JPH05129475A - Sealing material for tab type semiconductor device, and tab type semiconductor device - Google Patents
Sealing material for tab type semiconductor device, and tab type semiconductor deviceInfo
- Publication number
- JPH05129475A JPH05129475A JP3317570A JP31757091A JPH05129475A JP H05129475 A JPH05129475 A JP H05129475A JP 3317570 A JP3317570 A JP 3317570A JP 31757091 A JP31757091 A JP 31757091A JP H05129475 A JPH05129475 A JP H05129475A
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- Prior art keywords
- epoxy resin
- semiconductor device
- type semiconductor
- parts
- pts
- Prior art date
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はタブ（ＴＡＢ）型半導体
装置に対し均一な薄膜を形成して封止することができる
封止材及び該封止材で封止されたＴＡＢ型半導体装置に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an encapsulating material capable of forming a uniform thin film on a tab (TAB) type semiconductor device and encapsulating the same, and a TAB type semiconductor device encapsulated with the encapsulating material. .
【０００２】[0002]
【従来の技術及び発明が解決しようとする課題】エポキ
シ樹脂及びこれに無機質充填剤等を配合したエポキシ樹
脂組成物は、一般に他の熱硬化性樹脂に比べて、成形
性、接着性、電気特性、耐湿性等に優れているため、各
種成形材料、粉体塗装用材料、電気絶縁材料等として広
く利用され、特に最近では半導体の封止材、ポッティン
グ材、コーティング材として注目されている。2. Description of the Related Art Epoxy resins and epoxy resin compositions containing an inorganic filler and the like are generally superior to other thermosetting resins in moldability, adhesiveness and electrical properties. Since it is excellent in moisture resistance and the like, it is widely used as various molding materials, powder coating materials, electrical insulating materials, and the like, and in recent years, it has attracted attention as a semiconductor sealing material, potting material, and coating material.
【０００３】しかしながら、従来のエポキシ樹脂組成物
は硬化時にクラックが入り易く、そのため成形、塗装面
の外観が損なわれたり、半導体等の素子や装置に欠陥を
生じさせることがある。特に近年、常温において液状を
呈する低粘度のエポキシ樹脂組成物が半導体装置の軽量
化、短小化を目的に封止材として多用されるようになっ
てきたが、液状エポキシ樹脂組成物は、液状とするため
に使用されるエポキシ樹脂、硬化剤等の種類が制限さ
れ、これら構成成分の選択の余地が小さいため、常温で
固体のエポキシ樹脂組成物よりも硬化時にクラックが更
に入り易いという問題がある。However, conventional epoxy resin compositions are prone to cracking during curing, which may impair the appearance of the molding or coated surface, or may cause defects in elements or devices such as semiconductors. Particularly in recent years, low-viscosity epoxy resin compositions that are liquid at room temperature have become widely used as encapsulants for the purpose of reducing the weight and shortening of semiconductor devices, but liquid epoxy resin compositions are There is a problem that the type of epoxy resin, curing agent, etc. used to do so is limited, and there is little room for selection of these constituent components, so cracks are more likely to occur during curing than an epoxy resin composition that is solid at room temperature. ..
【０００４】一方、半導体装置においても、メモリーの
大容量化、電子機器の小型化、軽量化の要求に伴い、多
ピン化、小型化、薄型化が進んでおり、これらの半導体
装置を封止するエポキシ樹脂組成物においてもこれまで
以上の信頼性が要求されている。とりわけ超多ピンパッ
ケージでは、ワイヤボンディング技術に代わってＴＡＢ
型半導体装置が導入されつつあり、現在、ＴＡＢ型半導
体装置は、時計、電卓、液晶ドライバ用ＩＣ等に実用化
が進み、ＩＣカードやメモり分野にまで実用化が進んで
おり、今後の展開が大いに期待されているものである。On the other hand, in semiconductor devices as well, the demand for larger memory capacity and smaller and lighter electronic devices has led to the increase in the number of pins, downsizing and thinning, and these semiconductor devices are sealed. Even in the epoxy resin composition, the higher reliability than ever is required. Especially for ultra-high pin count packages, TAB replaces wire bonding technology.
Type semiconductor devices are being introduced, and TAB type semiconductor devices are currently being put to practical use in timepieces, calculators, ICs for liquid crystal drivers, etc., and are being put to practical use even in the fields of IC cards and memory, and future developments. Is highly expected.
【０００５】しかしながら、ＴＡＢ型半導体装置を従来
の液状エポキシ樹脂組成物で封止した場合、シリコンチ
ップ上に封止材を薄くかつ均一に形成して封止すること
が困難であり、このため封止されたＴＡＢ型半導体装置
の信頼性に問題があった。However, when a TAB type semiconductor device is sealed with a conventional liquid epoxy resin composition, it is difficult to form a thin and uniform encapsulating material on a silicon chip for encapsulation. There was a problem in the reliability of the stopped TAB type semiconductor device.
【０００６】本発明は上記事情に鑑みなされたもので、
液状エポキシ樹脂組成物を用いて均一かつ薄く皮膜を形
成してＴＡＢ型半導体装置を封止し、信頼性に優れたＴ
ＡＢ型半導体装置を得ることができるＴＡＢ型半導体装
置用封止材及び該封止材で封止されたＴＡＢ型半導体装
置を提供することを目的とする。The present invention has been made in view of the above circumstances.
A liquid epoxy resin composition is used to form a uniform and thin film to seal a TAB type semiconductor device and to provide a highly reliable T
An object of the present invention is to provide a TAB-type semiconductor device encapsulant capable of obtaining an AB-type semiconductor device and a TAB-type semiconductor device encapsulated with the encapsulant.
【０００７】[0007]
【課題を解決するための手段及び作用】本発明者は、上
記目的を達成するため鋭意検討を重ねた結果、硬化性エ
ポキシ樹脂、硬化剤及び無機質充填剤を含有する液状エ
ポキシ樹脂組成物を用いてＴＡＢ型半導体装置を封止す
る場合において、下記式（１）で示されるジオルガノポ
リシロキサン単位を有する化合物を該単位の量がエポキ
シ樹脂と硬化材との合計量１００部（重量部、以下同
じ）に対し２部以上となるように配合すると共に、無機
質充填剤として球状形態のものを含む溶融シリカを用
い、該溶融シリカをエポキシ樹脂と硬化剤との合計量１
００部に対し２００部以上で、そのうち１００部以上が
溶融球状シリカであるように配合し、かつＢＨ型粘度計
を用いて２０ｒｐｍの回転数で測定した場合の２５℃に
おける粘度が２０００ポイズ以下の液状エポキシ樹脂組
成物を用いてＴＡＢ型半導体装置を封止した場合、かか
る液状エポキシ樹脂組成物は、低粘度であると共に、そ
の膜厚をシリコンチップ上に均一かつ薄く制御でき、し
かもその硬化物は機械的強度が良好で、低膨張係数、高
ガラス転移温度を有するものであるため、ＴＡＢ型半導
体装置のシリコンチップ上に０．８ｍｍ以下という薄膜
を形成して封止しても、優れた封止特性を発揮し、この
ため上記液状エポキシ樹脂組成物で薄く封止されたＴＡ
Ｂ型半導体装置は、非常に信頼性に優れたものであるこ
とを見い出し、本発明をなすに至ったものである。Means and Actions for Solving the Problems As a result of intensive studies to achieve the above object, the present inventor has used a liquid epoxy resin composition containing a curable epoxy resin, a curing agent and an inorganic filler. In the case of encapsulating a TAB type semiconductor device by using a compound having a diorganopolysiloxane unit represented by the following formula (1), the amount of the unit is 100 parts by weight of the epoxy resin and the curing material (parts by weight; Same as the above), and using fused silica containing a spherical form as the inorganic filler, the fused silica is added in an amount of 1 total of epoxy resin and curing agent.
200 parts or more with respect to 00 parts, of which 100 parts or more are blended so as to be fused spherical silica, and the viscosity at 25 ° C. when measured with a BH type viscometer at a rotation speed of 20 rpm is 2000 poises or less. When a TAB type semiconductor device is sealed with a liquid epoxy resin composition, such a liquid epoxy resin composition has a low viscosity, and its film thickness can be controlled uniformly and thinly on a silicon chip, and its cured product. Has good mechanical strength, a low expansion coefficient and a high glass transition temperature. Therefore, even if a thin film of 0.8 mm or less is formed and sealed on a silicon chip of a TAB type semiconductor device, TA that exhibits sealing characteristics and is therefore thinly sealed with the above liquid epoxy resin composition
The B-type semiconductor device was found to be extremely reliable, and the present invention was completed.
【０００８】[0008]
【化２】 （但し、式中Ｒ1，Ｒ2はそれぞれメチル基、エチル基、
フェニル基又は水素原子、ｎは１以上の整数である。）[Chemical 2] (However, in the formula, R 1 and R 2 are each a methyl group, an ethyl group,
Phenyl group or hydrogen atom, n is an integer of 1 or more. )
【０００９】従って、本発明は、（Ａ）硬化性エポキシ
樹脂、（Ｂ）硬化剤、（Ｃ）上記式（１）で示されるジ
オルガノポリシロキサン単位を含む化合物を該単位の量
を上記（Ａ），（Ｂ）成分の合計量１００重量部に対し
２重量部以上とする量、（Ｄ）溶融シリカを上記
（Ａ），（Ｂ）成分の合計量１００重量部に対し２００
重量部以上で、かつ、このうち溶融球状シリカを１００
重量部以上を含有し、ＢＨ型粘度計を用いて２０ｒｐｍ
の回転数で測定した場合の２５℃における粘度が２００
０ポイズ以下の液状エポキシ樹脂組成物からなるタブ型
半導体装置用封止材、及び上記封止材の硬化皮膜で０．
８ｍｍ以下の厚みにおいて封止されたタブ型半導体装置
を提供する。Therefore, in the present invention, (A) a curable epoxy resin, (B) a curing agent, and (C) a compound containing a diorganopolysiloxane unit represented by the above formula (1) is added in an amount of the above unit ( An amount of 2 parts by weight or more based on 100 parts by weight of the total amount of the components A) and (B), and (D) 200 per 100 parts by weight of the total amount of the components (A) and (B) above.
And more than 100 parts by weight of the fused spherical silica.
20 parts by weight using a BH-type viscometer
Viscosity at 25 ° C when measured at the number of revolutions of 200
The encapsulant for a tab-type semiconductor device, which is composed of a liquid epoxy resin composition of 0 poise or less, and a cured film of the encapsulant,
Provided is a tab-type semiconductor device sealed in a thickness of 8 mm or less.
【００１０】以下、本発明につき更に詳述すると、ま
ず、本発明の封止材を構成する硬化性エポキシ樹脂
（Ａ）は、１分子中に２個以上のエポキシ基を有するも
のが使用でき、後述するような各種硬化剤によって硬化
させることができることが可能である限り分子構造、分
子量等に特に制限はなく、従来から知られている種々の
ものを使用することができる。具体的には、例えばエピ
クロルヒドリンとビスフェノールをはじめとする各種ノ
ボラック樹脂から合成されるエポキシ樹脂、脂環式エポ
キシ樹脂あるいは塩素や臭素原子等のハロゲン原子を導
入したエポキシ樹脂等を挙げることができるが、常温で
液状を呈する低粘度の組成物を得るためには、これらの
中でもビスフェノールＡ又はビスフェノールＦのグリシ
ジルエーテル誘導体が好適に用いられる。なお、上記エ
ポキシ樹脂は、その使用に当っては必ずしも１種類の使
用に限定されるものではなく、２種類又はそれ以上を混
合して使用してもよい。The present invention will be described in more detail below. First, the curable epoxy resin (A) constituting the encapsulant of the present invention can be one having two or more epoxy groups in one molecule, There are no particular restrictions on the molecular structure, molecular weight, etc., as long as it can be cured with various curing agents as described below, and various conventionally known compounds can be used. Specifically, for example, an epoxy resin synthesized from various novolak resins including epichlorohydrin and bisphenol, an alicyclic epoxy resin or an epoxy resin into which a halogen atom such as chlorine or bromine atom is introduced can be mentioned. Among them, the glycidyl ether derivative of bisphenol A or bisphenol F is preferably used to obtain a low-viscosity composition that is liquid at room temperature. In addition, the above-mentioned epoxy resin is not necessarily limited to one type of use in use, and two or more types may be mixed and used.
【００１１】また、エポキシ樹脂としては、後述する硬
化剤との混合物の軟化点が３０℃以下で、かつ２５℃に
おける粘度が５００ポイズ以下となるようなものを使用
することが、低粘度のエポキシ樹脂組成物を得る点で好
ましい。As the epoxy resin, it is preferable to use an epoxy resin which has a softening point of 30 ° C. or lower and a viscosity at 25 ° C. of 500 poise or lower in a mixture with a curing agent described later. It is preferable in terms of obtaining a resin composition.
【００１２】なお、上記エポキシ樹脂の使用に際して、
モノエポキシ化合物を適宜併用することは差し支えな
い。このモノエポキシ化合物としてスチレンオキシド，
シクロヘキセンオキシド，プロピレンオキシド，メチル
グリシジルエーテル，エチルグリシジルエーテル，フェ
ニルグリシジルエーテル，アリルグリシジルエーテル，
オクチレンオキシド，ドデセンオキシド等が例示され
る。When using the above epoxy resin,
The monoepoxy compound may be appropriately used in combination. Styrene oxide as this monoepoxy compound,
Cyclohexene oxide, propylene oxide, methyl glycidyl ether, ethyl glycidyl ether, phenyl glycidyl ether, allyl glycidyl ether,
Examples include octylene oxide and dodecene oxide.
【００１３】また、硬化剤（Ｂ）としては、ジアミノジ
フェニルメタン，ジアミノフェニルスルホン，メタフェ
ニレンジアミン等に代表されるアミン系硬化剤、無水フ
タル酸，無水ピロメリット酸，無水ベンゾフェノンテト
ラカルボン酸等の酸無水物系硬化剤、あるいはフェノー
ルノボラック，クレゾールノボラック等の１分子中に２
個以上の水酸基を有するフェノールノボラック硬化剤が
例示される。これらの中では、低粘度で低応力のエポキ
シ樹脂組成物を得るため酸無水物系硬化剤が好ましい。As the curing agent (B), amine type curing agents represented by diaminodiphenylmethane, diaminophenyl sulfone, metaphenylenediamine, etc., acids such as phthalic anhydride, pyromellitic dianhydride, benzophenone tetracarboxylic anhydride, etc. Anhydrous curing agent or 2 in 1 molecule of phenol novolac, cresol novolac, etc.
Examples include phenol novolac curing agents having one or more hydroxyl groups. Among these, acid anhydride type curing agents are preferable in order to obtain an epoxy resin composition having low viscosity and low stress.
【００１４】これらの硬化剤の使用量は通常の使用量と
することができるが、エポキシ樹脂のエポキシ基の当量
に対して５０〜１５０当量％、特に８０〜１１０当量％
の範囲とすることが好ましい。The amount of these curing agents used may be a usual amount, but is 50 to 150 equivalent%, particularly 80 to 110 equivalent% relative to the equivalent of the epoxy groups of the epoxy resin.
It is preferable to set it as the range.
【００１５】更に、本発明の封止材においては、上記硬
化剤とエポキシ樹脂との反応を促進させる目的で、各種
硬化促進剤、例えばイミダゾールあるいはその誘導体、
三級アミン系誘導体、ホスフィン系誘導体、シクロアミ
ジン誘導体等を併用することは何ら差し支えない。な
お、これらの硬化促進剤の配合量も通常の範囲とするこ
とができる。Further, in the encapsulant of the present invention, various curing accelerators, such as imidazole or its derivatives, are used for the purpose of promoting the reaction between the curing agent and the epoxy resin.
There is no problem in using a tertiary amine derivative, a phosphine derivative, a cycloamidine derivative or the like in combination. In addition, the compounding amount of these curing accelerators can also be made into the usual range.
【００１６】本発明の封止材には、上記硬化性エポキシ
樹脂と硬化剤に加えて、下記一般式（１）で示されるジ
オルガノポリシロキサン単位を含む化合物（Ｃ）が配合
される。In the encapsulating material of the present invention, a compound (C) containing a diorganopolysiloxane unit represented by the following general formula (1) is blended in addition to the curable epoxy resin and the curing agent.
【００１７】[0017]
【化３】 [Chemical 3]
【００１８】ここで、式中Ｒ1，Ｒ2はそれぞれメチル
基、エチル基、フェニル基又は水素原子、ｎは１以上の
整数、好ましくは１０〜４００の整数である。In the formula, R 1 and R 2 are each a methyl group, an ethyl group, a phenyl group or a hydrogen atom, and n is an integer of 1 or more, preferably an integer of 10 to 400.
【００１９】かかる単位を有すればいかなる化合物も使
用可能であるが、具体的には下記式（２）〜（６）で示
される化合物、或いはこれらの（２）〜（６）で示され
る化合物中の珪素原子に結合した水素原子と下記式
（７）〜（９）で示されるアルケニル基含有エポキシ化
ノボラック樹脂のアルケニル基との付加反応により得ら
れる共重合体などが挙げられ、とりわけ（３）の化合物
と（８）の化合物より得られる共重合体が好ましく用い
られる。Although any compound can be used as long as it has such a unit, specifically, the compounds represented by the following formulas (2) to (6) or the compounds represented by these (2) to (6) And a copolymer obtained by an addition reaction of a hydrogen atom bonded to a silicon atom therein with an alkenyl group of an alkenyl group-containing epoxidized novolac resin represented by the following formulas (7) to (9), and particularly (3 A copolymer obtained from the compound (4) and the compound (8) is preferably used.
【００２０】[0020]
【化４】 [Chemical 4]
【００２１】[0021]
【化５】 （但し、上記式（７）〜（９）において、ｐ，ｑは通常
１≦ｐ≦１０，１≦ｑ≦３で示される正数を表す。）[Chemical 5] (However, in the above formulas (7) to (9), p and q are usually positive numbers represented by 1 ≦ p ≦ 10 and 1 ≦ q ≦ 3.)
【００２２】本発明においては、上記式（１）で示され
るジオルガノポリシロキサン単位を含む化合物を該単位
の量を上記（Ａ），（Ｂ）成分の合計量１００部に対し
２部以上とするように配合するもので、２部未満の配合
量では十分な可撓性を付与することができない。配合の
上限は特に制限されないが、１０部以下とすることがよ
く、１０部を超える配合量では組成物中に分散させるこ
とが困難で、封止材としての信頼性を低下させる場合が
ある。In the present invention, the amount of the compound containing the diorganopolysiloxane unit represented by the above formula (1) is 2 parts or more per 100 parts of the total amount of the above components (A) and (B). However, sufficient flexibility cannot be imparted with a compounding amount of less than 2 parts. The upper limit of the compounding amount is not particularly limited, but is preferably 10 parts or less, and if the compounding amount exceeds 10 parts, it may be difficult to disperse the compound in the composition, and the reliability as a sealing material may be reduced.
【００２３】また、本発明封止材においては、無機質充
填剤として、上記（Ａ），（Ｂ）成分の合計１００部に
対し溶融シリカを２００部以上使用すると共に、溶融シ
リカのうち溶融球状シリカを１００部以上使用するもの
である。溶融シリカ、特に溶融球状シリカを２００部以
上配合することにより無機質充填剤の高充填が可能とな
り、線膨張係数を小さくし、耐クラック性等の物性面で
も満足する結果が得られ、また低粘度化が実現されるも
のである。特に、より低粘度の組成物を得るため、全溶
融球状シリカのうち平均粒径１０μｍ以上のものを６０
〜９５重量％、平均粒径５μｍ以下のものを４０〜５重
量％使用することが好ましい。Further, in the encapsulant of the present invention, as the inorganic filler, 200 parts or more of fused silica is used for 100 parts in total of the above components (A) and (B), and fused spherical silica among the fused silica is used. 100 parts or more are used. By blending 200 parts or more of fused silica, especially fused spherical silica, it is possible to highly fill the inorganic filler, reduce the linear expansion coefficient, and obtain satisfactory results in terms of physical properties such as crack resistance and low viscosity. Is realized. In particular, in order to obtain a composition having a lower viscosity, 60% of all fused spherical silica having an average particle size of 10 μm or more is used.
.About.95% by weight, and an average particle size of 5 .mu.m or less is preferably used in an amount of 40 to 5% by weight.
【００２４】本発明の封止材には上記溶融シリカ以外の
無機質充填剤を用いることもでき、例えば結晶シリカ、
非結晶シリカ等の天然シリカ、合成高純度シリカ、合成
球状シリカ、タルク、マイカ、窒化珪素、ボロンナイト
ライド、アルミナ等から選ばれる１種を単独で又は２種
以上を併用することができる。Inorganic fillers other than the above fused silica may be used in the encapsulant of the present invention, for example, crystalline silica,
Natural silica such as amorphous silica, synthetic high-purity silica, synthetic spherical silica, talc, mica, silicon nitride, boron nitride, alumina and the like can be used alone or in combination of two or more.
【００２５】なお、無機質充填剤の配合量は（Ａ），
（Ｂ）成分の合計量１００部に対し、上述した通り２０
０部以上であるが、その上限は必ずしも制限されない。
しかし、上限は４００部とすることが好ましく、４００
部を超えると粘度が極端に高くなる場合がある。The blending amount of the inorganic filler is (A),
As described above, the total amount of the component (B) is 100 parts,
Although it is 0 or more, the upper limit is not necessarily limited.
However, the upper limit is preferably 400 parts,
If it exceeds the range, the viscosity may become extremely high.
【００２６】本発明の封止材には、更に必要に応じ、接
着向上用炭素官能性シラン、ワックス類、ステアリン酸
等の脂肪酸及びその金属塩等の離型剤、カーボンブラッ
クなどの顔料、染料、酸化防止剤、表面処理剤（γ−グ
リシドキシプロピルトリメトキシシランなど）、各種導
電性充填剤、チクソ性付与剤、その他の添加剤を配合す
ることができる。The encapsulant of the present invention may further include, if necessary, carbon-functional silane for improving adhesion, waxes, release agents such as fatty acids such as stearic acid and metal salts thereof, pigments such as carbon black and dyes. , An antioxidant, a surface treatment agent (γ-glycidoxypropyltrimethoxysilane, etc.), various conductive fillers, thixotropy imparting agents, and other additives can be added.
【００２７】本発明の封止材は、上述した成分の所定量
を均一に撹拌、混合することにより得ることができる
（なお、成分の配合順序に特に制限はない）。この場合
必要に応じてアセトン，トルエン，キシレン等の有機溶
剤で希釈して使用してもよいが、封止材の粘度は、ＢＨ
型粘度計を用いて２０ｒｐｍの回転数で測定した場合の
２５℃における粘度が２０００ポイズ以下、好ましくは
１５００ポイズ以下、より好ましくは１００〜１０００
ポイズとするもので、この低粘度を保つように上記必須
成分及び任意成分を選択する必要があり、２０００ポイ
ズを超える粘度とすると均一かつ薄い皮膜を形成するこ
とができない。The encapsulant of the present invention can be obtained by uniformly stirring and mixing the predetermined amounts of the above-mentioned components (the order of mixing the components is not particularly limited). In this case, if necessary, the solvent may be diluted with an organic solvent such as acetone, toluene, xylene, etc., but the viscosity of the sealing material is
Viscosity at 25 ° C. when measured at 20 rpm with a Brookfield viscometer is 2000 poises or less, preferably 1500 poises or less, more preferably 100-1000.
Since it is a poise, it is necessary to select the above essential components and optional components so as to maintain this low viscosity, and if the viscosity exceeds 2000 poise, a uniform and thin film cannot be formed.
【００２８】本発明の封止材を用いたＴＡＢ型半導体装
置の封止方法としては一般的なディッピングやディスペ
ンサーによる注型などの方法を採用することができ、特
に制限されるものではない。本発明の封止材によれば、
その膜厚を０．８ｍｍ以下に薄く均一に制御することが
できる。この場合、必要に応じて封止材や半導体装置を
予め３０〜８０℃に加熱することもできる。As a method for sealing a TAB type semiconductor device using the sealing material of the present invention, a general method such as dipping or casting with a dispenser can be adopted and is not particularly limited. According to the sealing material of the present invention,
The film thickness can be thinly and uniformly controlled to 0.8 mm or less. In this case, the encapsulant and the semiconductor device can be preheated to 30 to 80 ° C. if necessary.
【００２９】なお、本発明の封止材の硬化条件は、例え
ば硬化温度８０〜１８０℃で３０〜４８０分とすること
ができる。なお、硬化させる際、表面や内部の気泡発生
を抑制するため、１段階の加熱だけでなく、２段階以上
に加熱温度を変えて硬化を行なういわゆるステップキュ
アーを採用し得る。The encapsulant of the present invention can be cured under the curing temperature of 80 to 180 ° C. for 30 to 480 minutes. In addition, in order to suppress the generation of bubbles on the surface or inside when curing, so-called step cure may be employed in which the heating temperature is changed in two or more stages to perform curing, instead of heating in one stage.
【００３０】[0030]
【実施例】以下、実施例と比較例を示し、本発明を具体
的に示すが、本発明は下記の実施例に制限されるもので
はない。EXAMPLES Hereinafter, the present invention will be specifically shown by showing Examples and Comparative Examples, but the present invention is not limited to the following Examples.
【００３１】なお、実施例、比較例に先立ち、各例で使
用した式（１）で示されるジオルガノポリシロキサン単
位を有する化合物の製造方法を参考例により示す。Prior to the Examples and Comparative Examples, a method for producing a compound having a diorganopolysiloxane unit represented by the formula (1) used in each Example will be shown by a reference example.
【００３２】［参考例］リフラックスコンデンサー、温
度計、撹拌機及び滴下ロートを具備した内容積１リット
ルの四つ口フラスコへ軟化点８０℃のエポキシ化フェノ
ールノボラック樹脂（エポキシ当量１９５）３００ｇを
入れ、温度１１０℃で撹拌しながら２−アリルフェノー
ル３２ｇとトリブチルアミン１ｇとの混合物を滴下時間
１０分にて滴下し、更に温度１１０℃にて２時間撹拌を
続けた。得られた内容物から未反応の２−アリルフェノ
ール及びトリブチルアミンを減圧下で留去し、アリル基
含有のエポキシ樹脂（アリル当量１４９０、エポキシ当
量２３５）を得た。[Reference Example] 300 g of epoxidized phenol novolac resin (epoxy equivalent 195) having a softening point of 80 ° C. was placed in a four-necked flask having an internal volume of 1 liter equipped with a reflux condenser, a thermometer, a stirrer and a dropping funnel. While stirring at 110 ° C., a mixture of 32 g of 2-allylphenol and 1 g of tributylamine was added dropwise at a dropping time of 10 minutes, and stirring was continued at 110 ° C. for 2 hours. Unreacted 2-allylphenol and tributylamine were distilled off from the obtained content under reduced pressure to obtain an allyl group-containing epoxy resin (allyl equivalent 1490, epoxy equivalent 235).
【００３３】次に、上記と同様の四つ口フラスコに、上
記方法で得たアリル基含有のエポキシ樹脂１００ｇ、メ
チルイソブチルケトン１００ｇ、トルエン２００ｇ、２
％の白金濃度の２−エチルヘキサノール変性塩化白金酸
溶液０．４ｇをそれぞれ入れ、１時間の共沸脱水を行な
い。還流温度にて下記式（Ｉ）で示されるオルガノポリ
シロキサン８１ｇを滴下時間３０分にて滴下し、更に同
一温度で４時間撹拌して反応させた後、得られた内容物
を水洗し、溶剤を減圧下で留去することにより、ジオル
ガノポリシロキサン単位を４４重量％含む化合物Ｉを得
た。Then, in a four-necked flask similar to the above, 100 g of the allyl group-containing epoxy resin obtained by the above method, 100 g of methyl isobutyl ketone, 200 g of toluene, 2
0.4 g of a 2-ethylhexanol-modified chloroplatinic acid solution having a platinum concentration of 0.4% was put into each and azeotropic dehydration was carried out for 1 hour. 81 g of an organopolysiloxane represented by the following formula (I) was added dropwise at a reflux temperature at a dropping time of 30 minutes, and the mixture was stirred at the same temperature for 4 hours to cause a reaction, and then the obtained contents were washed with water and used as a solvent. Was distilled off under reduced pressure to obtain a compound I containing 44% by weight of diorganopolysiloxane unit.
【００３４】[0034]
【化６】 [Chemical 6]
【００３５】［実施例１〜３、比較例１〜３］エポキシ
樹脂（エポキシ当量１８４のエポキシ化ビスフェノール
Ａ）、酸無水物（４−メチルヘキサヒドロ無水フタル
酸）、上記参考例で得られたジオルガノポリシロキサン
単位を含有する化合物Ｉ及び下記式で示される化合物Ｉ
Ｉ、平均粒径が１５μｍの溶融球状シリカ、平均粒径が
１μｍの溶融球状シリカ、平均粒径が１２μｍの破砕シ
リカを表１に示すような配合量で使用すると共に、更に
イミダゾール系硬化促進剤ＨＸ３７４１（旭化成社製、
商品名）３重量部、γ−グリシドキシプロピルトリメト
キシシラン１重量部を添加し、均一に混合して６種類の
液状封止材を調製した。[Examples 1 to 3 and Comparative Examples 1 to 3] Epoxy resin (epoxidized bisphenol A having an epoxy equivalent of 184), acid anhydride (4-methylhexahydrophthalic anhydride), obtained in the above reference example. Compound I containing a diorganopolysiloxane unit and compound I represented by the following formula
I, fused spherical silica having an average particle size of 15 μm, fused spherical silica having an average particle size of 1 μm, and crushed silica having an average particle size of 12 μm were used in an amount as shown in Table 1, and further an imidazole curing accelerator was used. HX3741 (Asahi Kasei,
3 parts by weight of trade name) and 1 part by weight of γ-glycidoxypropyltrimethoxysilane were added and uniformly mixed to prepare 6 kinds of liquid encapsulating materials.
【００３６】[0036]
【化７】 [Chemical 7]
【００３７】これらの液状封止材を用いて下記に示す
（イ）〜（ハ）の試験を行なうと共に、ＴＡＢ型半導体
装置を封止し、封止した半導体装置のヒートサイクル試
験を下記（ニ）のように行ない、また、ＴＡＢ型半導体
装置のシリコンチップ上の封止材の最大厚みを測定し、
更にその封止状態を観測した。なお、ＴＡＢ型半導体装
置の封止は、８．０×８．０ｍｍのシリコンチップを使
用し、塗布圧１．５ｋｇ／ｃｍ2、塗布時間７．５秒、
塗布面積９．５×９．５ｍｍでＸＹ塗布機（岩下エンジ
ニアリング社製、オートマチックシステムディスペンサ
ーＡｕｔｏ Ｓｈｏｔｔｅｒ−４）で塗布した。なお、
硬化は１２０℃で１時間行った後、更に１５０℃で２時
間行なった。試験結果を表１に併記する。Using these liquid encapsulants, the following tests (a) to (c) were conducted, and the TAB type semiconductor device was encapsulated, and the heat cycle test of the encapsulated semiconductor device was conducted as follows. ), And measure the maximum thickness of the encapsulant on the silicon chip of the TAB semiconductor device,
Furthermore, the sealed state was observed. The TAB type semiconductor device was sealed using a silicon chip of 8.0 × 8.0 mm, a coating pressure of 1.5 kg / cm 2 , a coating time of 7.5 seconds,
Coating was performed with an XY coating machine (Iwashita Engineering Co., Ltd., automatic system dispenser Auto Shotter-4) with a coating area of 9.5 x 9.5 mm. In addition,
Curing was carried out at 120 ° C. for 1 hour and then at 150 ° C. for 2 hours. The test results are also shown in Table 1.
【００３８】（イ）粘 度 ＢＨ型回転粘度計を用いて２０ｒｐｍの回転数で２５℃
における粘度を測定した。 （ロ）機械的強度（曲げ強度及び曲げ弾性率） ＪＩＳ−Ｋ−６９１１に準じて１２０℃で１時間、更に
１５０℃で４時間加熱して硬化させ、１０×４×１００
ｍｍの抗折棒を形成し、その曲げ強度及び曲げ弾性率を
測定した。 （ハ）ガラス転移温度、膨張係数 ５×５×１５ｍｍの試験片を用いて、ディラトメーター
により毎分５℃の速さで昇温した時の値を測定した。 （ニ）ヒートサイクル 上記実施例、比較例で得られた液状封止材を用いて上述
したように封止したＴＡＢ型半導体装置につき、−５０
℃及び１５０℃，各３０分の冷熱サイクルを２００回繰
り返した後の断線状態を調べ、サンプル２０個中の不良
数を調べた。[0038] (i) using a viscosity BH type rotational viscometer 25 ° C. at a rotational speed of 20rpm
The viscosity at was measured. (B) Mechanical strength (flexural strength and flexural modulus) In accordance with JIS-K-6911, heated at 120 ° C. for 1 hour and further heated at 150 ° C. for 4 hours to be cured, and then 10 × 4 × 100.
A bending rod of mm was formed, and its bending strength and bending elastic modulus were measured. (C) Using a test piece having a glass transition temperature and an expansion coefficient of 5 × 5 × 15 mm, the value when the temperature was raised at a rate of 5 ° C. per minute was measured by a dilatometer . (D) Heat cycle -50 for the TAB type semiconductor device sealed as described above using the liquid sealing material obtained in the above-mentioned Examples and Comparative Examples.
After repeating the thermal cycle of 30 minutes at 30 ° C. and 150 ° C. 200 times, the state of disconnection was examined, and the number of defects in 20 samples was examined.
【００３９】[0039]
【表１】 [Table 1]
【００４０】＊無機質充填剤を除く組成物（エポキシ樹
脂と硬化剤との合計）１００部中のジオルガノポリシロ
キサン単位の示す量（重量部） ＊＊（状態）硬化後リード間にくぼみが観察され、封止
材表面が平滑でない。* Amount (parts by weight) of the diorganopolysiloxane unit in 100 parts of the composition excluding the inorganic filler (total of epoxy resin and curing agent) ** (state) Dimples are observed between leads after curing The surface of the sealing material is not smooth.
【００４１】表１の結果から明らかなように、本発明の
封止材によって封止されたＴＡＢ型半導体装置は、シリ
コンチップ上の封止材の膜厚が薄くかつ均一に制御さ
れ、また機械的特性も良好で、このため信頼性の高いこ
とが認められる。As is clear from the results shown in Table 1, in the TAB type semiconductor device encapsulated by the encapsulant of the present invention, the film thickness of the encapsulant on the silicon chip is controlled to be thin and uniform, and It has been found that the physical properties are also good, and therefore the reliability is high.
【００４２】[0042]
【発明の効果】本発明のＴＡＢ型半導体装置用封止材に
よれば、封止材の膜厚を均一かつ薄く制御でき、しかも
硬化皮膜の特性が良好であるので、ＴＡＢ型半導体装置
を良好に封止でき、封止されたＴＡＢ型半導体装置は信
頼性に優れたものである。According to the encapsulating material for TAB type semiconductor device of the present invention, the thickness of the encapsulating material can be controlled to be uniform and thin, and the characteristics of the cured film are good. The TAB type semiconductor device which can be encapsulated in the package has excellent reliability.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 土橋 和夫 群馬県碓氷郡松井田町大字人見１番地10 信越化学工業株式会社シリコ−ン電子材料 技術研究所内 (72)発明者 神宮 慎一 群馬県碓氷郡松井田町大字人見１番地10 信越化学工業株式会社シリコ−ン電子材料 技術研究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Kazuo Dobashi 1 Hitomi, Katsuta, Matsuida-cho, Usui-gun, Gunma Prefecture Shin-Etsu Chemical Co., Ltd. Silicon Electronics Research Laboratory (72) Inventor Shinichi Jingu Usui-gun, Gunma Prefecture No. 1 Hitomi, Oita, Matsuida-machi 10 Shin-Etsu Chemical Co., Ltd. Silicon Electronic Materials Technology Laboratory
Claims (2)
ン単位を含む化合物を該単位の量を上記（Ａ），（Ｂ）
成分の合計量１００重量部に対し２重量部以上とする
量、 【化１】 （但し、式中Ｒ1，Ｒ2はそれぞれメチル基、エチル基、
フェニル基又は水素原子、ｎは１以上の整数である。） （Ｄ）溶融シリカを上記（Ａ），（Ｂ）成分の合計量１
００重量部に対し２００重量部以上で、かつ、このうち
溶融球状シリカを１００重量部以上 を含有し、ＢＨ型粘度計を用いて２０ｒｐｍの回転数で
測定した場合の２５℃における粘度が２０００ポイズ以
下の液状エポキシ樹脂組成物からなるタブ型半導体装置
用封止材。1. A curable epoxy resin (A), (B) a curing agent, (C) a compound containing a diorganopolysiloxane unit represented by the following formula (1) in an amount of the above (A), ( B)
2 parts by weight or more based on 100 parts by weight of the total amount of the components, (However, in the formula, R 1 and R 2 are each a methyl group, an ethyl group,
Phenyl group or hydrogen atom, n is an integer of 1 or more. ) (D) Fused silica is the total amount of the above components (A) and (B) 1
200 parts by weight or more based on 00 parts by weight and 100 parts by weight or more of the fused spherical silica, and the viscosity at 25 ° C. measured at 20 rpm using a BH viscometer is 2000 poises. A sealing material for a tab-type semiconductor device, comprising the following liquid epoxy resin composition.
８ｍｍ以下の厚みにおいて封止されたタブ型半導体装
置。2. The cured film of the encapsulant according to claim 1,
A tab-type semiconductor device sealed in a thickness of 8 mm or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3317570A JP2785553B2 (en) | 1991-11-05 | 1991-11-05 | Tab-type semiconductor device sealing material and tab-type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3317570A JP2785553B2 (en) | 1991-11-05 | 1991-11-05 | Tab-type semiconductor device sealing material and tab-type semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05129475A true JPH05129475A (en) | 1993-05-25 |
| JP2785553B2 JP2785553B2 (en) | 1998-08-13 |
Family
ID=18089727
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3317570A Expired - Fee Related JP2785553B2 (en) | 1991-11-05 | 1991-11-05 | Tab-type semiconductor device sealing material and tab-type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2785553B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004331908A (en) * | 2003-05-12 | 2004-11-25 | Shin Etsu Chem Co Ltd | Liquid state epoxy resin composition and flip chip type semiconductor device |
| JP2006016431A (en) * | 2004-06-30 | 2006-01-19 | Shin Etsu Chem Co Ltd | Liquid epoxy resin composition for semiconductor sealing and flip chip type semiconductor |
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|---|---|---|---|---|
| JPS6284147A (en) * | 1985-10-07 | 1987-04-17 | Shin Etsu Chem Co Ltd | Epoxy resin composition |
| JPH02158637A (en) * | 1988-12-09 | 1990-06-19 | Nippon Chem Ind Co Ltd | Silica filler and sealing resin composition using the same |
| JPH02209916A (en) * | 1989-02-10 | 1990-08-21 | Mitsui Toatsu Chem Inc | Resin composition for semiconductor sealing use |
| JPH02247236A (en) * | 1989-03-20 | 1990-10-03 | Nippon Chem Ind Co Ltd | Fused fine spherical silica and sealing resin composition containing the same |
| JPH0324119A (en) * | 1989-06-22 | 1991-02-01 | Toshiba Chem Corp | Sealing resin composition and apparatus for sealing semiconductor |
| JPH03140322A (en) * | 1989-10-26 | 1991-06-14 | Toshiba Corp | Epoxy resin molding material for semiconductor-sealing and resin-sealed semiconductor device |
| JPH03177450A (en) * | 1989-12-05 | 1991-08-01 | Hitachi Chem Co Ltd | Epoxy resin composition for semiconductor and production of semiconductor device |
| JPH03220229A (en) * | 1989-11-22 | 1991-09-27 | Sumitomo Bakelite Co Ltd | Resin composition |
-
1991
- 1991-11-05 JP JP3317570A patent/JP2785553B2/en not_active Expired - Fee Related
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6284147A (en) * | 1985-10-07 | 1987-04-17 | Shin Etsu Chem Co Ltd | Epoxy resin composition |
| JPH02158637A (en) * | 1988-12-09 | 1990-06-19 | Nippon Chem Ind Co Ltd | Silica filler and sealing resin composition using the same |
| JPH02209916A (en) * | 1989-02-10 | 1990-08-21 | Mitsui Toatsu Chem Inc | Resin composition for semiconductor sealing use |
| JPH02247236A (en) * | 1989-03-20 | 1990-10-03 | Nippon Chem Ind Co Ltd | Fused fine spherical silica and sealing resin composition containing the same |
| JPH0324119A (en) * | 1989-06-22 | 1991-02-01 | Toshiba Chem Corp | Sealing resin composition and apparatus for sealing semiconductor |
| JPH03140322A (en) * | 1989-10-26 | 1991-06-14 | Toshiba Corp | Epoxy resin molding material for semiconductor-sealing and resin-sealed semiconductor device |
| JPH03220229A (en) * | 1989-11-22 | 1991-09-27 | Sumitomo Bakelite Co Ltd | Resin composition |
| JPH03177450A (en) * | 1989-12-05 | 1991-08-01 | Hitachi Chem Co Ltd | Epoxy resin composition for semiconductor and production of semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004331908A (en) * | 2003-05-12 | 2004-11-25 | Shin Etsu Chem Co Ltd | Liquid state epoxy resin composition and flip chip type semiconductor device |
| JP2006016431A (en) * | 2004-06-30 | 2006-01-19 | Shin Etsu Chem Co Ltd | Liquid epoxy resin composition for semiconductor sealing and flip chip type semiconductor |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2785553B2 (en) | 1998-08-13 |
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