FR2151171A5 - Epitaxial gallium aluminium arsenide layer - from liquid phase soln of aluminium arsenide in gallium - Google Patents
Epitaxial gallium aluminium arsenide layer - from liquid phase soln of aluminium arsenide in galliumInfo
- Publication number
- FR2151171A5 FR2151171A5 FR7130542A FR7130542A FR2151171A5 FR 2151171 A5 FR2151171 A5 FR 2151171A5 FR 7130542 A FR7130542 A FR 7130542A FR 7130542 A FR7130542 A FR 7130542A FR 2151171 A5 FR2151171 A5 FR 2151171A5
- Authority
- FR
- France
- Prior art keywords
- gallium
- aluminium arsenide
- liquid phase
- soln
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000007791 liquid phase Substances 0.000 title abstract 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 title 2
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 title 2
- 229910052733 gallium Inorganic materials 0.000 title 2
- 239000000758 substrate Substances 0.000 abstract 3
- 238000001816 cooling Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/10—Controlling or regulating
- C30B19/106—Controlling or regulating adding crystallising material or reactants forming it in situ to the liquid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02625—Liquid deposition using melted materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7130542A FR2151171A5 (en) | 1971-08-23 | 1971-08-23 | Epitaxial gallium aluminium arsenide layer - from liquid phase soln of aluminium arsenide in gallium |
| DE19722238664 DE2238664A1 (de) | 1971-08-23 | 1972-08-05 | Verfahren zum epitaktischen niederschlagen ternaerer iii-v-verbindungen aus der fluessigkeitsphase |
| AU45666/72A AU4566672A (en) | 1971-08-23 | 1972-08-17 | Method of epitaxially depositing ternary iii-v compounds from the liquid phase |
| NL7211381A NL7211381A (fr) | 1971-08-23 | 1972-08-18 | |
| IT6967872A IT964961B (it) | 1971-08-23 | 1972-08-19 | Procedimento per il deposito epitas siale di composti ternari del tipo iii v dalla fase liquida |
| JP8287972A JPS4830691A (fr) | 1971-08-23 | 1972-08-21 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7130542A FR2151171A5 (en) | 1971-08-23 | 1971-08-23 | Epitaxial gallium aluminium arsenide layer - from liquid phase soln of aluminium arsenide in gallium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR2151171A5 true FR2151171A5 (en) | 1973-04-13 |
Family
ID=9082124
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7130542A Expired FR2151171A5 (en) | 1971-08-23 | 1971-08-23 | Epitaxial gallium aluminium arsenide layer - from liquid phase soln of aluminium arsenide in gallium |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS4830691A (fr) |
| AU (1) | AU4566672A (fr) |
| DE (1) | DE2238664A1 (fr) |
| FR (1) | FR2151171A5 (fr) |
| IT (1) | IT964961B (fr) |
| NL (1) | NL7211381A (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2519032A1 (fr) * | 1981-12-28 | 1983-07-01 | Benchimol Jean Louis | Procede de depot par epitaxie en phase liquide d'un compose ternaire |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2251369B1 (fr) * | 1973-11-15 | 1978-02-10 | Radiotechnique Compelec | |
| JPS5716487B2 (fr) * | 1974-07-01 | 1982-04-05 | ||
| JPS524782A (en) * | 1975-06-30 | 1977-01-14 | Matsushita Electric Ind Co Ltd | Liquid phase epitaxial growth method |
| JPS52135653A (en) * | 1976-05-10 | 1977-11-12 | Hitachi Ltd | Differential amplifier |
| JPS55175239U (fr) * | 1979-06-04 | 1980-12-16 | ||
| JP3199110B2 (ja) | 1997-12-05 | 2001-08-13 | 松下電器産業株式会社 | 蛍光ランプ |
-
1971
- 1971-08-23 FR FR7130542A patent/FR2151171A5/fr not_active Expired
-
1972
- 1972-08-05 DE DE19722238664 patent/DE2238664A1/de active Pending
- 1972-08-17 AU AU45666/72A patent/AU4566672A/en not_active Expired
- 1972-08-18 NL NL7211381A patent/NL7211381A/xx unknown
- 1972-08-19 IT IT6967872A patent/IT964961B/it active
- 1972-08-21 JP JP8287972A patent/JPS4830691A/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2519032A1 (fr) * | 1981-12-28 | 1983-07-01 | Benchimol Jean Louis | Procede de depot par epitaxie en phase liquide d'un compose ternaire |
| EP0083540A1 (fr) * | 1981-12-28 | 1983-07-13 | Jean-Louis Benchimol | Procédé de depôt par épitaxie en phase liquide d'un composé ternaire |
| US4532001A (en) * | 1981-12-28 | 1985-07-30 | Benchimol Jean Louis | Process for the liquid phase epitaxial deposition of a monocrystalline ternary compound |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4830691A (fr) | 1973-04-23 |
| DE2238664A1 (de) | 1973-03-15 |
| AU4566672A (en) | 1974-02-21 |
| IT964961B (it) | 1974-01-31 |
| NL7211381A (fr) | 1973-02-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| TP | Transmission of property | ||
| ST | Notification of lapse |