (en) * | 1983-08-18 | 1985-03-11 | 九州日本電気株式会社 | Reduced pressure vapor phase growth equipment |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4626336A (en) * | 1985-05-02 | 1986-12-02 | Hewlett Packard Company | Target for sputter depositing thin films |
-
1976
- 1976-04-30 JP JP4850776A patent/JPS52132675A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6035536U (en) * | 1983-08-18 | 1985-03-11 | 九州日本電気株式会社 | Reduced pressure vapor phase growth equipment |
Also Published As
Publication number | Publication date |
---|---|
JPS5512732B2 (en) | 1980-04-03 |
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