Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KKfiledCriticalSeiko Epson Corp
Priority to JP15675375ApriorityCriticalpatent/JPS5280783A/en
Publication of JPS5280783ApublicationCriticalpatent/JPS5280783A/en
PURPOSE: To produce the MOS type semiconductor device of good characteristics by removing the contaminated gate portion of Si caused by an ammonium fluoride etching solution by etching the surface layer of Si.
COPYRIGHT: (C)1977,JPO&Japio
JP15675375A1975-12-271975-12-27Production of mos type semiconductors device
PendingJPS5280783A
(en)