JPS51124385A - Complementary type mis semiconductor integrated circuit - Google Patents

Complementary type mis semiconductor integrated circuit

Info

Publication number
JPS51124385A
JPS51124385A JP50048666A JP4866675A JPS51124385A JP S51124385 A JPS51124385 A JP S51124385A JP 50048666 A JP50048666 A JP 50048666A JP 4866675 A JP4866675 A JP 4866675A JP S51124385 A JPS51124385 A JP S51124385A
Authority
JP
Japan
Prior art keywords
integrated circuit
semiconductor integrated
type mis
complementary type
mis semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50048666A
Other languages
Japanese (ja)
Other versions
JPS6130431B2 (en
Inventor
Osamu Yamashiro
Isamu Kobayashi
Naoki Yashiki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50048666A priority Critical patent/JPS51124385A/en
Publication of JPS51124385A publication Critical patent/JPS51124385A/en
Publication of JPS6130431B2 publication Critical patent/JPS6130431B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a complementary type MIS integrated circuit, incorporating diodes which function as switching, which is suitable for booster circuit in IC for electron type wrist watches.
JP50048666A 1975-04-23 1975-04-23 Complementary type mis semiconductor integrated circuit Granted JPS51124385A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50048666A JPS51124385A (en) 1975-04-23 1975-04-23 Complementary type mis semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50048666A JPS51124385A (en) 1975-04-23 1975-04-23 Complementary type mis semiconductor integrated circuit

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP57067300A Division JPS5844763A (en) 1982-04-23 1982-04-23 Complementary mis semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS51124385A true JPS51124385A (en) 1976-10-29
JPS6130431B2 JPS6130431B2 (en) 1986-07-14

Family

ID=12809644

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50048666A Granted JPS51124385A (en) 1975-04-23 1975-04-23 Complementary type mis semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS51124385A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5844763A (en) * 1982-04-23 1983-03-15 Hitachi Ltd Complementary mis semiconductor integrated circuit device
JPS6132566A (en) * 1984-07-18 1986-02-15 インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション Overvoltage protecting structure of semiconductor device
JPH06216380A (en) * 1992-10-07 1994-08-05 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture thereof
JPH098147A (en) * 1995-06-15 1997-01-10 Nec Corp Protective circuit for semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0247336A3 (en) * 1986-05-01 1988-09-14 Sealed Power Corporation Electrohydraulic controlled spool valve

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5844763A (en) * 1982-04-23 1983-03-15 Hitachi Ltd Complementary mis semiconductor integrated circuit device
JPH0221660B2 (en) * 1982-04-23 1990-05-15 Hitachi Ltd
JPS6132566A (en) * 1984-07-18 1986-02-15 インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション Overvoltage protecting structure of semiconductor device
JPH0240221B2 (en) * 1984-07-18 1990-09-10 Intaanashonaru Bijinesu Mashiinzu Corp
JPH06216380A (en) * 1992-10-07 1994-08-05 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture thereof
JPH098147A (en) * 1995-06-15 1997-01-10 Nec Corp Protective circuit for semiconductor device

Also Published As

Publication number Publication date
JPS6130431B2 (en) 1986-07-14

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