JPS5236988A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS5236988A
JPS5236988A JP11336575A JP11336575A JPS5236988A JP S5236988 A JPS5236988 A JP S5236988A JP 11336575 A JP11336575 A JP 11336575A JP 11336575 A JP11336575 A JP 11336575A JP S5236988 A JPS5236988 A JP S5236988A
Authority
JP
Japan
Prior art keywords
semiconductor laser
group
laser
gaasgaalas
active layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11336575A
Other languages
Japanese (ja)
Other versions
JPS5436078B2 (en
Inventor
Hirobumi Namisaki
Hirobumi Suga
Makoto Ishii
Akiko Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11336575A priority Critical patent/JPS5236988A/en
Publication of JPS5236988A publication Critical patent/JPS5236988A/en
Publication of JPS5436078B2 publication Critical patent/JPS5436078B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To dope group II or/and group V element on the active layer of GaAsGaAlAs base DH laser and make its carrier concentration more than 1X 10<18> cm<-3> thereby enabling single vertical mode oscillation to be made.
JP11336575A 1975-09-18 1975-09-18 Semiconductor laser Granted JPS5236988A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11336575A JPS5236988A (en) 1975-09-18 1975-09-18 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11336575A JPS5236988A (en) 1975-09-18 1975-09-18 Semiconductor laser

Publications (2)

Publication Number Publication Date
JPS5236988A true JPS5236988A (en) 1977-03-22
JPS5436078B2 JPS5436078B2 (en) 1979-11-07

Family

ID=14610419

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11336575A Granted JPS5236988A (en) 1975-09-18 1975-09-18 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5236988A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58115877A (en) * 1981-12-28 1983-07-09 Sharp Corp Semiconductor laser element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58115877A (en) * 1981-12-28 1983-07-09 Sharp Corp Semiconductor laser element
JPS6124840B2 (en) * 1981-12-28 1986-06-12 Sharp Kk

Also Published As

Publication number Publication date
JPS5436078B2 (en) 1979-11-07

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