JPS51139282A - Semi-conductor device - Google Patents

Semi-conductor device

Info

Publication number
JPS51139282A
JPS51139282A JP6286575A JP6286575A JPS51139282A JP S51139282 A JPS51139282 A JP S51139282A JP 6286575 A JP6286575 A JP 6286575A JP 6286575 A JP6286575 A JP 6286575A JP S51139282 A JPS51139282 A JP S51139282A
Authority
JP
Japan
Prior art keywords
semi
conductor device
phenomenon
prevented
contained
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6286575A
Other languages
Japanese (ja)
Inventor
Yoshiyuki Nakagome
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6286575A priority Critical patent/JPS51139282A/en
Publication of JPS51139282A publication Critical patent/JPS51139282A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0214Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233Integrated injection logic structures [I2L]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To provide a semi-conductor device, with which the saturation characteristic of Tr contained in IC is improved and also in which the generation of the phenomenon of parasitic PNPN thyristor is prevented.
JP6286575A 1975-05-28 1975-05-28 Semi-conductor device Pending JPS51139282A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6286575A JPS51139282A (en) 1975-05-28 1975-05-28 Semi-conductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6286575A JPS51139282A (en) 1975-05-28 1975-05-28 Semi-conductor device

Publications (1)

Publication Number Publication Date
JPS51139282A true JPS51139282A (en) 1976-12-01

Family

ID=13212603

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6286575A Pending JPS51139282A (en) 1975-05-28 1975-05-28 Semi-conductor device

Country Status (1)

Country Link
JP (1) JPS51139282A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58223345A (en) * 1982-06-21 1983-12-24 Toshiba Corp Semiconductor device
JPH03288441A (en) * 1990-04-03 1991-12-18 Nec Kansai Ltd Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58223345A (en) * 1982-06-21 1983-12-24 Toshiba Corp Semiconductor device
JPH03288441A (en) * 1990-04-03 1991-12-18 Nec Kansai Ltd Semiconductor device

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