JPH0766662B2 - 半導体記憶装置 - Google Patents
半導体記憶装置Info
- Publication number
- JPH0766662B2 JPH0766662B2 JP1340230A JP34023089A JPH0766662B2 JP H0766662 B2 JPH0766662 B2 JP H0766662B2 JP 1340230 A JP1340230 A JP 1340230A JP 34023089 A JP34023089 A JP 34023089A JP H0766662 B2 JPH0766662 B2 JP H0766662B2
- Authority
- JP
- Japan
- Prior art keywords
- line
- power supply
- word line
- voltage
- potential
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title description 4
- 239000003990 capacitor Substances 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
- Electronic Switches (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1340230A JPH0766662B2 (ja) | 1989-12-28 | 1989-12-28 | 半導体記憶装置 |
| KR1019900017890A KR940006363B1 (ko) | 1989-12-28 | 1990-11-06 | 반도체 집적 회로장치 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1340230A JPH0766662B2 (ja) | 1989-12-28 | 1989-12-28 | 半導体記憶装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03203093A JPH03203093A (ja) | 1991-09-04 |
| JPH0766662B2 true JPH0766662B2 (ja) | 1995-07-19 |
Family
ID=18334944
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1340230A Expired - Fee Related JPH0766662B2 (ja) | 1989-12-28 | 1989-12-28 | 半導体記憶装置 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH0766662B2 (ko) |
| KR (1) | KR940006363B1 (ko) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100376871B1 (ko) * | 2000-11-28 | 2003-03-19 | 주식회사 하이닉스반도체 | 파워 업 신호 발생기 |
| KR100396793B1 (ko) * | 2001-06-30 | 2003-09-02 | 주식회사 하이닉스반도체 | 파워 온 리셋회로 |
-
1989
- 1989-12-28 JP JP1340230A patent/JPH0766662B2/ja not_active Expired - Fee Related
-
1990
- 1990-11-06 KR KR1019900017890A patent/KR940006363B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03203093A (ja) | 1991-09-04 |
| KR910013276A (ko) | 1991-08-08 |
| KR940006363B1 (ko) | 1994-07-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080719 Year of fee payment: 13 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080719 Year of fee payment: 13 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090719 Year of fee payment: 14 |
|
| LAPS | Cancellation because of no payment of annual fees |