JPS5183478A - Enhansumentomoodo shotsutokiishohekiigeetohikagariumudenkaikokatoranjisutaa - Google Patents
Enhansumentomoodo shotsutokiishohekiigeetohikagariumudenkaikokatoranjisutaaInfo
- Publication number
- JPS5183478A JPS5183478A JP50144070A JP14407075A JPS5183478A JP S5183478 A JPS5183478 A JP S5183478A JP 50144070 A JP50144070 A JP 50144070A JP 14407075 A JP14407075 A JP 14407075A JP S5183478 A JPS5183478 A JP S5183478A
- Authority
- JP
- Japan
- Prior art keywords
- enhansumentomoodo
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/02—Contacts, special
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- High Energy & Nuclear Physics (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US530117A US3912546A (en) | 1974-12-06 | 1974-12-06 | Enhancement mode, Schottky-barrier gate gallium arsenide field effect transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5183478A true JPS5183478A (en) | 1976-07-22 |
JPS5243068B2 JPS5243068B2 (ja) | 1977-10-28 |
Family
ID=24112513
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50144070A Granted JPS5183478A (en) | 1974-12-06 | 1975-12-05 | Enhansumentomoodo shotsutokiishohekiigeetohikagariumudenkaikokatoranjisutaa |
Country Status (4)
Country | Link |
---|---|
US (1) | US3912546A (ja) |
JP (1) | JPS5183478A (ja) |
DE (1) | DE2553838B2 (ja) |
GB (1) | GB1504017A (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5772385A (en) * | 1980-10-24 | 1982-05-06 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of field-effect transistor |
JPS5892274A (ja) * | 1981-11-28 | 1983-06-01 | Mitsubishi Electric Corp | 電界効果トランジスタの製造方法 |
JPS5895871A (ja) * | 1981-11-30 | 1983-06-07 | Mitsubishi Electric Corp | 電界効果トランジスタの製造方法 |
JPS5955072A (ja) * | 1982-09-24 | 1984-03-29 | Fujitsu Ltd | 半導体装置の製造方法 |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2631873C2 (de) * | 1976-07-15 | 1986-07-31 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur Herstellung eines Halbleiterbauelements mit einem Schottky-Kontakt auf einem zu einem anderen Bereich justierten Gatebereich und mit kleinem Serienwiderstand |
US4111725A (en) * | 1977-05-06 | 1978-09-05 | Bell Telephone Laboratories, Incorporated | Selective lift-off technique for fabricating gaas fets |
US4160984A (en) * | 1977-11-14 | 1979-07-10 | Hughes Aircraft Company | Schottky-gate field-effect transistor and fabrication process therefor |
US4243895A (en) * | 1978-01-04 | 1981-01-06 | Nazarian Artashes R | Integrated injection circuit |
US4277882A (en) * | 1978-12-04 | 1981-07-14 | Fairchild Camera And Instrument Corporation | Method of producing a metal-semiconductor field-effect transistor |
US4263605A (en) * | 1979-01-04 | 1981-04-21 | The United States Of America As Represented By The Secretary Of The Navy | Ion-implanted, improved ohmic contacts for GaAs semiconductor devices |
US4204893A (en) * | 1979-02-16 | 1980-05-27 | Bell Telephone Laboratories, Incorporated | Process for depositing chrome doped epitaxial layers of gallium arsenide utilizing a preliminary formed chemical vapor-deposited chromium oxide dopant source |
US4244097A (en) * | 1979-03-15 | 1981-01-13 | Hughes Aircraft Company | Schottky-gate field-effect transistor and fabrication process therefor |
FR2461358A1 (fr) * | 1979-07-06 | 1981-01-30 | Thomson Csf | Procede de realisation d'un transistor a effet de champ a grille auto-alignee, et transistor obtenu par ce procede |
US4379005A (en) * | 1979-10-26 | 1983-04-05 | International Business Machines Corporation | Semiconductor device fabrication |
US4377899A (en) * | 1979-11-19 | 1983-03-29 | Sumitomo Electric Industries, Ltd. | Method of manufacturing Schottky field-effect transistors utilizing shadow masking |
US4474623A (en) * | 1982-04-26 | 1984-10-02 | Raytheon Company | Method of passivating a semiconductor body |
US4837175A (en) * | 1983-02-15 | 1989-06-06 | Eaton Corporation | Making a buried channel FET with lateral growth over amorphous region |
US4601096A (en) * | 1983-02-15 | 1986-07-22 | Eaton Corporation | Method for fabricating buried channel field effect transistor for microwave and millimeter frequencies utilizing molecular beam epitaxy |
US4833095A (en) * | 1985-02-19 | 1989-05-23 | Eaton Corporation | Method for buried channel field effect transistor for microwave and millimeter frequencies utilizing ion implantation |
US4935789A (en) * | 1985-02-19 | 1990-06-19 | Eaton Corporation | Buried channel FET with lateral growth over amorphous region |
US4724220A (en) * | 1985-02-19 | 1988-02-09 | Eaton Corporation | Method for fabricating buried channel field-effect transistor for microwave and millimeter frequencies |
DE3569859D1 (en) * | 1985-12-24 | 1989-06-01 | Fujitsu Ltd | Logic circuit |
JPH088357B2 (ja) * | 1986-12-01 | 1996-01-29 | 三菱電機株式会社 | 縦型mosトランジスタ |
JPS63205930A (ja) * | 1987-02-21 | 1988-08-25 | Ricoh Co Ltd | 半導体集積回路装置の製造方法 |
JPH01220822A (ja) * | 1988-02-29 | 1989-09-04 | Mitsubishi Electric Corp | 化合物半導体装置の製造方法 |
US6265756B1 (en) * | 1999-04-19 | 2001-07-24 | Triquint Semiconductor, Inc. | Electrostatic discharge protection device |
US6764551B2 (en) * | 2001-10-05 | 2004-07-20 | International Business Machines Corporation | Process for removing dopant ions from a substrate |
FR2834130B1 (fr) * | 2001-12-20 | 2005-02-18 | Thales Sa | Procede d'amelioration des caracteristiques optiques de composants optoelectroniques multicouches |
US7445690B2 (en) | 2002-10-07 | 2008-11-04 | Tokyo Electron Limited | Plasma processing apparatus |
US7442600B2 (en) | 2004-08-24 | 2008-10-28 | Micron Technology, Inc. | Methods of forming threshold voltage implant regions |
US8120072B2 (en) * | 2008-07-24 | 2012-02-21 | Micron Technology, Inc. | JFET devices with increased barrier height and methods of making same |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1244225A (en) * | 1968-12-31 | 1971-08-25 | Associated Semiconductor Mft | Improvements in and relating to methods of manufacturing semiconductor devices |
US3590471A (en) * | 1969-02-04 | 1971-07-06 | Bell Telephone Labor Inc | Fabrication of insulated gate field-effect transistors involving ion implantation |
BE759057A (ja) * | 1969-11-19 | 1971-05-17 | Philips Nv | |
US3649369A (en) * | 1970-03-09 | 1972-03-14 | Hughes Aircraft Co | Method for making n-type layers in gallium arsenide at room temperatures |
US3756862A (en) * | 1971-12-21 | 1973-09-04 | Ibm | Proton enhanced diffusion methods |
-
1974
- 1974-12-06 US US530117A patent/US3912546A/en not_active Expired - Lifetime
-
1975
- 1975-11-07 GB GB46188/75A patent/GB1504017A/en not_active Expired
- 1975-11-29 DE DE19752553838 patent/DE2553838B2/de not_active Ceased
- 1975-12-05 JP JP50144070A patent/JPS5183478A/ja active Granted
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5772385A (en) * | 1980-10-24 | 1982-05-06 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of field-effect transistor |
JPH0147023B2 (ja) * | 1980-10-24 | 1989-10-12 | Nippon Telegraph & Telephone | |
JPS5892274A (ja) * | 1981-11-28 | 1983-06-01 | Mitsubishi Electric Corp | 電界効果トランジスタの製造方法 |
JPS5895871A (ja) * | 1981-11-30 | 1983-06-07 | Mitsubishi Electric Corp | 電界効果トランジスタの製造方法 |
JPS5955072A (ja) * | 1982-09-24 | 1984-03-29 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS6364891B2 (ja) * | 1982-09-24 | 1988-12-14 |
Also Published As
Publication number | Publication date |
---|---|
US3912546A (en) | 1975-10-14 |
JPS5243068B2 (ja) | 1977-10-28 |
DE2553838B2 (de) | 1977-10-27 |
DE2553838A1 (de) | 1976-06-16 |
GB1504017A (en) | 1978-03-15 |
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