JPS52135278A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS52135278A JPS52135278A JP5174976A JP5174976A JPS52135278A JP S52135278 A JPS52135278 A JP S52135278A JP 5174976 A JP5174976 A JP 5174976A JP 5174976 A JP5174976 A JP 5174976A JP S52135278 A JPS52135278 A JP S52135278A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- doping
- reducing
- becomes
- signal input
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 238000009825 accumulation Methods 0.000 abstract 1
- 230000006798 recombination Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:An I<2>L of high operating speeds is obtained by doping Au which becomes recombination center to signal input end regions and reducing the accumulation time of the base charge of bipolar transistors.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5174976A JPS52135278A (en) | 1976-05-07 | 1976-05-07 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5174976A JPS52135278A (en) | 1976-05-07 | 1976-05-07 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52135278A true JPS52135278A (en) | 1977-11-12 |
Family
ID=12895567
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5174976A Pending JPS52135278A (en) | 1976-05-07 | 1976-05-07 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52135278A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55111159A (en) * | 1979-02-20 | 1980-08-27 | Fuji Electric Co Ltd | Semiconductor integrated circuit |
-
1976
- 1976-05-07 JP JP5174976A patent/JPS52135278A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55111159A (en) * | 1979-02-20 | 1980-08-27 | Fuji Electric Co Ltd | Semiconductor integrated circuit |
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