JPS5372571A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5372571A JPS5372571A JP14884576A JP14884576A JPS5372571A JP S5372571 A JPS5372571 A JP S5372571A JP 14884576 A JP14884576 A JP 14884576A JP 14884576 A JP14884576 A JP 14884576A JP S5372571 A JPS5372571 A JP S5372571A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- semiconductor device
- oxidizing
- burning
- flowing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To ensure a clean oxide thick film in a short time by flowing H2 and O2 directly into a tube which is stored into a high anti-pressure container and oxidizing the Si substrate by burning in the high-pressure vapor.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14884576A JPS5372571A (en) | 1976-12-10 | 1976-12-10 | Manufacture of semiconductor device |
US05/859,108 US4154192A (en) | 1976-12-10 | 1977-12-09 | Manufacturing apparatus for semiconductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14884576A JPS5372571A (en) | 1976-12-10 | 1976-12-10 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5372571A true JPS5372571A (en) | 1978-06-28 |
Family
ID=15462013
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14884576A Pending JPS5372571A (en) | 1976-12-10 | 1976-12-10 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5372571A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01280320A (en) * | 1988-05-06 | 1989-11-10 | Tel Sagami Ltd | Semiconductor pressure oxidation |
US5234501A (en) * | 1987-09-01 | 1993-08-10 | Tokyo Electron Sagami Limited | Oxidation metod |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50114179A (en) * | 1974-02-15 | 1975-09-06 |
-
1976
- 1976-12-10 JP JP14884576A patent/JPS5372571A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50114179A (en) * | 1974-02-15 | 1975-09-06 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5234501A (en) * | 1987-09-01 | 1993-08-10 | Tokyo Electron Sagami Limited | Oxidation metod |
JPH01280320A (en) * | 1988-05-06 | 1989-11-10 | Tel Sagami Ltd | Semiconductor pressure oxidation |
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