Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co LtdfiledCriticalToshiba Corp
Priority to JP14891075ApriorityCriticalpatent/JPS5272173A/en
Publication of JPS5272173ApublicationCriticalpatent/JPS5272173A/en
PURPOSE: To improve chemical resistance and obtain a semiconductor device of less leak current by cleaning the surface of an Si substrate, then treating the surface with ethyl alcohol to provide protection thence forming a metastable oxide film on the surface through oxidation with nitric acid.
COPYRIGHT: (C)1977,JPO&Japio
JP14891075A1975-12-121975-12-12Semiconductor device and its production
PendingJPS5272173A
(en)