JPS53100770A - Production of epitaxial growth layer - Google Patents

Production of epitaxial growth layer

Info

Publication number
JPS53100770A
JPS53100770A JP1595277A JP1595277A JPS53100770A JP S53100770 A JPS53100770 A JP S53100770A JP 1595277 A JP1595277 A JP 1595277A JP 1595277 A JP1595277 A JP 1595277A JP S53100770 A JPS53100770 A JP S53100770A
Authority
JP
Japan
Prior art keywords
epitaxial growth
production
growth layer
melt
defects
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1595277A
Other languages
Japanese (ja)
Other versions
JPS624850B2 (en
Inventor
Morichika Yano
Saburo Yamamoto
Yukio Kurata
Kaneki Matsui
Akira Komuro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP1595277A priority Critical patent/JPS53100770A/en
Publication of JPS53100770A publication Critical patent/JPS53100770A/en
Publication of JPS624850B2 publication Critical patent/JPS624850B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE: To form crystal films of good quality without defects by providing a temperature difference of ▵ T between melt and GaAs substrate in a slide type epitaxial growth method.
COPYRIGHT: (C)1978,JPO&Japio
JP1595277A 1977-02-15 1977-02-15 Production of epitaxial growth layer Granted JPS53100770A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1595277A JPS53100770A (en) 1977-02-15 1977-02-15 Production of epitaxial growth layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1595277A JPS53100770A (en) 1977-02-15 1977-02-15 Production of epitaxial growth layer

Publications (2)

Publication Number Publication Date
JPS53100770A true JPS53100770A (en) 1978-09-02
JPS624850B2 JPS624850B2 (en) 1987-02-02

Family

ID=11903077

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1595277A Granted JPS53100770A (en) 1977-02-15 1977-02-15 Production of epitaxial growth layer

Country Status (1)

Country Link
JP (1) JPS53100770A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04212480A (en) * 1990-04-18 1992-08-04 Toshiba Corp Light-emitting element and manufacture thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04212480A (en) * 1990-04-18 1992-08-04 Toshiba Corp Light-emitting element and manufacture thereof

Also Published As

Publication number Publication date
JPS624850B2 (en) 1987-02-02

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