JPS522180A - Method of fabricating mos semiconductor integrated circuit - Google Patents
Method of fabricating mos semiconductor integrated circuitInfo
- Publication number
- JPS522180A JPS522180A JP51072384A JP7238476A JPS522180A JP S522180 A JPS522180 A JP S522180A JP 51072384 A JP51072384 A JP 51072384A JP 7238476 A JP7238476 A JP 7238476A JP S522180 A JPS522180 A JP S522180A
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- semiconductor integrated
- mos semiconductor
- fabricating mos
- fabricating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP51072384A JPS522180A (en) | 1976-06-18 | 1976-06-18 | Method of fabricating mos semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP51072384A JPS522180A (en) | 1976-06-18 | 1976-06-18 | Method of fabricating mos semiconductor integrated circuit |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP47027785A Division JPS5143950B2 (ja) | 1972-03-10 | 1972-03-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS522180A true JPS522180A (en) | 1977-01-08 |
JPS5215953B2 JPS5215953B2 (ja) | 1977-05-06 |
Family
ID=13487724
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51072384A Granted JPS522180A (en) | 1976-06-18 | 1976-06-18 | Method of fabricating mos semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS522180A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5961171U (ja) * | 1982-10-18 | 1984-04-21 | 株式会社東芝 | エスカレ−タなどのタ−ニングハンドル装置 |
US4891747A (en) * | 1984-06-25 | 1990-01-02 | Texas Instruments Incorporated | Lightly-doped drain transistor structure in contactless DRAM cell with buried source/drain |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62128584U (ja) * | 1986-02-07 | 1987-08-14 |
-
1976
- 1976-06-18 JP JP51072384A patent/JPS522180A/ja active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5961171U (ja) * | 1982-10-18 | 1984-04-21 | 株式会社東芝 | エスカレ−タなどのタ−ニングハンドル装置 |
US4891747A (en) * | 1984-06-25 | 1990-01-02 | Texas Instruments Incorporated | Lightly-doped drain transistor structure in contactless DRAM cell with buried source/drain |
Also Published As
Publication number | Publication date |
---|---|
JPS5215953B2 (ja) | 1977-05-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS52140280A (en) | Semiconductor device | |
JPS5356972A (en) | Mesa type semiconductor device | |
JPS5324277A (en) | Semiconductor devic e and its production | |
JPS52106279A (en) | Manufacture of semiconductor ic | |
JPS522180A (en) | Method of fabricating mos semiconductor integrated circuit | |
JPS531471A (en) | Manufacture for semiconductor device | |
JPS5379378A (en) | Semoconductor davice and its production | |
JPS5261960A (en) | Production of semiconductor device | |
JPS5413279A (en) | Manufacture for semiconductor integrated circuit device | |
JPS5243385A (en) | Process for production of semiconductor integrated circuit | |
JPS54101290A (en) | Semiconductor integtated circuit unit and its manufacture | |
JPS51112266A (en) | Semiconductor device production method | |
JPS52153373A (en) | Preparation of semiconductor device | |
JPS5245290A (en) | Integrated circuit of semiconductor and method for its fabrication | |
JPS5339888A (en) | Semiconductor integrated circuit device and its production | |
JPS52179A (en) | Method of fabricating semiconductor | |
JPS5346287A (en) | Production of semiconductor integrated circuit | |
JPS5314584A (en) | Forming method for mosic and bipolar ic on one semiconductor substrate | |
JPS5310281A (en) | Production of mos type semiconductor integrated circuit | |
JPS5360181A (en) | Production of mos type field effect transistor | |
JPS5272186A (en) | Production of mis type semiconductor device | |
JPS547867A (en) | Manufacture for semiconductor device | |
JPS5398788A (en) | Manufacture for semiconductor integrated circuit | |
JPS5245292A (en) | Device for integrated circuit of semiconductor | |
JPS5319774A (en) | Semiconductor integrated circuit |