JPS52142974A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS52142974A
JPS52142974A JP5911576A JP5911576A JPS52142974A JP S52142974 A JPS52142974 A JP S52142974A JP 5911576 A JP5911576 A JP 5911576A JP 5911576 A JP5911576 A JP 5911576A JP S52142974 A JPS52142974 A JP S52142974A
Authority
JP
Japan
Prior art keywords
semiconductor device
freedom
degree
design
increase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5911576A
Other languages
Japanese (ja)
Inventor
Satoshi Meguro
Koichi Nagasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5911576A priority Critical patent/JPS52142974A/en
Publication of JPS52142974A publication Critical patent/JPS52142974A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To increase the degree of freedom of design and obtain a semiconductor device suitable as a CMOS circuit used for electronic wristwatches by forming FETs of varying threshold voltages on the same substrate without increasing production processes.
JP5911576A 1976-05-24 1976-05-24 Semiconductor device Pending JPS52142974A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5911576A JPS52142974A (en) 1976-05-24 1976-05-24 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5911576A JPS52142974A (en) 1976-05-24 1976-05-24 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS52142974A true JPS52142974A (en) 1977-11-29

Family

ID=13103981

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5911576A Pending JPS52142974A (en) 1976-05-24 1976-05-24 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS52142974A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0286166A (en) * 1988-09-22 1990-03-27 Seiko Epson Corp Multi-threshold value gate array device
US6472924B1 (en) 1999-02-02 2002-10-29 Oki Electric Industry Co., Ltd. Integrated semiconductor circuit having analog and logic circuits

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0286166A (en) * 1988-09-22 1990-03-27 Seiko Epson Corp Multi-threshold value gate array device
US6472924B1 (en) 1999-02-02 2002-10-29 Oki Electric Industry Co., Ltd. Integrated semiconductor circuit having analog and logic circuits

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