JPS5372571A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5372571A
JPS5372571A JP14884576A JP14884576A JPS5372571A JP S5372571 A JPS5372571 A JP S5372571A JP 14884576 A JP14884576 A JP 14884576A JP 14884576 A JP14884576 A JP 14884576A JP S5372571 A JPS5372571 A JP S5372571A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
oxidizing
burning
flowing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14884576A
Other languages
Japanese (ja)
Inventor
Natsuo Tsubouchi
Hirokazu Miyoshi
Akira Nishimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14884576A priority Critical patent/JPS5372571A/en
Priority to US05/859,108 priority patent/US4154192A/en
Publication of JPS5372571A publication Critical patent/JPS5372571A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To ensure a clean oxide thick film in a short time by flowing H2 and O2 directly into a tube which is stored into a high anti-pressure container and oxidizing the Si substrate by burning in the high-pressure vapor.
COPYRIGHT: (C)1978,JPO&Japio
JP14884576A 1976-12-10 1976-12-10 Manufacture of semiconductor device Pending JPS5372571A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP14884576A JPS5372571A (en) 1976-12-10 1976-12-10 Manufacture of semiconductor device
US05/859,108 US4154192A (en) 1976-12-10 1977-12-09 Manufacturing apparatus for semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14884576A JPS5372571A (en) 1976-12-10 1976-12-10 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5372571A true JPS5372571A (en) 1978-06-28

Family

ID=15462013

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14884576A Pending JPS5372571A (en) 1976-12-10 1976-12-10 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5372571A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01280320A (en) * 1988-05-06 1989-11-10 Tel Sagami Ltd Semiconductor pressure oxidation
US5234501A (en) * 1987-09-01 1993-08-10 Tokyo Electron Sagami Limited Oxidation metod

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50114179A (en) * 1974-02-15 1975-09-06

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50114179A (en) * 1974-02-15 1975-09-06

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5234501A (en) * 1987-09-01 1993-08-10 Tokyo Electron Sagami Limited Oxidation metod
JPH01280320A (en) * 1988-05-06 1989-11-10 Tel Sagami Ltd Semiconductor pressure oxidation

Similar Documents

Publication Publication Date Title
JPS5372571A (en) Manufacture of semiconductor device
JPS5234671A (en) Semiconductor integrated circuit
JPS5372572A (en) Manufacturing device for semiconductor device
JPS5373072A (en) Formation of oxidized film
JPS51136288A (en) Photo etching using non-crystalline carchogenide glass thin film
JPS52139376A (en) Production of semiconductor device
JPS5324290A (en) Semiconductor device
JPS52109369A (en) Manufacture of semiconductor device
JPS52153383A (en) Preparation of semiconductor device
JPS52141573A (en) Manufacture of semiconductor device
JPS52112281A (en) Manufacture of semiconductor
JPS5210676A (en) Semiconductor device
JPS5348675A (en) Production of semiconductor device
JPS5272173A (en) Semiconductor device and its production
JPS5377168A (en) Production of semiconductor device
JPS5211765A (en) Method of manufacturing semiconductor device
JPS5293270A (en) Manufacture for semiconductor device
JPS5373973A (en) Manufacture for semiconductor device
JPS5333580A (en) Production of semiconductor device
JPS51147177A (en) A treatment method of tantaum oxide
JPS52155972A (en) Production of semiconductor device
JPS51123069A (en) High voltage rating semiconductor device
JPS5329662A (en) Production of semiconductor device
JPS52149067A (en) Glass mold type semiconductor device
JPS5368070A (en) Etching method