JPS53148348A - Semiconductor dynamic memory unit - Google Patents

Semiconductor dynamic memory unit

Info

Publication number
JPS53148348A
JPS53148348A JP6382677A JP6382677A JPS53148348A JP S53148348 A JPS53148348 A JP S53148348A JP 6382677 A JP6382677 A JP 6382677A JP 6382677 A JP6382677 A JP 6382677A JP S53148348 A JPS53148348 A JP S53148348A
Authority
JP
Japan
Prior art keywords
memory unit
dynamic memory
semiconductor dynamic
column
refreshed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6382677A
Other languages
Japanese (ja)
Inventor
Tetsuya Iizuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP6382677A priority Critical patent/JPS53148348A/en
Publication of JPS53148348A publication Critical patent/JPS53148348A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To enable the refresh in high speed and with low power and to increase the functional density, by providing shift registers corresponding to each column of the memory cell array, and by sweeping and designating the column to be refreshed with this register.
JP6382677A 1977-05-31 1977-05-31 Semiconductor dynamic memory unit Pending JPS53148348A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6382677A JPS53148348A (en) 1977-05-31 1977-05-31 Semiconductor dynamic memory unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6382677A JPS53148348A (en) 1977-05-31 1977-05-31 Semiconductor dynamic memory unit

Publications (1)

Publication Number Publication Date
JPS53148348A true JPS53148348A (en) 1978-12-23

Family

ID=13240546

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6382677A Pending JPS53148348A (en) 1977-05-31 1977-05-31 Semiconductor dynamic memory unit

Country Status (1)

Country Link
JP (1) JPS53148348A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5698785A (en) * 1979-11-23 1981-08-08 Texas Instruments Inc Semiconductor memory device
JPS57203288A (en) * 1981-06-10 1982-12-13 Nec Corp Memory circuit
EP0170286A2 (en) * 1984-08-03 1986-02-05 Kabushiki Kaisha Toshiba Semiconductor memory device
JPS6177195A (en) * 1985-09-20 1986-04-19 Nec Corp Memory circuit

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5698785A (en) * 1979-11-23 1981-08-08 Texas Instruments Inc Semiconductor memory device
JPH0140435B2 (en) * 1979-11-23 1989-08-29 Texas Instruments Inc
JPS57203288A (en) * 1981-06-10 1982-12-13 Nec Corp Memory circuit
JPH0158598B2 (en) * 1981-06-10 1989-12-12 Nippon Electric Co
EP0170286A2 (en) * 1984-08-03 1986-02-05 Kabushiki Kaisha Toshiba Semiconductor memory device
US4866677A (en) * 1984-08-03 1989-09-12 Kabushiki Kaisha Toshiba Semiconductor memory device with multiple alternating decoders coupled to each word line
JPS6177195A (en) * 1985-09-20 1986-04-19 Nec Corp Memory circuit

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