JPS5245888A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS5245888A
JPS5245888A JP50122274A JP12227475A JPS5245888A JP S5245888 A JPS5245888 A JP S5245888A JP 50122274 A JP50122274 A JP 50122274A JP 12227475 A JP12227475 A JP 12227475A JP S5245888 A JPS5245888 A JP S5245888A
Authority
JP
Japan
Prior art keywords
laser device
semiconductor laser
simiconductor
tupe
proton
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50122274A
Other languages
Japanese (ja)
Inventor
Takeo Kaneko
Toshiyuki Yamada
Kunizo Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP50122274A priority Critical patent/JPS5245888A/en
Publication of JPS5245888A publication Critical patent/JPS5245888A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To provide an active layer injected with Al or proton periodically in a facial direction in the middle of P-tupe and n-type semiconductor layer, thereby obtaining a simiconductor laser device that can perform oscillation of single mode easily at high accuracy.
JP50122274A 1975-10-09 1975-10-09 Semiconductor laser device Pending JPS5245888A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50122274A JPS5245888A (en) 1975-10-09 1975-10-09 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50122274A JPS5245888A (en) 1975-10-09 1975-10-09 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS5245888A true JPS5245888A (en) 1977-04-11

Family

ID=14831893

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50122274A Pending JPS5245888A (en) 1975-10-09 1975-10-09 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS5245888A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5420684A (en) * 1977-07-18 1979-02-16 Nippon Telegr & Teleph Corp <Ntt> Light emitting semiconductor device
US4385101A (en) * 1980-04-28 1983-05-24 Catanzarite Vincent Owen Electrochemical cell structure
JPS60253157A (en) * 1984-05-28 1985-12-13 Asahi Chem Ind Co Ltd Nonaqueous secondary battery
EP0177221A2 (en) * 1984-09-28 1986-04-09 Hitachi, Ltd. Semiconductor laser
US5443925A (en) * 1992-11-16 1995-08-22 Sanyo Electric Co., Ltd. Nonaqueous electrolyte battery

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5420684A (en) * 1977-07-18 1979-02-16 Nippon Telegr & Teleph Corp <Ntt> Light emitting semiconductor device
US4385101A (en) * 1980-04-28 1983-05-24 Catanzarite Vincent Owen Electrochemical cell structure
JPS60253157A (en) * 1984-05-28 1985-12-13 Asahi Chem Ind Co Ltd Nonaqueous secondary battery
JPH0452592B2 (en) * 1984-05-28 1992-08-24 Asahi Chemical Ind
EP0177221A2 (en) * 1984-09-28 1986-04-09 Hitachi, Ltd. Semiconductor laser
US5443925A (en) * 1992-11-16 1995-08-22 Sanyo Electric Co., Ltd. Nonaqueous electrolyte battery

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