JPS6219757U - - Google Patents
Info
- Publication number
- JPS6219757U JPS6219757U JP11136585U JP11136585U JPS6219757U JP S6219757 U JPS6219757 U JP S6219757U JP 11136585 U JP11136585 U JP 11136585U JP 11136585 U JP11136585 U JP 11136585U JP S6219757 U JPS6219757 U JP S6219757U
- Authority
- JP
- Japan
- Prior art keywords
- region
- island
- integrated circuit
- wiring layer
- channel stopper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Description
第1図及至第3図はそれぞれ本考案を説明する
ための平面図、断面図及び平面図、第4図及び第
5図はそれぞれ従来例を説明するための平面図、
断面図である。
主は図番の説明、1は半導体基板、6はベース
領域、8は酸化膜、9はチヤンネルストツパー、
14はエミツタ配線層、16は反転層、20は第
1の領域、21は第2の領域である。
1 to 3 are a plan view, a sectional view, and a plan view for explaining the present invention, respectively, and FIGS. 4 and 5 are plan views for explaining a conventional example, respectively.
FIG. The main part is the explanation of the drawing numbers, 1 is the semiconductor substrate, 6 is the base region, 8 is the oxide film, 9 is the channel stopper,
14 is an emitter wiring layer, 16 is an inversion layer, 20 is a first region, and 21 is a second region.
Claims (1)
域を形成した島領域と該島領域表面を被覆する絶
縁膜上を延在する配線層と該配線層直下の前記島
領域表面に生じる反転層を防止するためのチヤン
ネルストツパーを具備した半導体集積回路装置に
おいて、該チヤンネルストツパーは前記島領域表
面に構成したこれと同導電型の第1の領域と該第
1の領域両側面に設けた前記第1の領域より低不
純物濃度の第2の領域からなることを特徴とする
半導体集積回路装置。 To prevent an inversion layer from occurring on an island region in which at least one semiconductor region constituting a circuit element is formed, a wiring layer extending over an insulating film covering the surface of the island region, and a surface of the island region immediately below the wiring layer. In a semiconductor integrated circuit device equipped with a channel stopper, the channel stopper includes a first region of the same conductivity type formed on the surface of the island region and the first region provided on both sides of the first region. A semiconductor integrated circuit device comprising a second region having a lower impurity concentration than the second region.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1985111365U JPH079385Y2 (en) | 1985-07-19 | 1985-07-19 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1985111365U JPH079385Y2 (en) | 1985-07-19 | 1985-07-19 | Semiconductor integrated circuit device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6219757U true JPS6219757U (en) | 1987-02-05 |
JPH079385Y2 JPH079385Y2 (en) | 1995-03-06 |
Family
ID=30991221
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1985111365U Expired - Lifetime JPH079385Y2 (en) | 1985-07-19 | 1985-07-19 | Semiconductor integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH079385Y2 (en) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5164876A (en) * | 1974-12-03 | 1976-06-04 | Nippon Electric Co | ZETSUENGEETOGATADENKAIKOKAHANDOTAISOCHINOSEIZOHOHO |
JPS5234671A (en) * | 1975-07-31 | 1977-03-16 | Matsushita Electronics Corp | Semiconductor integrated circuit |
JPS54148486A (en) * | 1978-05-15 | 1979-11-20 | Hitachi Ltd | Semiconductor device |
JPS57155769A (en) * | 1981-03-20 | 1982-09-25 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS5923560A (en) * | 1982-07-29 | 1984-02-07 | Matsushita Electronics Corp | Switching element |
-
1985
- 1985-07-19 JP JP1985111365U patent/JPH079385Y2/en not_active Expired - Lifetime
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5164876A (en) * | 1974-12-03 | 1976-06-04 | Nippon Electric Co | ZETSUENGEETOGATADENKAIKOKAHANDOTAISOCHINOSEIZOHOHO |
JPS5234671A (en) * | 1975-07-31 | 1977-03-16 | Matsushita Electronics Corp | Semiconductor integrated circuit |
JPS54148486A (en) * | 1978-05-15 | 1979-11-20 | Hitachi Ltd | Semiconductor device |
JPS57155769A (en) * | 1981-03-20 | 1982-09-25 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS5923560A (en) * | 1982-07-29 | 1984-02-07 | Matsushita Electronics Corp | Switching element |
Also Published As
Publication number | Publication date |
---|---|
JPH079385Y2 (en) | 1995-03-06 |
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