FR2151171A5 - Epitaxial gallium aluminium arsenide layer - from liquid phase soln of aluminium arsenide in gallium - Google Patents

Epitaxial gallium aluminium arsenide layer - from liquid phase soln of aluminium arsenide in gallium

Info

Publication number
FR2151171A5
FR2151171A5 FR7130542A FR7130542A FR2151171A5 FR 2151171 A5 FR2151171 A5 FR 2151171A5 FR 7130542 A FR7130542 A FR 7130542A FR 7130542 A FR7130542 A FR 7130542A FR 2151171 A5 FR2151171 A5 FR 2151171A5
Authority
FR
France
Prior art keywords
gallium
aluminium arsenide
liquid phase
soln
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7130542A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7130542A priority Critical patent/FR2151171A5/en
Priority to DE19722238664 priority patent/DE2238664A1/en
Priority to AU45666/72A priority patent/AU4566672A/en
Priority to NL7211381A priority patent/NL7211381A/xx
Priority to IT6967872A priority patent/IT964961B/en
Priority to JP8287972A priority patent/JPS4830691A/ja
Application granted granted Critical
Publication of FR2151171A5 publication Critical patent/FR2151171A5/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • C30B19/106—Controlling or regulating adding crystallising material or reactants forming it in situ to the liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Ternary cpds. of elements from gps. III and V are deposited epitaxially by (a) forming a soln. in the liquid phase in an excess of one of the components contg. an amount of a binary III-V cpd. in the solid state with at least one component other than the solvent, (b) placing a substrate and the soln. in an epitaxial growth direction, (c) adjusting to a temp. lower than the m.p. of the substrate, (d) contacting the substrate with the soln. and (e) subjecting to programmed cooling. The process is used in the prodn. of electroluminescent diodes.
FR7130542A 1971-08-23 1971-08-23 Epitaxial gallium aluminium arsenide layer - from liquid phase soln of aluminium arsenide in gallium Expired FR2151171A5 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR7130542A FR2151171A5 (en) 1971-08-23 1971-08-23 Epitaxial gallium aluminium arsenide layer - from liquid phase soln of aluminium arsenide in gallium
DE19722238664 DE2238664A1 (en) 1971-08-23 1972-08-05 PROCEDURE FOR EPITACTIC PRECIPITATION OF TERNAER III-V COMPOUNDS FROM THE LIQUID PHASE
AU45666/72A AU4566672A (en) 1971-08-23 1972-08-17 Method of epitaxially depositing ternary iii-v compounds from the liquid phase
NL7211381A NL7211381A (en) 1971-08-23 1972-08-18
IT6967872A IT964961B (en) 1971-08-23 1972-08-19 PROCEDURE FOR THE SIALE EPITAS DEPOSIT OF TERNARY COMPOUNDS OF TYPE III V FROM THE LIQUID PHASE
JP8287972A JPS4830691A (en) 1971-08-23 1972-08-21

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7130542A FR2151171A5 (en) 1971-08-23 1971-08-23 Epitaxial gallium aluminium arsenide layer - from liquid phase soln of aluminium arsenide in gallium

Publications (1)

Publication Number Publication Date
FR2151171A5 true FR2151171A5 (en) 1973-04-13

Family

ID=9082124

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7130542A Expired FR2151171A5 (en) 1971-08-23 1971-08-23 Epitaxial gallium aluminium arsenide layer - from liquid phase soln of aluminium arsenide in gallium

Country Status (6)

Country Link
JP (1) JPS4830691A (en)
AU (1) AU4566672A (en)
DE (1) DE2238664A1 (en)
FR (1) FR2151171A5 (en)
IT (1) IT964961B (en)
NL (1) NL7211381A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2519032A1 (en) * 1981-12-28 1983-07-01 Benchimol Jean Louis LIQUID PHASE EPITAXY DEPOSITION METHOD OF TERNARY COMPOUND

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2251369B1 (en) * 1973-11-15 1978-02-10 Radiotechnique Compelec
JPS5716487B2 (en) * 1974-07-01 1982-04-05
JPS524782A (en) * 1975-06-30 1977-01-14 Matsushita Electric Ind Co Ltd Liquid phase epitaxial growth method
JPS52135653A (en) * 1976-05-10 1977-11-12 Hitachi Ltd Differential amplifier
JPS55175239U (en) * 1979-06-04 1980-12-16
JP3199110B2 (en) 1997-12-05 2001-08-13 松下電器産業株式会社 Fluorescent lamp

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2519032A1 (en) * 1981-12-28 1983-07-01 Benchimol Jean Louis LIQUID PHASE EPITAXY DEPOSITION METHOD OF TERNARY COMPOUND
EP0083540A1 (en) * 1981-12-28 1983-07-13 Jean-Louis Benchimol Process for the liquid epitaxial deposition of a ternary compound
US4532001A (en) * 1981-12-28 1985-07-30 Benchimol Jean Louis Process for the liquid phase epitaxial deposition of a monocrystalline ternary compound

Also Published As

Publication number Publication date
NL7211381A (en) 1973-02-27
DE2238664A1 (en) 1973-03-15
JPS4830691A (en) 1973-04-23
IT964961B (en) 1974-01-31
AU4566672A (en) 1974-02-21

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