JPS52135278A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS52135278A
JPS52135278A JP5174976A JP5174976A JPS52135278A JP S52135278 A JPS52135278 A JP S52135278A JP 5174976 A JP5174976 A JP 5174976A JP 5174976 A JP5174976 A JP 5174976A JP S52135278 A JPS52135278 A JP S52135278A
Authority
JP
Japan
Prior art keywords
semiconductor device
doping
reducing
becomes
signal input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5174976A
Other languages
Japanese (ja)
Inventor
Tetsuya Iizuka
Fujio Masuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP5174976A priority Critical patent/JPS52135278A/en
Publication of JPS52135278A publication Critical patent/JPS52135278A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:An I<2>L of high operating speeds is obtained by doping Au which becomes recombination center to signal input end regions and reducing the accumulation time of the base charge of bipolar transistors.
JP5174976A 1976-05-07 1976-05-07 Semiconductor device Pending JPS52135278A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5174976A JPS52135278A (en) 1976-05-07 1976-05-07 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5174976A JPS52135278A (en) 1976-05-07 1976-05-07 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS52135278A true JPS52135278A (en) 1977-11-12

Family

ID=12895567

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5174976A Pending JPS52135278A (en) 1976-05-07 1976-05-07 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS52135278A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55111159A (en) * 1979-02-20 1980-08-27 Fuji Electric Co Ltd Semiconductor integrated circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55111159A (en) * 1979-02-20 1980-08-27 Fuji Electric Co Ltd Semiconductor integrated circuit

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