JPS52124880A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS52124880A
JPS52124880A JP4127976A JP4127976A JPS52124880A JP S52124880 A JPS52124880 A JP S52124880A JP 4127976 A JP4127976 A JP 4127976A JP 4127976 A JP4127976 A JP 4127976A JP S52124880 A JPS52124880 A JP S52124880A
Authority
JP
Japan
Prior art keywords
semiconductor device
lateral
transistors
making
compared
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4127976A
Other languages
Japanese (ja)
Inventor
Katsumi Ogiue
Kazumichi Mitsusada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP4127976A priority Critical patent/JPS52124880A/en
Publication of JPS52124880A publication Critical patent/JPS52124880A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Logic Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain I<2> Ls of a high switching speed by making injection transistors in lateral structure and making base regions in considerably narrower structure as compared to lateral transistors.
JP4127976A 1976-04-14 1976-04-14 Semiconductor device Pending JPS52124880A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4127976A JPS52124880A (en) 1976-04-14 1976-04-14 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4127976A JPS52124880A (en) 1976-04-14 1976-04-14 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS52124880A true JPS52124880A (en) 1977-10-20

Family

ID=12603999

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4127976A Pending JPS52124880A (en) 1976-04-14 1976-04-14 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS52124880A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5591862A (en) * 1978-12-30 1980-07-11 Fujitsu Ltd Semiconductor device
JPS5850773A (en) * 1981-09-19 1983-03-25 Mitsubishi Electric Corp Semiconductor ic device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5591862A (en) * 1978-12-30 1980-07-11 Fujitsu Ltd Semiconductor device
JPS6043024B2 (en) * 1978-12-30 1985-09-26 富士通株式会社 Manufacturing method of semiconductor device
JPS5850773A (en) * 1981-09-19 1983-03-25 Mitsubishi Electric Corp Semiconductor ic device
JPH0153514B2 (en) * 1981-09-19 1989-11-14 Mitsubishi Electric Corp

Similar Documents

Publication Publication Date Title
JPS539469A (en) Semiconductor device having electrode of stepped structure and its production
JPS5325375A (en) Semiconductor integrated circuit devi ce
JPS5360582A (en) Semiconductor ingegrated circuit device
JPS52124880A (en) Semiconductor device
JPS5321579A (en) Darlington transistor
JPS5370679A (en) Transistor
JPS5322383A (en) Iil simiconductor device
JPS5361981A (en) Semiconductor device
JPS52135687A (en) Semiconductor device
JPS5229178A (en) Vertical field effect semiconductive device
JPS545391A (en) Manufacture of semiconductor device
JPS5354488A (en) Semiconductor device
JPS52135278A (en) Semiconductor device
JPS5354982A (en) Semiconductor integrated circuit
JPS5354981A (en) Semiconductor logic circuit device
JPS5283185A (en) Semiconductor device
JPS51116685A (en) Semiconductor device
JPS5386183A (en) Iil type semiconductor device
JPS51139282A (en) Semi-conductor device
JPS5336487A (en) Semiconductor device
JPS52123179A (en) Mos type semiconductor device and its production
JPS52116086A (en) Semiconductor device
JPS51120677A (en) Semiconductor device manufacturing method
JPS52130578A (en) Semiconductor integrated circuit device
JPS5291387A (en) Semiconductor device