JPS5258326A - Randam access memory - Google Patents

Randam access memory

Info

Publication number
JPS5258326A
JPS5258326A JP50134369A JP13436975A JPS5258326A JP S5258326 A JPS5258326 A JP S5258326A JP 50134369 A JP50134369 A JP 50134369A JP 13436975 A JP13436975 A JP 13436975A JP S5258326 A JPS5258326 A JP S5258326A
Authority
JP
Japan
Prior art keywords
access memory
randam access
information
randam
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50134369A
Other languages
Japanese (ja)
Inventor
Masaaki Ueno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP50134369A priority Critical patent/JPS5258326A/en
Publication of JPS5258326A publication Critical patent/JPS5258326A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To obtain a RAM with less power consumption, sqeezed pattern size of 2/3, and keeping the same level of memory information, by refreshing the information memorized in memory cells every clock.
JP50134369A 1975-11-07 1975-11-07 Randam access memory Pending JPS5258326A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50134369A JPS5258326A (en) 1975-11-07 1975-11-07 Randam access memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50134369A JPS5258326A (en) 1975-11-07 1975-11-07 Randam access memory

Publications (1)

Publication Number Publication Date
JPS5258326A true JPS5258326A (en) 1977-05-13

Family

ID=15126757

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50134369A Pending JPS5258326A (en) 1975-11-07 1975-11-07 Randam access memory

Country Status (1)

Country Link
JP (1) JPS5258326A (en)

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