FR2834130B1 - Procede d'amelioration des caracteristiques optiques de composants optoelectroniques multicouches - Google Patents
Procede d'amelioration des caracteristiques optiques de composants optoelectroniques multicouchesInfo
- Publication number
- FR2834130B1 FR2834130B1 FR0116556A FR0116556A FR2834130B1 FR 2834130 B1 FR2834130 B1 FR 2834130B1 FR 0116556 A FR0116556 A FR 0116556A FR 0116556 A FR0116556 A FR 0116556A FR 2834130 B1 FR2834130 B1 FR 2834130B1
- Authority
- FR
- France
- Prior art keywords
- improving
- optical characteristics
- optoelectronic components
- multilayer
- multilayer optoelectronic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
- H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Semiconductor Lasers (AREA)
- Optical Integrated Circuits (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0116556A FR2834130B1 (fr) | 2001-12-20 | 2001-12-20 | Procede d'amelioration des caracteristiques optiques de composants optoelectroniques multicouches |
US10/499,197 US7981707B2 (en) | 2001-12-20 | 2002-12-17 | Method for enhancing optical characteristics of multilayer optoelectronic components |
PCT/FR2002/004396 WO2003055021A2 (fr) | 2001-12-20 | 2002-12-17 | Procede d'amelioration des caracteristiques optiques de composants optoelectroniques multicouches |
AU2002364846A AU2002364846A1 (en) | 2001-12-20 | 2002-12-17 | Method for enhancing optical characteristics of multilayer optoelectronic components |
EP02801141A EP1466393A2 (fr) | 2001-12-20 | 2002-12-17 | Procede d'amelioration des caracteristiques optiques de composants optoelectroniques multicouches |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0116556A FR2834130B1 (fr) | 2001-12-20 | 2001-12-20 | Procede d'amelioration des caracteristiques optiques de composants optoelectroniques multicouches |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2834130A1 FR2834130A1 (fr) | 2003-06-27 |
FR2834130B1 true FR2834130B1 (fr) | 2005-02-18 |
Family
ID=8870753
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0116556A Expired - Lifetime FR2834130B1 (fr) | 2001-12-20 | 2001-12-20 | Procede d'amelioration des caracteristiques optiques de composants optoelectroniques multicouches |
Country Status (5)
Country | Link |
---|---|
US (1) | US7981707B2 (fr) |
EP (1) | EP1466393A2 (fr) |
AU (1) | AU2002364846A1 (fr) |
FR (1) | FR2834130B1 (fr) |
WO (1) | WO2003055021A2 (fr) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2855653B1 (fr) * | 2003-05-27 | 2005-10-21 | Thales Sa | Structure amorphe de couplage optique pour detecteur d'ondes electromagnetiques et detecteur associe |
FR2863774B1 (fr) * | 2003-12-16 | 2006-03-03 | Thales Sa | Photodetecteur a concentration de champ proche |
DE602004016496D1 (de) * | 2004-08-31 | 2008-10-23 | St Microelectronics Srl | Verfahren zur Herstellung einer Wirtsstruktur für nanometergroße Elemente |
EP1630881B1 (fr) * | 2004-08-31 | 2011-11-16 | STMicroelectronics Srl | Structure pour recevoir des éléments nanométriques et sa méthode de fabrication |
EP1630882B1 (fr) * | 2004-08-31 | 2012-05-02 | STMicroelectronics S.r.l. | Structure nanométrique et sa méthode de fabrication |
FR2893184B1 (fr) | 2005-11-10 | 2007-12-28 | Thales Sa | Structure optique de localisation d'un champ electro-magnetique et dispositif detecteurs ou emetteurs comprenant une telle structure |
FR2933781A1 (fr) * | 2008-07-11 | 2010-01-15 | Thales Sa | Extracteur de photons a cristaux photoniques pour micro-sources optiques a fort rendement |
FR2933786B1 (fr) * | 2008-07-11 | 2010-08-20 | Thales Sa | Dispositif optique comportant un cristal photonique a base de gainp sans absorption a deux photons |
US8957779B2 (en) | 2009-06-23 | 2015-02-17 | L&P Property Management Company | Drowsy driver detection system |
US8643942B2 (en) * | 2010-10-29 | 2014-02-04 | Raytheon Company | Compensation of thermally induced refractive index distortions in an optical gain medium or other optical element |
WO2014018776A1 (fr) | 2012-07-26 | 2014-01-30 | Massachusetts Institute Of Technology | Circuits intégrés photoniques fondés sur des structures à cascade quantique |
CN105474481B (zh) * | 2013-09-16 | 2019-11-05 | 英特尔公司 | 包括光波导的混合式光学装置 |
US9564550B2 (en) * | 2013-10-28 | 2017-02-07 | Infineon Technologies Dresden Gmbh | Optoelectronic component, a method for manufacturing an optoelectronic component, and a method for processing a carrier |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3918996A (en) * | 1970-11-02 | 1975-11-11 | Texas Instruments Inc | Formation of integrated circuits using proton enhanced diffusion |
US3936322A (en) * | 1974-07-29 | 1976-02-03 | International Business Machines Corporation | Method of making a double heterojunction diode laser |
US3912546A (en) * | 1974-12-06 | 1975-10-14 | Hughes Aircraft Co | Enhancement mode, Schottky-barrier gate gallium arsenide field effect transistor |
US4116717A (en) * | 1976-12-08 | 1978-09-26 | The United States Of America As Represented By The Secretary Of The Air Force | Ion implanted eutectic gallium arsenide solar cell |
US4452646A (en) * | 1981-09-28 | 1984-06-05 | Mcdonnell Douglas Corporation | Method of making planar III-V compound device by ion implantation |
US4840816A (en) * | 1987-03-24 | 1989-06-20 | The United States Of America As Represented By The United States Department Of Energy | Method of fabricating optical waveguides by ion implantation doping |
US5337328A (en) * | 1992-05-08 | 1994-08-09 | Sdl, Inc. | Semiconductor laser with broad-area intra-cavity angled grating |
US5539766A (en) * | 1993-08-19 | 1996-07-23 | Matsushita Electric Industrial Co., Ltd. | Distributed feedback semiconductor laser |
US5457709A (en) * | 1994-04-04 | 1995-10-10 | At&T Ipm Corp. | Unipolar semiconductor laser |
US5600483A (en) * | 1994-05-10 | 1997-02-04 | Massachusetts Institute Of Technology | Three-dimensional periodic dielectric structures having photonic bandgaps |
US5717707A (en) * | 1995-01-03 | 1998-02-10 | Xerox Corporation | Index guided semiconductor laser diode with reduced shunt leakage currents |
US5502787A (en) * | 1995-05-22 | 1996-03-26 | At&T Corp. | Article comprising a semiconductor waveguide structure |
US5703989A (en) * | 1995-12-29 | 1997-12-30 | Lucent Technologies Inc. | Single-mode waveguide structure for optoelectronic integrated circuits and method of making same |
JP2874668B2 (ja) * | 1996-10-30 | 1999-03-24 | 日本電気株式会社 | 固体撮像装置の製造方法 |
US5936989A (en) * | 1997-04-29 | 1999-08-10 | Lucent Technologies, Inc. | Quantum cascade laser |
US5963571A (en) * | 1997-06-30 | 1999-10-05 | Nec Research Institute, Inc. | Quantum-dot cascade laser |
US6072812A (en) * | 1997-08-01 | 2000-06-06 | Lucent Technologies Inc. | Distributed feedback laser with loss coupling |
US6122299A (en) * | 1997-12-31 | 2000-09-19 | Sdl, Inc. | Angled distributed reflector optical device with enhanced light confinement |
US5963799A (en) * | 1998-03-23 | 1999-10-05 | Texas Instruments - Acer Incorporated | Blanket well counter doping process for high speed/low power MOSFETs |
FR2784514B1 (fr) * | 1998-10-13 | 2001-04-27 | Thomson Csf | Procede de controle d'un laser semiconducteur unipolaire |
US6597721B1 (en) * | 2000-09-21 | 2003-07-22 | Ut-Battelle, Llc | Micro-laser |
AU2003214020A1 (en) * | 2002-03-04 | 2003-09-16 | Forskningscenter Riso | High-power diode laser system |
US20060215720A1 (en) * | 2005-03-24 | 2006-09-28 | Corzine Scott W | Quantum cascade laser with grating formed by a periodic variation in doping |
-
2001
- 2001-12-20 FR FR0116556A patent/FR2834130B1/fr not_active Expired - Lifetime
-
2002
- 2002-12-17 US US10/499,197 patent/US7981707B2/en not_active Expired - Fee Related
- 2002-12-17 EP EP02801141A patent/EP1466393A2/fr not_active Withdrawn
- 2002-12-17 WO PCT/FR2002/004396 patent/WO2003055021A2/fr not_active Application Discontinuation
- 2002-12-17 AU AU2002364846A patent/AU2002364846A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20050249473A1 (en) | 2005-11-10 |
FR2834130A1 (fr) | 2003-06-27 |
WO2003055021A3 (fr) | 2004-02-12 |
US7981707B2 (en) | 2011-07-19 |
EP1466393A2 (fr) | 2004-10-13 |
WO2003055021A2 (fr) | 2003-07-03 |
AU2002364846A8 (en) | 2003-07-09 |
AU2002364846A1 (en) | 2003-07-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE60231848D1 (de) | Optische Kopplung zwischen optischen Schaltungssubstraten | |
FR2834130B1 (fr) | Procede d'amelioration des caracteristiques optiques de composants optoelectroniques multicouches | |
DE60233774D1 (de) | Lasermikroskop | |
DE60210018D1 (de) | Optisches Wellenleiter-Filter | |
BR0214697B1 (pt) | processo para produÇço de Ácidos (met)acrÍlicos. | |
ITMI20000546A0 (it) | Processo per la preparazione di 1-esene | |
FR2760850B1 (fr) | Procede de fabrication de circuits optiques integres permettant de minimiser les pertes optiques de couplage | |
DE60227258D1 (de) | Mehrfach verzweigter optischer wellenleiter | |
DE50208461D1 (de) | Autofokus-Mikroskopsystem | |
FI20022162A0 (fi) | Menetelmä optisten kuitujen valmistamiseksi | |
FR2818979B1 (fr) | Procede de preparation d'imidaclopride | |
TW582555U (en) | Optical sub-assembly | |
FR2853900B1 (fr) | Procede de fabrication de l'anhydride isobutyrique | |
FR2771049B1 (fr) | Procede de fabrication de plaques en acrylique qui contiennent de vraies fleurs | |
FR2814741B1 (fr) | Procede de stabilisation de monomeres acryliques | |
TW486066U (en) | Optical fiber fixture | |
ITMI20011143A0 (it) | Processo per la preparazionee di bisfenoli con zeoliti | |
DE50211328D1 (de) | Optisches mikroskop mit verstellbarem objektiv | |
FR2826364B1 (fr) | Procede d'hemihydrogenation de dinitriles en aminonitriles | |
DE50214699D1 (de) | Optisches kompensationselement | |
FR2829759B1 (fr) | Procede de preparation de polyhydroxystilbenes symetriques | |
FR2779534B1 (fr) | Procede de fabrication de composants optiques par replication | |
AU2002344296A1 (en) | Optical beam steering device | |
DE60223998D1 (de) | Optischer Wellenlängenfilter | |
ITMI20001317A0 (it) | Procedimento per la purificazione di diacereina. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 15 |
|
CL | Concession to grant licences |
Name of requester: MIRSENSE, FR Effective date: 20160610 |
|
PLFP | Fee payment |
Year of fee payment: 16 |
|
PLFP | Fee payment |
Year of fee payment: 17 |
|
PLFP | Fee payment |
Year of fee payment: 19 |
|
PLFP | Fee payment |
Year of fee payment: 20 |