JPS542070A - Manufacture for semiconductor element - Google Patents

Manufacture for semiconductor element

Info

Publication number
JPS542070A
JPS542070A JP6628477A JP6628477A JPS542070A JP S542070 A JPS542070 A JP S542070A JP 6628477 A JP6628477 A JP 6628477A JP 6628477 A JP6628477 A JP 6628477A JP S542070 A JPS542070 A JP S542070A
Authority
JP
Japan
Prior art keywords
semiconductor element
manufacture
annealing
sio
insulation film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6628477A
Other languages
Japanese (ja)
Inventor
Masahide Kudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP6628477A priority Critical patent/JPS542070A/en
Publication of JPS542070A publication Critical patent/JPS542070A/en
Pending legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To manufacture semiconductor element, by performing the annealing of insulation film such as SiO2 with plasma etching.
COPYRIGHT: (C)1979,JPO&Japio
JP6628477A 1977-06-07 1977-06-07 Manufacture for semiconductor element Pending JPS542070A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6628477A JPS542070A (en) 1977-06-07 1977-06-07 Manufacture for semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6628477A JPS542070A (en) 1977-06-07 1977-06-07 Manufacture for semiconductor element

Publications (1)

Publication Number Publication Date
JPS542070A true JPS542070A (en) 1979-01-09

Family

ID=13311368

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6628477A Pending JPS542070A (en) 1977-06-07 1977-06-07 Manufacture for semiconductor element

Country Status (1)

Country Link
JP (1) JPS542070A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5690528A (en) * 1979-12-22 1981-07-22 Chiyou Lsi Gijutsu Kenkyu Kumiai Surface treatment of semiconductor device
JPS57103333A (en) * 1980-12-18 1982-06-26 Toshiba Corp Manufacture of semiconductor device
JPS6482618A (en) * 1987-09-25 1989-03-28 Nec Corp Heat treatment
JPH02103935A (en) * 1988-10-13 1990-04-17 Toshiba Corp Manufacture of semiconductor device
US4952523A (en) * 1985-06-21 1990-08-28 Texas Instruments Incorporated Process for fabricating charge-coupled device with reduced surface state at semiconductor-insulator interface

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5690528A (en) * 1979-12-22 1981-07-22 Chiyou Lsi Gijutsu Kenkyu Kumiai Surface treatment of semiconductor device
JPS57103333A (en) * 1980-12-18 1982-06-26 Toshiba Corp Manufacture of semiconductor device
US4952523A (en) * 1985-06-21 1990-08-28 Texas Instruments Incorporated Process for fabricating charge-coupled device with reduced surface state at semiconductor-insulator interface
JPS6482618A (en) * 1987-09-25 1989-03-28 Nec Corp Heat treatment
JPH02103935A (en) * 1988-10-13 1990-04-17 Toshiba Corp Manufacture of semiconductor device

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