JPS524782A - Liquid phase epitaxial growth method - Google Patents
Liquid phase epitaxial growth methodInfo
- Publication number
- JPS524782A JPS524782A JP8116475A JP8116475A JPS524782A JP S524782 A JPS524782 A JP S524782A JP 8116475 A JP8116475 A JP 8116475A JP 8116475 A JP8116475 A JP 8116475A JP S524782 A JPS524782 A JP S524782A
- Authority
- JP
- Japan
- Prior art keywords
- liquid phase
- epitaxial growth
- growth method
- phase epitaxial
- solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To supply most suitable Ga solution by adjusting with a dashboard and thus to obtain even purity additive amount with a small amount of solution.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8116475A JPS524782A (en) | 1975-06-30 | 1975-06-30 | Liquid phase epitaxial growth method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8116475A JPS524782A (en) | 1975-06-30 | 1975-06-30 | Liquid phase epitaxial growth method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS524782A true JPS524782A (en) | 1977-01-14 |
Family
ID=13738805
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8116475A Pending JPS524782A (en) | 1975-06-30 | 1975-06-30 | Liquid phase epitaxial growth method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS524782A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56164525A (en) * | 1980-04-23 | 1981-12-17 | Philips Nv | Board for liquid epitaxial growth unit and method of growing semiconductor material layer using same |
JPS5866326A (en) * | 1981-10-15 | 1983-04-20 | Toshiba Corp | Liquid phase epitaxial growth |
JPS61230319A (en) * | 1985-04-04 | 1986-10-14 | Mitsubishi Electric Corp | Apparatus for growing liquid phase crystal |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4830691A (en) * | 1971-08-23 | 1973-04-23 |
-
1975
- 1975-06-30 JP JP8116475A patent/JPS524782A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4830691A (en) * | 1971-08-23 | 1973-04-23 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56164525A (en) * | 1980-04-23 | 1981-12-17 | Philips Nv | Board for liquid epitaxial growth unit and method of growing semiconductor material layer using same |
JPS5866326A (en) * | 1981-10-15 | 1983-04-20 | Toshiba Corp | Liquid phase epitaxial growth |
JPS61230319A (en) * | 1985-04-04 | 1986-10-14 | Mitsubishi Electric Corp | Apparatus for growing liquid phase crystal |
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