JPS522180A - Method of fabricating mos semiconductor integrated circuit - Google Patents

Method of fabricating mos semiconductor integrated circuit

Info

Publication number
JPS522180A
JPS522180A JP51072384A JP7238476A JPS522180A JP S522180 A JPS522180 A JP S522180A JP 51072384 A JP51072384 A JP 51072384A JP 7238476 A JP7238476 A JP 7238476A JP S522180 A JPS522180 A JP S522180A
Authority
JP
Japan
Prior art keywords
integrated circuit
semiconductor integrated
mos semiconductor
fabricating mos
fabricating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP51072384A
Other languages
Japanese (ja)
Other versions
JPS5215953B2 (en
Inventor
Shigeru Arita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP51072384A priority Critical patent/JPS522180A/en
Publication of JPS522180A publication Critical patent/JPS522180A/en
Publication of JPS5215953B2 publication Critical patent/JPS5215953B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To form diffusion layer in silicon substrate in advance to thereafter form capacitor independently by self-alignment type.
COPYRIGHT: (C)1977,JPO&Japio
JP51072384A 1976-06-18 1976-06-18 Method of fabricating mos semiconductor integrated circuit Granted JPS522180A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51072384A JPS522180A (en) 1976-06-18 1976-06-18 Method of fabricating mos semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51072384A JPS522180A (en) 1976-06-18 1976-06-18 Method of fabricating mos semiconductor integrated circuit

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP47027785A Division JPS5143950B2 (en) 1972-03-10 1972-03-17

Publications (2)

Publication Number Publication Date
JPS522180A true JPS522180A (en) 1977-01-08
JPS5215953B2 JPS5215953B2 (en) 1977-05-06

Family

ID=13487724

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51072384A Granted JPS522180A (en) 1976-06-18 1976-06-18 Method of fabricating mos semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS522180A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961171U (en) * 1982-10-18 1984-04-21 株式会社東芝 Turning handle devices such as escalators
US4891747A (en) * 1984-06-25 1990-01-02 Texas Instruments Incorporated Lightly-doped drain transistor structure in contactless DRAM cell with buried source/drain

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62128584U (en) * 1986-02-07 1987-08-14

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961171U (en) * 1982-10-18 1984-04-21 株式会社東芝 Turning handle devices such as escalators
US4891747A (en) * 1984-06-25 1990-01-02 Texas Instruments Incorporated Lightly-doped drain transistor structure in contactless DRAM cell with buried source/drain

Also Published As

Publication number Publication date
JPS5215953B2 (en) 1977-05-06

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