JPS4830691A - - Google Patents

Info

Publication number: JPS4830691A
Authority: JP; Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP8287972A

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1971-08-23

Filing date

1972-08-21

Publication date

1973-04-23

1972-08-21 Application filed filed Critical

1973-04-23 Publication of JPS4830691A publication Critical patent/JPS4830691A/ja

Status Pending legal-status Critical Current

Links

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/10—Controlling or regulating
- C30B19/106—Controlling or regulating adding crystallising material or reactants forming it in situ to the liquid
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02625—Liquid deposition using melted materials
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Landscapes

Engineering & Computer Science (AREA)
Power Engineering (AREA)
Manufacturing & Machinery (AREA)
Microelectronics & Electronic Packaging (AREA)
Computer Hardware Design (AREA)
General Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Physics & Mathematics (AREA)
Chemical & Material Sciences (AREA)
Materials Engineering (AREA)
Crystallography & Structural Chemistry (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Crystals, And After-Treatments Of Crystals (AREA)

JP8287972A 1971-08-23 1972-08-21 Pending JPS4830691A (ja)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
FR7130542A FR2151171A5 (en)	1971-08-23	1971-08-23	Epitaxial gallium aluminium arsenide layer - from liquid phase soln of aluminium arsenide in gallium

Publications (1)

Publication Number	Publication Date
JPS4830691A true JPS4830691A (ja)	1973-04-23

Family

ID=9082124

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP8287972A Pending JPS4830691A (ja)	1971-08-23	1972-08-21

Country Status (6)

Country	Link
JP (1)	JPS4830691A (ja)
AU (1)	AU4566672A (ja)
DE (1)	DE2238664A1 (ja)
FR (1)	FR2151171A5 (ja)
IT (1)	IT964961B (ja)
NL (1)	NL7211381A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS513876A (ja) *	1974-07-01	1976-01-13	Sanyo Electric Co
JPS524782A (en) *	1975-06-30	1977-01-14	Matsushita Electric Ind Co Ltd	Liquid phase epitaxial growth method
JPS52135653A (en) *	1976-05-10	1977-11-12	Hitachi Ltd	Differential amplifier
JPS55175239U (ja) *	1979-06-04	1980-12-16
US6229257B1 (en)	1997-12-05	2001-05-08	Matsushita Electronics Corporation	Fluorescent lamp sealed with glass bead

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR2251369B1 (ja) *	1973-11-15	1978-02-10	Radiotechnique Compelec
FR2519032A1 (fr) *	1981-12-28	1983-07-01	Benchimol Jean Louis	Procede de depot par epitaxie en phase liquide d'un compose ternaire

1971
- 1971-08-23 FR FR7130542A patent/FR2151171A5/fr not_active Expired
1972
- 1972-08-05 DE DE19722238664 patent/DE2238664A1/de active Pending
- 1972-08-17 AU AU45666/72A patent/AU4566672A/en not_active Expired
- 1972-08-18 NL NL7211381A patent/NL7211381A/xx unknown
- 1972-08-19 IT IT6967872A patent/IT964961B/it active
- 1972-08-21 JP JP8287972A patent/JPS4830691A/ja active Pending

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS513876A (ja) *	1974-07-01	1976-01-13	Sanyo Electric Co
JPS5716487B2 (ja) *	1974-07-01	1982-04-05
JPS524782A (en) *	1975-06-30	1977-01-14	Matsushita Electric Ind Co Ltd	Liquid phase epitaxial growth method
JPS52135653A (en) *	1976-05-10	1977-11-12	Hitachi Ltd	Differential amplifier
JPS5611243B2 (ja) *	1976-05-10	1981-03-13
JPS55175239U (ja) *	1979-06-04	1980-12-16
US6229257B1 (en)	1997-12-05	2001-05-08	Matsushita Electronics Corporation	Fluorescent lamp sealed with glass bead

Also Published As

Publication number	Publication date
FR2151171A5 (en)	1973-04-13
DE2238664A1 (de)	1973-03-15
AU4566672A (en)	1974-02-21
IT964961B (it)	1974-01-31
NL7211381A (ja)	1973-02-27

Publication	Publication Date	Title
ATA136472A (ja)	1973-12-15
AR196074A1 (ja)	1973-11-30
AU2658571A (ja)	1972-09-21
AU2691671A (ja)	1972-09-28
AU2485671A (ja)	1972-08-03
AU3005371A (ja)	1972-12-21
AU2952271A (ja)	1972-12-07
AU2941471A (ja)	1972-11-30
AU2894671A (ja)	1972-11-23
AU2742671A (ja)	1972-10-12
AU2684071A (ja)	1972-09-28
AU2564071A (ja)	1972-08-24
AU2684171A (ja)	1971-07-15
AU2836771A (ja)	1972-11-09
AU3038671A (ja)	1973-01-04
AU2503871A (ja)	1972-08-10
AU3025871A (ja)	1973-01-04
AU2577671A (ja)	1972-08-24
AU2588771A (ja)	1972-08-31
AU2654071A (ja)	1972-09-21
AU2473671A (ja)	1972-08-03
AU2669471A (ja)	1972-09-21
AU2456871A (ja)	1972-08-17
AU2455871A (ja)	1972-07-27
AU2415871A (ja)	1972-07-13