JPH0687430B2 - Thin film EL device - Google Patents
Thin film EL deviceInfo
- Publication number
- JPH0687430B2 JPH0687430B2 JP61209899A JP20989986A JPH0687430B2 JP H0687430 B2 JPH0687430 B2 JP H0687430B2 JP 61209899 A JP61209899 A JP 61209899A JP 20989986 A JP20989986 A JP 20989986A JP H0687430 B2 JPH0687430 B2 JP H0687430B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- back electrode
- electrode
- thin film
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 title claims description 25
- 239000010408 film Substances 0.000 claims description 43
- 238000007740 vapor deposition Methods 0.000 claims description 16
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 14
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 239000010931 gold Substances 0.000 claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 229910052763 palladium Inorganic materials 0.000 claims description 7
- 229910052697 platinum Inorganic materials 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 239000011159 matrix material Substances 0.000 claims description 3
- 238000001465 metallisation Methods 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 description 26
- 239000011521 glass Substances 0.000 description 4
- 239000011572 manganese Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000013543 active substance Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 229910052748 manganese Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000005083 Zinc sulfide Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 2
- 229910016655 EuF 3 Inorganic materials 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000002498 deadly effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- -1 manganese-activated zinc sulfide Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 この発明はキャラクタやグラフィックスなどの表示に用
いる薄膜EL素子に関するものであり、さらに詳しくは薄
膜EL素子の背面電極の構成に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film EL element used for displaying characters, graphics and the like, and more particularly to a structure of a back electrode of the thin film EL element.
従来の技術 従来より電場発光蛍光体を用いた固体映像表示装置とし
てＸ−Ｙマトリクス表示装置が知られている。この装置
は電場発光層の両面に水平平行電極群と垂直平行電極群
とを互いに直交するように配置し、それぞれの電極群に
接続された給電線により切換え装置を通して信号を加え
て両電極の交点部分の電場発光層（以下EL発光体層と略
称する）を発光させ（この交点の発光部分面を画素と称
する）、発光した画素の組み合わせによって文字記号、
図形等を表示させるものである。2. Description of the Related Art Conventionally, an XY matrix display device has been known as a solid-state image display device using an electroluminescent phosphor. This device has horizontal parallel electrode groups and vertical parallel electrode groups arranged on both sides of the electroluminescent layer so as to be orthogonal to each other, and a signal is applied through a switching device by a power supply line connected to each electrode group to intersect the two electrodes. A part of the electroluminescent layer (hereinafter, abbreviated as EL light emitting layer) is caused to emit light (a light emitting part surface at this intersection is referred to as a pixel), and a character symbol is generated depending on a combination of the emitted pixels.
A figure or the like is displayed.
ここで用いられる固体映像表示装置の表示板としては、
通常ガラス等の透光性基板上に透明な平行電極群を形成
し、その上に片側、あるいは両側に誘電体層あるいは抵
抗体層を介してEL発光体層を順次積層し、さらにその上
に背面平行電極群を下層の透明平行電極群に直交する配
置で積層して形成する。一般に透明平行電極としては平
滑なガラス基板上に酸化錫を被着するなどにより形成さ
れる。これに直交し、対向する背面電極としてはアルミ
ニウムが真空蒸着などにより形成される。As the display plate of the solid-state image display device used here,
A transparent parallel electrode group is usually formed on a transparent substrate such as glass, and an EL light emitting layer is sequentially laminated on one side or both sides of the transparent parallel electrode group via a dielectric layer or a resistor layer, and further thereon. The back parallel electrode group is formed by stacking the back parallel electrode groups in an arrangement orthogonal to the lower layer transparent parallel electrode group. Generally, a transparent parallel electrode is formed by depositing tin oxide on a smooth glass substrate. Aluminum is formed by vacuum vapor deposition or the like as a back electrode which is orthogonal to and opposite to this.
発明が解決しようとする問題点 ところで、前記誘電体層としては各種の誘電体膜が用い
られるが、EL発光体層の発光時には誘電体膜あるいは抵
抗体膜中の電界強度は105V/cm以上の高電場になること
が多い。誘電体膜あるいは抵抗体膜は蒸着、スパッタリ
ング、CVD等の方法で作製されるが、膜の中にはピンホ
ールやホコリ等の欠陥が発生する。これらの欠陥におい
ては、欠陥のない箇所よりも低い電界強度で膜は絶縁破
壊を起こしやすい。薄膜EL素子の構成膜における絶縁破
壊は大きくわけて２種類ある。一つは自己回復形絶縁破
壊と呼ばれるもので、第２図に示すように絶縁破壊した
箇所11の周囲の上部電極12が放電エネルギーにより数十
μｍの範囲で飛散し、上部電極12と下部電極13が電気的
に開放状態になるタイプである。ここで14は基板、15、
16は誘電体層あるいは抵抗体層、17はEL発光体層を示
す。もう一つは自己回復形絶縁破壊しないタイプで、第
３図に示すように上部電極12が十分に飛散しないで、絶
縁破壊した箇所18を通して上部電極12と下部電極13が電
気的に短絡状態になる。この状態でさらに電圧を印加し
ていけば絶縁破壊は誘電体膜あるいは抵抗体膜全体に広
がる事もあり、このタイプの絶縁破壊がおきれば、した
がって上下の電極の断線となり、この薄膜EL素子は使用
不能となり、致命的なものとなる。このタイプの絶縁破
壊は上部電極12の膜厚が薄いほどおこり難く、このため
薄膜EL素子においては、上部電極すなわち背面電極を、
抵抗が高くなりすぎて電極として好ましくならない程度
にできるだけ薄くしたり、あるいは誘電体層あるいは抵
抗体層自身の材料を自己回復形絶縁破壊するものにした
りしている。Problems to be Solved by the Invention By the way, various dielectric films are used as the dielectric layer, and the electric field strength in the dielectric film or the resistor film is 10 5 V / cm when the EL light emitting layer emits light. In many cases, the electric field is higher than the above. The dielectric film or the resistor film is produced by a method such as vapor deposition, sputtering and CVD, but defects such as pinholes and dust occur in the film. In these defects, the film is more likely to cause a dielectric breakdown with a lower electric field intensity than in a defect-free portion. There are roughly two types of dielectric breakdown in the constituent films of thin film EL devices. One is called self-recovery type dielectric breakdown. As shown in Fig. 2, the upper electrode 12 around the dielectric breakdown point 11 scatters within a range of several tens of μm due to the discharge energy, and the upper electrode 12 and the lower electrode. 13 is a type that opens electrically. Where 14 is the substrate, 15,
Reference numeral 16 is a dielectric layer or resistor layer, and 17 is an EL light emitting layer. The other is a self-healing type that does not cause dielectric breakdown. As shown in FIG. 3, the upper electrode 12 does not scatter sufficiently, and the upper electrode 12 and the lower electrode 13 are electrically short-circuited through the location 18 where the dielectric breakdown occurs. Become. If further voltage is applied in this state, the dielectric breakdown may spread to the entire dielectric film or resistor film. If this type of dielectric breakdown occurs, the upper and lower electrodes will be disconnected, and this thin film EL element Becomes unusable and deadly. This type of dielectric breakdown is less likely to occur as the film thickness of the upper electrode 12 is smaller. Therefore, in the thin film EL element, the upper electrode, that is, the back electrode is
It is made as thin as possible so that the resistance becomes too high to be unfavorable as an electrode, or the material of the dielectric layer or the resistor layer itself is made to be a self-healing type dielectric breakdown.
しかし、自己回復形絶縁破壊する薄膜EL素子においても
全く問題がないわけではない。すなわち薄膜EL素子の表
示面積を微細化高密度化しようとすればするほど背面電
極のピッチは小さくなり、背面電極の幅も狭くなってく
る。自己回復形絶縁破壊は、前述のように絶縁破壊した
箇所の周囲の背面電極が放電エネルギーにより数十μｍ
の範囲で飛散する。したがって背面電極の幅が100μｍ
程度になると、自己回復形絶縁破壊が発生した場合で、
背面電極の飛散が背面電極の幅より大きいときには背面
電極の断線が生じる。また、背面電極の飛散が背面電極
の幅より小さいときでも、背面電極上の近接した複数の
箇所で絶縁破壊が発生した場合には、背面電極の飛散部
が連なり合って、やはり断線につながる。断線にまでは
至らない場合でも、絶縁破壊による背面電極の飛散面積
が大きいと、画素の一部が非発光部となって薄膜EL素子
の表示素子としての品位を大きく阻害する。However, self-healing dielectric breakdown EL devices are not without problems. That is, as the display area of the thin film EL element is miniaturized and the density is increased, the pitch of the back electrodes becomes smaller and the width of the back electrodes becomes narrower. The self-healing type dielectric breakdown is that the back electrode around the dielectric breakdown part is several tens of μm due to the discharge energy as described above.
Scatter in the range of. Therefore, the width of the back electrode is 100 μm
In the case of self-recovery type dielectric breakdown,
When the scattering of the back electrode is larger than the width of the back electrode, the back electrode is broken. Further, even when the scattering of the back electrode is smaller than the width of the back electrode, when the dielectric breakdown occurs at a plurality of adjacent positions on the back electrode, the scattering portions of the back electrode are connected to each other, which also leads to disconnection. Even if the wire is not broken, if the scattering area of the back electrode due to the dielectric breakdown is large, a part of the pixel becomes a non-light emitting portion, and the quality of the thin film EL element as a display element is significantly impaired.
そこで、本発明は上述の技術的課題を解決し、従来の薄
膜EL素子に比べて絶縁破壊の起こりにくい、安定な薄膜
EL素子を提供することを目的とする。Therefore, the present invention solves the above-mentioned technical problems, and a stable thin film that is less likely to cause dielectric breakdown than a conventional thin film EL element.
The purpose is to provide an EL device.
問題点を解決するための手段 本発明は、透光性基板上に、互いに直交する方向にマト
リクス状に複数本配列されたストライプ状の透明電極と
背面電極との間に、少なくとも背面電極側に誘電体層あ
るいは抵抗体層を介してEL発光体層が設けられて成る薄
膜EL素子において、前記背面電極をが金、白金、パラジ
ウムのうちの一種からなる膜厚10nmから100nmの金属蒸
着膜とアルミニウム蒸着膜との積層膜にし、かつ前記金
属蒸着膜が前記誘電体層あるいは抵抗体層に接するよう
に設ける。Means for Solving the Problems The present invention is to provide at least a back electrode side between a back electrode and stripe-shaped transparent electrodes arranged in a matrix in a direction orthogonal to each other on a transparent substrate. In a thin film EL device comprising an EL light emitting layer provided via a dielectric layer or a resistor layer, the back electrode is a metal vapor deposition film having a thickness of 10 nm to 100 nm made of one of gold, platinum and palladium. It is provided as a laminated film with an aluminum vapor deposition film, and the metal vapor deposition film is provided in contact with the dielectric layer or the resistor layer.
作用 上記構成により、薄膜EL素子の背面電極として、誘電体
膜あるいは抵抗体膜の絶縁破壊電界強度が大きな金、白
金、パラジウムのうちの一種からなる金属蒸着膜とアル
ミニウム蒸着膜との積層膜を用いることによって、薄膜
EL素子の誘電体層あるいは抵抗体層の耐圧を高くし、素
子の絶縁破壊を起こり難くすることができる。With the above structure, as the back electrode of the thin film EL element, a laminated film of a metal vapor deposition film made of one of gold, platinum, and palladium having a high dielectric breakdown field strength of the dielectric film or the resistor film and an aluminum vapor deposition film is used. Thin film by using
It is possible to increase the withstand voltage of the dielectric layer or the resistor layer of the EL element and make it difficult for dielectric breakdown of the element to occur.
実施例 第１図は本発明の薄膜EL素子の一実施例を説明するため
の図である。図において、絶縁性基板１の上に透明電極
２が形成され、その上に第１誘電体層３、EL発光体層
４、第２誘電体層５が順次積層されて形成されている。
さらにその上には二種類の背面電極、すなわち第１の背
面電極６と第２の背面電極７とが積層されて形成された
背面電極A8と、第２の背面電極７のみからなる背面電極
B9とを設けたものである。ここで第１の背面電極６と第
２の背面電極７とは本発明の重要な役割を果たすもの
で、第１の背面電極６としては金、白金、パラジウムの
蒸着膜の内から選ぶ。第２の背面電極７としてはアルミ
ニウム蒸着膜を用いる。第１の背面電極６の膜厚として
は10nm以上100nm以下であることが望ましい。膜厚が10n
mより薄いと全面均一な膜になりにくく効果が小さく、
また100nmよりも厚くなると蒸着材料のコストが大とな
り不経済である。第２の背面電極７の膜厚は、10nm以上
500nm以下であることが望ましく、10nmより薄いと全面
均一な膜になりにくく、電気抵抗が大きい。また500nm
よりも厚くなると、素子が自己回復形絶縁破壊を起こし
にくくなる。Example FIG. 1 is a diagram for explaining an example of the thin film EL device of the present invention. In the figure, a transparent electrode 2 is formed on an insulating substrate 1, and a first dielectric layer 3, an EL light emitting layer 4, and a second dielectric layer 5 are sequentially laminated on the transparent electrode 2.
Further, two kinds of back electrodes, that is, a back electrode A8 formed by laminating a first back electrode 6 and a second back electrode 7, and a back electrode consisting of only the second back electrode 7 are provided.
B9 and is provided. Here, the first back electrode 6 and the second back electrode 7 play an important role of the present invention, and the first back electrode 6 is selected from vapor deposition films of gold, platinum and palladium. An aluminum vapor deposition film is used as the second back electrode 7. The thickness of the first back electrode 6 is preferably 10 nm or more and 100 nm or less. Film thickness 10n
If it is thinner than m, it is difficult to form a uniform film on the entire surface and the effect is small,
Further, if the thickness is more than 100 nm, the cost of the vapor deposition material becomes large and it is uneconomical. The thickness of the second back electrode 7 is 10 nm or more.
It is preferably 500 nm or less, and when it is thinner than 10 nm, it is difficult to form a uniform film on the entire surface, and the electric resistance is large. Again 500 nm
If the thickness is larger than that, the device is less likely to cause self-recovery type dielectric breakdown.
このようにして作製した薄膜EL素子の透明電極２と、背
面電極A8・背面電極B9との間に交流電圧を印加して素子
を駆動し、発光させて背面電極A8上と背面電極B9上とで
絶縁破壊の様子を比較すると、同駆動電圧下で発生する
絶縁破壊の個数は背面電極A8の構成のほうがはるかに少
なく安定であった。ここで例えば背面電極をすべて金、
白金、あるいはパラジウムの蒸着膜で形成することが考
えられるが、白金やパラジウムの抵抗率はアルミニウム
の４倍もあり、したがってその場合には電極の電気抵抗
を低くするため膜厚を厚くしなければならず、その結果
素子が自己回復形絶縁破壊をしなくなる。また、金の抵
抗率はアルミニウムより少し小さいだけであり、コスト
を考えると不利である。An AC voltage is applied between the transparent electrode 2 of the thin-film EL device thus manufactured and the back electrode A8 / back electrode B9 to drive the device so that the device emits light and the back electrode A8 and the back electrode B9 Comparing the state of dielectric breakdown, the number of dielectric breakdowns generated under the same driving voltage was much smaller and stable in the configuration of the back electrode A8. Here, for example, all the back electrodes are gold,
It may be possible to form a platinum or palladium vapor-deposited film, but the resistivity of platinum or palladium is four times that of aluminum, so in that case, in order to reduce the electrical resistance of the electrode, the film thickness must be increased. As a result, the device does not undergo self-healing dielectric breakdown. In addition, the resistivity of gold is slightly lower than that of aluminum, which is disadvantageous in terms of cost.
ここで絶縁性基板１にはガラス、アルミナまたはフォス
テライトなど通常の薄膜用基板を用いることができる。
透明電極２としては酸化すず（SnO2）や酸化インジウム
（In2O3）あるいは酸化すずインジウム（ITO）のような
透明導電性膜で形成する。Here, as the insulating substrate 1, a usual substrate for thin film such as glass, alumina or fosterite can be used.
The transparent electrode 2 is formed of a transparent conductive film such as tin oxide (SnO 2 ), indium oxide (In 2 O 3 ) or indium tin oxide (ITO).
第１誘電体層３、第２誘電体層５としては特に限定され
るものではないが、Be,Mg,Y,Ti,Zr,Sr,Hf,Nb,Ta,Cr,Mo,
W,Zn,Al,Ga,Siまたはランタナイド元素の酸化物および
窒化物、フッ化物などが適しており、これらの混合物ま
たは化合物でもよい。とくにペロブスカイト構造の酸化
物では高誘電率の誘電体層が得られる。The first dielectric layer 3 and the second dielectric layer 5 are not particularly limited, but Be, Mg, Y, Ti, Zr, Sr, Hf, Nb, Ta, Cr, Mo,
Oxides and nitrides of W, Zn, Al, Ga, Si or lanthanide elements, fluorides and the like are suitable, and a mixture or compound thereof may be used. In particular, a perovskite structure oxide can provide a dielectric layer having a high dielectric constant.
EL発光体層４はたとえば活性物質を含む硫化亜鉛（Zn
S）を用いることができる。活性物質としてはMn,Cu,Ag,
Au,TbF3，SmF3，ErF3，TmF3，DyF3，PrF3，EuF3などが
適当である。EL発光体層４は硫化亜鉛以外のものでもよ
く、たとえば活性物質を含むSrSやCaSなどの電場発光を
示すものであればよい。The EL light emitting layer 4 may be, for example, zinc sulfide (Zn) containing an active substance.
S) can be used. As the active substance, Mn, Cu, Ag,
Au, TbF 3 , SmF 3 , ErF 3 , TmF 3 , DyF 3 , PrF 3 and EuF 3 are suitable. The EL light emitting layer 4 may be made of a material other than zinc sulfide, and may be any material that exhibits electroluminescence such as SrS or CaS containing an active substance.
次に本発明の具体的な一例について、第４図を用いて説
明する。第４図に示したのは本発明にかかる薄膜EL素子
であって以下の手順で作製した。市販の透明なガラス板
31を基板とし、この上に電子ビーム蒸着法にて基板温度
300℃で膜厚200nmのITO膜を全面に形成し、写真食刻法
を用いてストライプ状の所望のパターンに形成し透明電
極32を得る。次に基板温度400℃で600nmの厚さにチタン
酸スチロンチウム（SrTiO3）膜をスパッタリング法にて
形成し、第１誘電体層33とした。次に基板温度を250℃
に保って、マンガン付活硫化亜鉛（ZnS:Mn）をマンガン
の濃度が１モル％になるようにして400nmの厚さに電子
ビーム蒸着してEL発光体層34を形成した。蒸着後、引き
続いて真空チャンバ内において550℃の温度で１時間熱
処理を施して、EL発光体層34の特性を向上させた。それ
から、この上に50nmさに酸化イットリウム（Y2O3）膜を
電子ビーム蒸着することにより、第２誘電体層35を形成
した。なお、このときの基板温度は200℃とした。さら
にその上に、金を50nm、アルミニウムを150nmの厚さに
電子ビーム蒸着法により順次積層して背面電極36を形成
し、素子を完成した。Next, a specific example of the present invention will be described with reference to FIG. FIG. 4 shows a thin film EL element according to the present invention, which was manufactured by the following procedure. Commercially available transparent glass plate
31 is used as the substrate, and the substrate temperature is then applied by electron beam evaporation.
An ITO film having a film thickness of 200 nm is formed on the entire surface at 300 ° C., and is formed into a desired stripe-shaped pattern by photolithography to obtain a transparent electrode 32. Next, a styrene-titanate (SrTiO 3 ) film having a thickness of 600 nm was formed at a substrate temperature of 400 ° C. by a sputtering method to form a first dielectric layer 33. Next, the substrate temperature is 250 ℃
Then, manganese-activated zinc sulfide (ZnS: Mn) was electron-beam evaporated to a thickness of 400 nm so that the concentration of manganese was 1 mol% to form an EL light emitting layer 34. After vapor deposition, heat treatment was subsequently performed in a vacuum chamber at a temperature of 550 ° C. for 1 hour to improve the characteristics of the EL phosphor layer 34. Then, a second dielectric layer 35 was formed by electron beam evaporation of a yttrium oxide (Y 2 O 3 ) film on this to a thickness of 50 nm. The substrate temperature at this time was 200 ° C. Further, gold was deposited thereon in a thickness of 50 nm and aluminum was deposited in a thickness of 150 nm in order by an electron beam evaporation method to form a back electrode 36, thereby completing the device.
透明電極32と背面電極36との間に交流パルス（周波数60
Hz,パルス幅30μｓ）電圧を印加して、この素子を駆動
し発光させた結果、背面電極がアルミニウム200nmで形
成されている以外はこの素子と全く同じ構成の素子が、
駆動電圧250Vで絶縁破壊による背面電極の断線が発生し
始めたのに対して、本発明にかかる素子は同じ駆動電圧
で背面電極の断線が全く発生しなかった。本実施例では
交流駆動タイプについて説明したが、誘電体層を抵抗体
層に置き換えた直流駆動タイプにおいても同様な結果が
得られた。AC pulse (frequency 60) between the transparent electrode 32 and the back electrode 36.
(Hz, pulse width 30 μs) A voltage was applied to drive this element to cause it to emit light. As a result, an element with exactly the same configuration as this element, except that the back electrode was formed of aluminum 200 nm,
At the driving voltage of 250 V, the back electrode was broken due to dielectric breakdown, whereas the device according to the present invention did not cause the back electrode to be broken at the same driving voltage. Although the AC drive type has been described in this embodiment, similar results were obtained also in the DC drive type in which the dielectric layer was replaced with a resistor layer.
発明の効果 以上のように本発明によれば、薄膜EL素子の背面電極を
金、白金、パラジウムのうちの一種から成る金属蒸着膜
とアルミニウム蒸着膜との積層膜で形成することによ
り、簡単な構成で、駆動電圧の上昇もなく絶縁破壊の少
ない安定な薄膜EL素子を提供することができ、効果が大
きい。As described above, according to the present invention, the back electrode of the thin film EL element is formed of a laminated film of a metal vapor deposition film made of one of gold, platinum, and palladium, and an aluminum vapor deposition film, thereby simplifying the operation. With the configuration, it is possible to provide a stable thin film EL element with little increase in driving voltage and less dielectric breakdown, and the effect is great.
第１図は本発明の一実施例を説明するための薄膜EL素子
の構成を示す断面図、第２図（ａ）および第３図（ａ）
は誘電体膜あるいは抵抗体膜の自己回復形絶縁破壊を説
明するための薄膜EL素子の平面図、第２図（ｂ），第３
図（ｂ）はそれぞれその断面図、第４図は本発明のさら
に具体的な一実施例を説明するための薄膜EL素子の構成
を示す断面図である。 １…絶縁性基板、２…透明電極、 ３…第１誘電体層、４…EL発光体層、 ５…第２誘電体層、６…第１の背面電極、 ７…第２の背面電極、８…背面電極Ｂ、 ９…背面電極Ａ。FIG. 1 is a cross-sectional view showing the structure of a thin film EL element for explaining an embodiment of the present invention, FIG. 2 (a) and FIG. 3 (a).
Is a plan view of a thin film EL element for explaining the self-healing dielectric breakdown of a dielectric film or a resistor film, FIG. 2 (b), and FIG.
FIG. 4B is a sectional view thereof, and FIG. 4 is a sectional view showing a structure of a thin film EL element for explaining a more specific embodiment of the present invention. DESCRIPTION OF SYMBOLS 1 ... Insulating substrate, 2 ... Transparent electrode, 3 ... 1st dielectric layer, 4 ... EL light emitting layer, 5 ... 2nd dielectric layer, 6 ... 1st back electrode, 7 ... 2nd back electrode, 8 ... Back electrode B, 9 ... Back electrode A.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 藤田 洋介 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 松岡 富造 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 阿部 惇 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (56)参考文献 特開 昭61−284093（ＪＰ，Ａ) 特開 昭62−143396（ＪＰ，Ａ) 特開 昭62−243290（ＪＰ，Ａ) 特開 昭57−43392（ＪＰ，Ａ) 特開 昭60−196980（ＪＰ，Ａ) 実開 昭61−100899（ＪＰ，Ｕ) ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Yosuke Fujita 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (72) Inventor, Tomizo Matsuoka, 1006 Kadoma, Kadoma City, Osaka 72) Inventor Atsushi Abe 1006, Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (56) Reference JP-A-61-284093 (JP, A) JP-A-62-143396 (JP, A) JP-A-SHO 62-243290 (JP, A) JP-A-57-43392 (JP, A) JP-A-60-196980 (JP, A) Actual development 61-100899 (JP, U)
Claims (2)
トリクス状に複数本配列されたストライプ状の透明電極
と背面電極との間に、少なくとも背面電極側に誘電体層
あるいは抵抗体層を介してEL発光体層が設けられて成る
薄膜EL素子において、前記背面電極が金、白金、パラジ
ウムのうちの一種からなる膜厚10nmから100nmの金属蒸
着膜とアルミニウム蒸着膜との積層膜からなり、かつ前
記金属蒸着膜が前記誘電体層あるいは抵抗体層に接する
ように設けられていることを特徴とする薄膜EL素子。1. A dielectric layer or a resistor layer at least on the back electrode side between a back electrode and a transparent electrode in a stripe shape arranged in a matrix in a direction orthogonal to each other on a transparent substrate. In a thin film EL element provided with an EL light emitting layer through, the back electrode is formed of a laminated film of a metal vapor deposition film and an aluminum vapor deposition film having a film thickness of 10 nm to 100 nm made of one kind of gold, platinum and palladium. And the metal deposition film is provided so as to be in contact with the dielectric layer or the resistor layer.
mであることを特徴とする特許請求の範囲第１項記載の
薄膜EL素子。2. The aluminum vapor deposition film has a thickness of 10 nm to 500 n.
The thin film EL element according to claim 1, wherein the thin film EL element is m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61209899A JPH0687430B2 (en) | 1986-09-05 | 1986-09-05 | Thin film EL device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61209899A JPH0687430B2 (en) | 1986-09-05 | 1986-09-05 | Thin film EL device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6366898A JPS6366898A (en) | 1988-03-25 |
| JPH0687430B2 true JPH0687430B2 (en) | 1994-11-02 |
Family
ID=16580487
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61209899A Expired - Lifetime JPH0687430B2 (en) | 1986-09-05 | 1986-09-05 | Thin film EL device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0687430B2 (en) |
-
1986
- 1986-09-05 JP JP61209899A patent/JPH0687430B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6366898A (en) | 1988-03-25 |
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