JPH0418711B2 - - Google Patents

Info

Publication number: JPH0418711B2
Authority: JP; Japan
Prior art keywords: oxide film; polycrystalline silicon; gate; silicon layer; drain
Prior art date: 1985-06-21
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

JP60135583A

Other languages

English (en)

Japanese (ja)

Other versions

JPS61294870A (ja

Inventor

Naotaka Sumihiro

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

NEC Corp

Original Assignee

Nippon Electric Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1985-06-21

Filing date

1985-06-21

Publication date

1992-03-27

1985-06-21 Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd

1985-06-21 Priority to JP60135583A priority Critical patent/JPS61294870A/ja

1986-06-20 Priority to US06/876,897 priority patent/US4812898A/en

1986-12-25 Publication of JPS61294870A publication Critical patent/JPS61294870A/ja

1992-03-27 Publication of JPH0418711B2 publication Critical patent/JPH0418711B2/ja

Status Granted legal-status Critical Current

Links

229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 42
239000012535 impurity Substances 0.000 claims description 28
238000007667 floating Methods 0.000 claims description 27
239000004065 semiconductor Substances 0.000 claims description 22
239000000758 substrate Substances 0.000 claims description 13
238000000034 method Methods 0.000 description 14
238000010893 electron trap Methods 0.000 description 13
230000003647 oxidation Effects 0.000 description 12
238000007254 oxidation reaction Methods 0.000 description 12
230000000694 effects Effects 0.000 description 11
238000004519 manufacturing process Methods 0.000 description 8
230000005684 electric field Effects 0.000 description 7
230000005641 tunneling Effects 0.000 description 7
238000010438 heat treatment Methods 0.000 description 4
238000005468 ion implantation Methods 0.000 description 4
230000008569 process Effects 0.000 description 4
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
230000014759 maintenance of location Effects 0.000 description 3
229910052698 phosphorus Inorganic materials 0.000 description 3
239000011574 phosphorus Substances 0.000 description 3
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
229910052796 boron Inorganic materials 0.000 description 2
230000015556 catabolic process Effects 0.000 description 2
238000005516 engineering process Methods 0.000 description 2
238000000206 photolithography Methods 0.000 description 2
229920002120 photoresistant polymer Polymers 0.000 description 2
238000005204 segregation Methods 0.000 description 2
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
229910052785 arsenic Inorganic materials 0.000 description 1
RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
230000015572 biosynthetic process Effects 0.000 description 1
230000008859 change Effects 0.000 description 1
238000004140 cleaning Methods 0.000 description 1
238000011109 contamination Methods 0.000 description 1
230000008878 coupling Effects 0.000 description 1
238000010168 coupling process Methods 0.000 description 1
238000005859 coupling reaction Methods 0.000 description 1
230000006866 deterioration Effects 0.000 description 1
238000009792 diffusion process Methods 0.000 description 1
238000005530 etching Methods 0.000 description 1
230000005669 field effect Effects 0.000 description 1
239000010419 fine particle Substances 0.000 description 1
230000006870 function Effects 0.000 description 1
238000009413 insulation Methods 0.000 description 1
150000002500 ions Chemical class 0.000 description 1
230000000717 retained effect Effects 0.000 description 1
238000009279 wet oxidation reaction Methods 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Ceramic Engineering (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Non-Volatile Memory (AREA)
Semiconductor Memories (AREA)

JP60135583A 1985-06-21 1985-06-21 不揮発性半導体記憶装置 Granted JPS61294870A (ja)

Priority Applications (2)

Application Number	Priority Date	Filing Date	Title
JP60135583A JPS61294870A (ja)	1985-06-21	1985-06-21	不揮発性半導体記憶装置
US06/876,897 US4812898A (en)	1985-06-21	1986-06-20	Electronically programmable and erasable memory device having floating gate electrode with a unique distribution of impurity concentration

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP60135583A JPS61294870A (ja)	1985-06-21	1985-06-21	不揮発性半導体記憶装置

Publications (2)

Publication Number	Publication Date
JPS61294870A JPS61294870A (ja)	1986-12-25
JPH0418711B2 true JPH0418711B2 (zh)	1992-03-27

Family

ID=15155212

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP60135583A Granted JPS61294870A (ja)	1985-06-21	1985-06-21	不揮発性半導体記憶装置

Country Status (2)

Country	Link
US (1)	US4812898A (zh)
JP (1)	JPS61294870A (zh)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2633541B2 (ja) *	1987-01-07	1997-07-23	株式会社東芝	半導体メモリ装置の製造方法
US5252846A (en) *	1987-03-13	1993-10-12	Kabushiki Kaisha Toshiba	Semiconductor memory device with an improved erroneous write characteristic and erasure characteristic
JPS63248174A (ja) *	1987-04-03	1988-10-14	Mitsubishi Electric Corp	半導体記憶装置の製造方法
JPS63252481A (ja) *	1987-04-09	1988-10-19	Toshiba Corp	不揮発性半導体メモリ
JP2675304B2 (ja) *	1987-05-14	1997-11-12	三洋電機株式会社	不揮発性メモリ素子の製造方法
US4920512A (en) *	1987-06-30	1990-04-24	Mitsubishi Denki Kabushiki Kaisha	Non-volatile semiconductor memory capable of readily erasing data
JP2672530B2 (ja) *	1987-10-30	1997-11-05	松下電子工業株式会社	半導体記憶装置の製造方法
JP2603088B2 (ja) *	1987-11-17	1997-04-23	三菱電機株式会社	半導体装置
JPH021988A (ja) *	1987-12-03	1990-01-08	Texas Instr Inc <Ti>	電気的にプログラム可能なメモリ・セル
JPH01289170A (ja) *	1988-05-16	1989-11-21	Toshiba Corp	不揮発性半導体記憶装置
FR2635408B1 (fr) *	1988-08-11	1992-04-10	Sgs Thomson Microelectronics	Memoire de type eprom a haute densite d'integration
FR2635409B1 (fr) *	1988-08-11	1991-08-02	Sgs Thomson Microelectronics	Memoire de type eprom a haute densite d'integration possedant un facteur de couplage eleve, et son procede de fabrication
US6373093B2 (en) *	1989-04-28	2002-04-16	Nippondenso Corporation	Semiconductor memory device and method of manufacturing the same
US5063423A (en) *	1989-04-28	1991-11-05	Nippondenso Co., Ltd.	Semiconductor memory device of a floating gate tunnel oxide type
US5017979A (en) *	1989-04-28	1991-05-21	Nippondenso Co., Ltd.	EEPROM semiconductor memory device
US5355007A (en) *	1990-11-23	1994-10-11	Texas Instruments Incorporated	Devices for non-volatile memory, systems and methods
JPH0777237B2 (ja) *	1993-01-04	1995-08-16	日本電気株式会社	半導体記憶装置及びその製造方法
JPH06260610A (ja) *	1993-03-02	1994-09-16	Toshiba Corp	半導体記憶装置及びその製造方法
JP3008812B2 (ja) *	1995-03-22	2000-02-14	日本電気株式会社	不揮発性半導体記憶装置およびその製造方法
JP4377676B2 (ja) *	2003-12-24	2009-12-02	株式会社東芝	半導体装置およびその製造方法
JP2013115329A (ja) *	2011-11-30	2013-06-10	Toshiba Corp	不揮発性半導体記憶装置及びその製造方法
JP6260435B2 (ja) *	2014-04-25	2018-01-17	株式会社デンソー	半導体装置およびその製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4328565A (en) *	1980-04-07	1982-05-04	Eliyahou Harari	Non-volatile eprom with increased efficiency
US4435786A (en) *	1981-11-23	1984-03-06	Fairchild Camera And Instrument Corporation	Self-refreshing memory cell
JPS5921072A (ja) *	1982-07-26	1984-02-02	Mitsubishi Electric Corp	半導体不揮発性記憶装置
JPS5921071A (ja) *	1982-07-26	1984-02-02	Mitsubishi Electric Corp	半導体不揮発性記憶装置
US4688078A (en) *	1982-09-30	1987-08-18	Ning Hseih	Partially relaxable composite dielectric structure

1985
- 1985-06-21 JP JP60135583A patent/JPS61294870A/ja active Granted
1986
- 1986-06-20 US US06/876,897 patent/US4812898A/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
JPS61294870A (ja)	1986-12-25
US4812898A (en)	1989-03-14

Publication	Publication Date	Title
JPH0418711B2 (zh)	1992-03-27
JP4116428B2 (ja)	2008-07-09	マルチビットメモリセルを作製する方法
EP0193841B1 (en)	1991-05-08	Semiconductor device and method of manufacturing the same
US5424979A (en)	1995-06-13	Non-volatile memory cell
US6696340B2 (en)	2004-02-24	Semiconductor devices having a non-volatile memory transistor and methods for manufacturing the same
EP0921563A1 (en)	1999-06-09	Semiconductor device incorporating mos element and method for manufacturing the same
JP2004056095A (ja)	2004-02-19	不揮発性半導体記憶装置及びその製造方法
JP3630491B2 (ja)	2005-03-16	半導体装置
US6025229A (en)	2000-02-15	Method of fabricating split-gate source side injection flash memory array
JPH06104451A (ja)	1994-04-15	不揮発性半導体記憶装置
JP2643860B2 (ja)	1997-08-20	不揮発性半導体記憶装置及びその製造方法
JP3388121B2 (ja)	2003-03-17	不揮発性半導体記憶装置、製造方法及び電荷蓄積方法
JPH10144810A (ja)	1998-05-29	不揮発性半導体記憶装置およびその製造方法
JPH05226662A (ja)	1993-09-03	半導体記憶装置
KR0151621B1 (ko)	1998-10-01	비휘발성 메모리 반도체 소자 및 이의 제조방법
US8188536B2 (en)	2012-05-29	Memory device and manufacturing method and operating method thereof
JP3152749B2 (ja)	2001-04-03	半導体装置の製造方法
KR100685880B1 (ko)	2007-02-23	플래쉬 이이피롬 셀 및 그 제조방법
JP2793722B2 (ja)	1998-09-03	不揮発性半導体記憶装置およびその製造方法
JP3807633B2 (ja)	2006-08-09	不揮発性半導体記憶装置の製造方法
JPH0147905B2 (zh)	1989-10-17
JP3296415B2 (ja)	2002-07-02	不揮発性半導体記憶装置の製造方法
JP3869066B2 (ja)	2007-01-17	不揮発性半導体記憶装置及びその製造方法
JPH05267679A (ja)	1993-10-15	半導体装置及びその製造方法
JP3185746B2 (ja)	2001-07-11	不揮発性半導体記憶装置