JPS52124880A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS52124880A JPS52124880A JP4127976A JP4127976A JPS52124880A JP S52124880 A JPS52124880 A JP S52124880A JP 4127976 A JP4127976 A JP 4127976A JP 4127976 A JP4127976 A JP 4127976A JP S52124880 A JPS52124880 A JP S52124880A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- lateral
- transistors
- making
- compared
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Logic Circuits (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain I<2> Ls of a high switching speed by making injection transistors in lateral structure and making base regions in considerably narrower structure as compared to lateral transistors.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4127976A JPS52124880A (en) | 1976-04-14 | 1976-04-14 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4127976A JPS52124880A (en) | 1976-04-14 | 1976-04-14 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52124880A true JPS52124880A (en) | 1977-10-20 |
Family
ID=12603999
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4127976A Pending JPS52124880A (en) | 1976-04-14 | 1976-04-14 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52124880A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5591862A (en) * | 1978-12-30 | 1980-07-11 | Fujitsu Ltd | Semiconductor device |
JPS5850773A (en) * | 1981-09-19 | 1983-03-25 | Mitsubishi Electric Corp | Semiconductor ic device |
-
1976
- 1976-04-14 JP JP4127976A patent/JPS52124880A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5591862A (en) * | 1978-12-30 | 1980-07-11 | Fujitsu Ltd | Semiconductor device |
JPS6043024B2 (en) * | 1978-12-30 | 1985-09-26 | 富士通株式会社 | Manufacturing method of semiconductor device |
JPS5850773A (en) * | 1981-09-19 | 1983-03-25 | Mitsubishi Electric Corp | Semiconductor ic device |
JPH0153514B2 (en) * | 1981-09-19 | 1989-11-14 | Mitsubishi Electric Corp |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS539469A (en) | Semiconductor device having electrode of stepped structure and its production | |
JPS5325375A (en) | Semiconductor integrated circuit devi ce | |
JPS5360582A (en) | Semiconductor ingegrated circuit device | |
JPS52124880A (en) | Semiconductor device | |
JPS5321579A (en) | Darlington transistor | |
JPS5370679A (en) | Transistor | |
JPS5322383A (en) | Iil simiconductor device | |
JPS5361981A (en) | Semiconductor device | |
JPS52135687A (en) | Semiconductor device | |
JPS5229178A (en) | Vertical field effect semiconductive device | |
JPS545391A (en) | Manufacture of semiconductor device | |
JPS5354488A (en) | Semiconductor device | |
JPS52135278A (en) | Semiconductor device | |
JPS5354982A (en) | Semiconductor integrated circuit | |
JPS5354981A (en) | Semiconductor logic circuit device | |
JPS5283185A (en) | Semiconductor device | |
JPS51116685A (en) | Semiconductor device | |
JPS5386183A (en) | Iil type semiconductor device | |
JPS51139282A (en) | Semi-conductor device | |
JPS5336487A (en) | Semiconductor device | |
JPS52123179A (en) | Mos type semiconductor device and its production | |
JPS52116086A (en) | Semiconductor device | |
JPS51120677A (en) | Semiconductor device manufacturing method | |
JPS52130578A (en) | Semiconductor integrated circuit device | |
JPS5291387A (en) | Semiconductor device |