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Fujitsu Ltd
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Fujitsu Ltd
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Application filed by Fujitsu LtdfiledCriticalFujitsu Ltd
Priority to JP6830076ApriorityCriticalpatent/JPS52150964A/en
Publication of JPS52150964ApublicationCriticalpatent/JPS52150964A/en
PURPOSE: To grow epitaxial layers of varying impurities continuously in multilayers by bisecting the gas flow in a reaction tube to a flow of a higher impurity concentration and a flow of a lower impurity concentration and properly opposing wafers to these gas flows.