JPS5322383A - Iil simiconductor device - Google Patents

Iil simiconductor device

Info

Publication number
JPS5322383A
JPS5322383A JP9604276A JP9604276A JPS5322383A JP S5322383 A JPS5322383 A JP S5322383A JP 9604276 A JP9604276 A JP 9604276A JP 9604276 A JP9604276 A JP 9604276A JP S5322383 A JPS5322383 A JP S5322383A
Authority
JP
Japan
Prior art keywords
iil
making
delay time
epitaxial layer
impurity concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9604276A
Other languages
Japanese (ja)
Inventor
Mitsuo Usami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9604276A priority Critical patent/JPS5322383A/en
Publication of JPS5322383A publication Critical patent/JPS5322383A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To shorten the average gate delay time of an I<2>L and reduce power delay time product by making an epitaxial layer at a high impurity concentration as a whole and making only the base region of the lateral transistor which uses said epitaxial layer as its base at a low impurity concentration.
JP9604276A 1976-08-13 1976-08-13 Iil simiconductor device Pending JPS5322383A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9604276A JPS5322383A (en) 1976-08-13 1976-08-13 Iil simiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9604276A JPS5322383A (en) 1976-08-13 1976-08-13 Iil simiconductor device

Publications (1)

Publication Number Publication Date
JPS5322383A true JPS5322383A (en) 1978-03-01

Family

ID=14154423

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9604276A Pending JPS5322383A (en) 1976-08-13 1976-08-13 Iil simiconductor device

Country Status (1)

Country Link
JP (1) JPS5322383A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5339092A (en) * 1976-08-25 1978-04-10 Mitsubishi Electric Corp Semiconductor integrated circuit device
JPS5916368A (en) * 1982-07-19 1984-01-27 Matsushita Electronics Corp Bi-polar semiconductor device
JPS59146462U (en) * 1983-03-17 1984-09-29 日立建機株式会社 Self-propelled wall cutting device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5339092A (en) * 1976-08-25 1978-04-10 Mitsubishi Electric Corp Semiconductor integrated circuit device
JPS5916368A (en) * 1982-07-19 1984-01-27 Matsushita Electronics Corp Bi-polar semiconductor device
JPS59146462U (en) * 1983-03-17 1984-09-29 日立建機株式会社 Self-propelled wall cutting device

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