JPS5246761A - Crystal growth method - Google Patents
Crystal growth methodInfo
- Publication number
- JPS5246761A JPS5246761A JP12266575A JP12266575A JPS5246761A JP S5246761 A JPS5246761 A JP S5246761A JP 12266575 A JP12266575 A JP 12266575A JP 12266575 A JP12266575 A JP 12266575A JP S5246761 A JPS5246761 A JP S5246761A
- Authority
- JP
- Japan
- Prior art keywords
- crystal growth
- growth method
- seed crystal
- crystal
- anneal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To contact the saturated solution of a compound semiconductor with seed crystal then anneal the same from the seed crystal side, thereby continuously and largely growing nearly perfect thin-plate-form crystal.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12266575A JPS5246761A (en) | 1975-10-09 | 1975-10-09 | Crystal growth method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12266575A JPS5246761A (en) | 1975-10-09 | 1975-10-09 | Crystal growth method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5246761A true JPS5246761A (en) | 1977-04-13 |
Family
ID=14841593
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12266575A Pending JPS5246761A (en) | 1975-10-09 | 1975-10-09 | Crystal growth method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5246761A (en) |
-
1975
- 1975-10-09 JP JP12266575A patent/JPS5246761A/en active Pending
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