JPS5379378A - Semoconductor davice and its production - Google Patents
Semoconductor davice and its productionInfo
- Publication number
- JPS5379378A JPS5379378A JP15684376A JP15684376A JPS5379378A JP S5379378 A JPS5379378 A JP S5379378A JP 15684376 A JP15684376 A JP 15684376A JP 15684376 A JP15684376 A JP 15684376A JP S5379378 A JPS5379378 A JP S5379378A
- Authority
- JP
- Japan
- Prior art keywords
- semoconductor
- davice
- production
- diffused layers
- leakage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To prevent shorting and leakage between substrate and diffused layers at shallow junctions by forming direct contact of Al and Si diffused layers in a semiconductor device.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15684376A JPS5379378A (en) | 1976-12-23 | 1976-12-23 | Semoconductor davice and its production |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15684376A JPS5379378A (en) | 1976-12-23 | 1976-12-23 | Semoconductor davice and its production |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5379378A true JPS5379378A (en) | 1978-07-13 |
Family
ID=15636576
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15684376A Pending JPS5379378A (en) | 1976-12-23 | 1976-12-23 | Semoconductor davice and its production |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5379378A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56111217A (en) * | 1980-02-07 | 1981-09-02 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Preparation of semiconductor device |
JPS5994457A (en) * | 1982-11-19 | 1984-05-31 | Nec Kyushu Ltd | Semiconductor device |
JPS6074682A (en) * | 1983-09-30 | 1985-04-26 | Toshiba Corp | Manufacture of semiconductor device |
JPS60187060A (en) * | 1984-03-06 | 1985-09-24 | Seiko Epson Corp | Semiconductor device |
US4860084A (en) * | 1984-09-03 | 1989-08-22 | Kabushiki Kaisha Toshiba | Semiconductor device MOSFET with V-shaped drain contact |
-
1976
- 1976-12-23 JP JP15684376A patent/JPS5379378A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56111217A (en) * | 1980-02-07 | 1981-09-02 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Preparation of semiconductor device |
JPS5994457A (en) * | 1982-11-19 | 1984-05-31 | Nec Kyushu Ltd | Semiconductor device |
JPS6074682A (en) * | 1983-09-30 | 1985-04-26 | Toshiba Corp | Manufacture of semiconductor device |
JPH056345B2 (en) * | 1983-09-30 | 1993-01-26 | Tokyo Shibaura Electric Co | |
JPS60187060A (en) * | 1984-03-06 | 1985-09-24 | Seiko Epson Corp | Semiconductor device |
US4860084A (en) * | 1984-09-03 | 1989-08-22 | Kabushiki Kaisha Toshiba | Semiconductor device MOSFET with V-shaped drain contact |
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