JPS53100770A - Production of epitaxial growth layer - Google Patents
Production of epitaxial growth layerInfo
- Publication number
- JPS53100770A JPS53100770A JP1595277A JP1595277A JPS53100770A JP S53100770 A JPS53100770 A JP S53100770A JP 1595277 A JP1595277 A JP 1595277A JP 1595277 A JP1595277 A JP 1595277A JP S53100770 A JPS53100770 A JP S53100770A
- Authority
- JP
- Japan
- Prior art keywords
- epitaxial growth
- production
- growth layer
- melt
- defects
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE: To form crystal films of good quality without defects by providing a temperature difference of ▵ T between melt and GaAs substrate in a slide type epitaxial growth method.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1595277A JPS53100770A (en) | 1977-02-15 | 1977-02-15 | Production of epitaxial growth layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1595277A JPS53100770A (en) | 1977-02-15 | 1977-02-15 | Production of epitaxial growth layer |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS53100770A true JPS53100770A (en) | 1978-09-02 |
JPS624850B2 JPS624850B2 (en) | 1987-02-02 |
Family
ID=11903077
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1595277A Granted JPS53100770A (en) | 1977-02-15 | 1977-02-15 | Production of epitaxial growth layer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53100770A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04212480A (en) * | 1990-04-18 | 1992-08-04 | Toshiba Corp | Light-emitting element and manufacture thereof |
-
1977
- 1977-02-15 JP JP1595277A patent/JPS53100770A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04212480A (en) * | 1990-04-18 | 1992-08-04 | Toshiba Corp | Light-emitting element and manufacture thereof |
Also Published As
Publication number | Publication date |
---|---|
JPS624850B2 (en) | 1987-02-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS53100770A (en) | Production of epitaxial growth layer | |
JPS5336182A (en) | Thin semiconductor single crystal film forming insulation substrate | |
JPS5361577A (en) | Growing method for horizontally pulled ribbon crystal | |
JPS53105371A (en) | Crystal growing method for potassium arsenide | |
JPS53115181A (en) | Production of semiconductor device | |
JPS52127500A (en) | Production of linb1-taxo3 single crystal film | |
JPS55100295A (en) | Production of single crystal thin film | |
JPS5224165A (en) | Process for growth of ribbon crystal by horizontal drawing | |
JPS5299067A (en) | Semiconductor crystal multilayer continuous growing method | |
JPS52106673A (en) | Crystal growing method and device thereof | |
JPS5211860A (en) | Liquid phase epitaxial device | |
JPS52116070A (en) | Process for lqiuid phase epitaxial growth | |
JPS52117062A (en) | Liquid phase epitaxial growth process | |
JPS52115171A (en) | Liquid phase epitaxial growing method | |
JPS5337184A (en) | Epitaxially growing method in liquid phase | |
JPS52155189A (en) | Multiple layer crystal growth | |
JPS5364465A (en) | Semiconductor crystal production apparatus | |
JPS5387985A (en) | Gaseous phase epitaxial growth method for compound semiconductor crystal | |
JPS5358978A (en) | Growing method for crystal | |
JPS5478377A (en) | Method and apparatus for growing semiconductor crystal | |
JPS51142992A (en) | Semiconductor laser:crystal bring-up method | |
JPS5231665A (en) | Growing method of semiconductor crystal | |
JPS5248483A (en) | Method for production of semiconductor crystal | |
JPS53144474A (en) | Apparatus for producing crystal semiconductor | |
JPS5335699A (en) | Growing method for heteroepitaxial membrane |