JPH03167847A - Package for semiconductor-element - Google Patents
Package for semiconductor-elementInfo
- Publication number
- JPH03167847A JPH03167847A JP30860989A JP30860989A JPH03167847A JP H03167847 A JPH03167847 A JP H03167847A JP 30860989 A JP30860989 A JP 30860989A JP 30860989 A JP30860989 A JP 30860989A JP H03167847 A JPH03167847 A JP H03167847A
- Authority
- JP
- Japan
- Prior art keywords
- external lead
- glass
- lead terminal
- semiconductor element
- constituted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 51
- 239000011521 glass Substances 0.000 claims abstract description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 230000005291 magnetic effect Effects 0.000 claims abstract description 11
- 230000035699 permeability Effects 0.000 claims abstract description 10
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 9
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052596 spinel Inorganic materials 0.000 claims abstract description 6
- 239000011029 spinel Substances 0.000 claims abstract description 6
- 229910000464 lead oxide Inorganic materials 0.000 claims abstract description 5
- 229910052708 sodium Inorganic materials 0.000 claims abstract description 4
- 229910052700 potassium Inorganic materials 0.000 claims abstract 3
- 238000003860 storage Methods 0.000 claims description 8
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 6
- 239000011734 sodium Substances 0.000 claims description 6
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims 1
- 239000011591 potassium Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 abstract description 7
- 239000002184 metal Substances 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 7
- 239000000126 substance Substances 0.000 abstract description 4
- 239000000853 adhesive Substances 0.000 abstract description 3
- 230000001070 adhesive effect Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 2
- 239000011347 resin Substances 0.000 abstract description 2
- 229920005989 resin Polymers 0.000 abstract description 2
- 238000005219 brazing Methods 0.000 abstract 1
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 239000005394 sealing glass Substances 0.000 description 18
- 238000007789 sealing Methods 0.000 description 9
- 229910000833 kovar Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical class [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 description 5
- 229910001950 potassium oxide Inorganic materials 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910001948 sodium oxide Inorganic materials 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 229910017709 Ni Co Inorganic materials 0.000 description 2
- 229910003267 Ni-Co Inorganic materials 0.000 description 2
- 229910003262 Ni‐Co Inorganic materials 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は半導体素子を収容する半導体素子収納用パッケ
ージの改良に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an improvement in a semiconductor element housing package that houses a semiconductor element.
（従来の技術）
従来、半導体素子を収容するためのパッケージ、特にガ
ラスの溶着によって封止するガラス封止型半導体素子収
納用パッケージは、絶縁基体と蓋体とから威り、内部に
半導体素子を収容する空所を有する絶縁容器と、該容器
内に収容される半導体素子を外部電気回路に電気的に接
続するための外部リード端子とから構威されており、絶
縁基体及び蓋体の相対向する主面に予め封止用のガラス
部材を被着形戒すると共に、絶縁基体主面に外部リード
端子を固定し、半導体素子の各電極と外部リード端子と
をワイヤボンド接続した後、絶縁基体及び蓋体のそれぞ
に被着させた封止用のガラス部材を溶融一体化させるこ
とによって内部に半導体素子を気密に封止している．
（発明が解決しようとする課題）
しかし乍ら、この従来のガラス封止型半導体素子収納用
パッケージは通常、外部リード端子がコバール（２９
ＷｔχＮｉ−１６ ＷｔＸ Ｃｏ−５５ ＷｔＸＰｅ合
金）や４２ＡＩＩｏＶ（４２ ＷｔＸ Ｎｉ−５８ Ｗ
ｔＸ Ｆｅ合金）の導電性材料から戒っており、該コバ
ールや４２Ａ１１ｏｙ等は透磁率が高く、且つ導電率が
低いことから以下に述べる欠点を有する．
即ち、
■コバールや４２Ａ ｌ ｊｏｙは鉄（Ｆｅ）、ニッケ
ル（Ｎｉ）、コバルト（ＣＯ）といった強磁性体金属の
みから成っており、その透磁率は２５０〜７００ （Ｃ
ＧＳ）と高い。そのためこのコバールや４２Ａｌｌｏｙ
等から或る外部リード端子に電流が流れると外部リード
端子中に透磁率に比例した大きな自己インダクタンスが
発生し、これが逆起電力を誘発してノイズとなると共に
、該ノイズが半導体素子に入力されて半導体素子に誤動
作を生じさせる、
■コバールや４２Ａ１１ｏｙはその導電率が３．０〜３
．５ｚ（ＩＡＣＳ）と低い．そのためこのコバールや４
２Ａ １ １ｏｙ等から戒る外部リード端子に信号を伝
搬させた場合、信号の伝殿速度が極めて遅いものとなり
、高速駆動を行う半導体素子はその収容が不可となって
しまう、
■半導体素子収納用バフケージの内部に収容する半導体
素子の高密度化、高集積化の進展に伴い、半導体素子の
電極数が大幅に増大しており、半導体素子の各電極を外
部電気回路に接続する外部リード端子の線幅も極めて細
くなってきている。そのため外部リード端子は上記■に
記載のコバールや４２Ａｌ１ｏｙの導電率が低いことと
相俊って電気抵抗が極めて大きなものになってきており
、外部リード端子に信号を伝搬させると、該外部リード
端子の電気抵抗に起因して信号が大きく減衰し、内部に
収容する半導体素子に信号を正確に入力することができ
ず、半導体素子に誤動作を生じさせてしまう、
等の欠点を有していた。(Prior Art) Conventionally, packages for accommodating semiconductor devices, especially glass-sealed semiconductor device storage packages that are sealed by glass welding, are made up of an insulating base and a lid, and the semiconductor devices are not placed inside. It consists of an insulating container having a cavity for accommodating the semiconductor device, and an external lead terminal for electrically connecting the semiconductor device accommodated in the container to an external electric circuit. A glass member for sealing is preliminarily applied to the main surface of the insulating substrate, external lead terminals are fixed to the main surface of the insulating substrate, and each electrode of the semiconductor element and the external lead terminal are connected by wire bonding. The semiconductor element is hermetically sealed inside by melting and integrating the sealing glass members attached to each of the lid and lid. (Problem to be Solved by the Invention) However, in this conventional glass-sealed package for storing semiconductor elements, the external lead terminals are usually made of Kovar (29
WtχNi-16 WtX Co-55 WtXPe alloy) and 42AIIoV (42 WtX Ni-58 W
Kovar, 42A11oy, etc. have high magnetic permeability and low conductivity, so they have the disadvantages described below. That is, Kovar and 42A l joy are made only of ferromagnetic metals such as iron (Fe), nickel (Ni), and cobalt (CO), and their magnetic permeability is 250 to 700 (C
GS) and high. Therefore, this Kovar and 42Alloy
When a current flows through an external lead terminal, a large self-inductance proportional to the magnetic permeability is generated in the external lead terminal, which induces a back electromotive force and becomes noise, and the noise is input to the semiconductor element. ■The conductivity of Kovar and 42A11oy is 3.0 to 3.
．． As low as 5z (IACS). Therefore, this Kobar and 4
If a signal is propagated from a 2A 1 1oy etc. to an external lead terminal, the signal propagation speed will be extremely slow, making it impossible to accommodate semiconductor devices that drive at high speed. ■For semiconductor device storage With the progress of higher density and higher integration of semiconductor elements housed inside buff cages, the number of electrodes on semiconductor elements has increased significantly, and the number of external lead terminals that connect each electrode of semiconductor elements to an external electric circuit has increased significantly. The line width has also become extremely thin. Therefore, the electrical resistance of the external lead terminal has become extremely large due to the low conductivity of Kovar and 42Aloy described in (2) above, and when a signal is propagated to the external lead terminal, the external lead terminal The signal is greatly attenuated due to the electrical resistance of the device, making it impossible to accurately input the signal to the semiconductor device housed inside the device, resulting in malfunction of the semiconductor device.
（発明の目的）
本発明は上記欠点に鑑み案出されたもので、その目的は
外部リード端子で発生するノイズ及び外部リード端子に
おける信号の減衰を極小となし、内部に収容する半導体
素子への信号の入出力を確実に行うことを可能として半
導体素子を長期間にわたり正常、且つ安定に作動させる
ことができる半導体素子収納用パッケージを提供するこ
とにある。(Object of the Invention) The present invention was devised in view of the above drawbacks, and its purpose is to minimize the noise generated at the external lead terminal and the attenuation of the signal at the external lead terminal, and to minimize the noise generated at the external lead terminal and the attenuation of the signal at the external lead terminal. It is an object of the present invention to provide a package for storing a semiconductor element, which enables reliable input and output of signals and allows the semiconductor element to operate normally and stably for a long period of time.
また本発明の他の目的は高速駆動を行う半導体素子を収
容することができる半導体素子収納用ノくッケージを提
供することにある．
（課題を解決するための手段）
本発明は内部に半導体素子を収容するための空所を有す
るｉａ容器に外部リード端子をガラス部材を介して取着
して戒る半導体素子収納用パ・ノケージにおいて、前記
絶縁容器をスビネルもしくはステアタイト質焼結体で、
外部リード端子を透磁率２００ （ＣＧＳ）以下、熱膨
張係数７０乃至８５Ｘ１０−’ ／”Ｃ、導電率５０％
（ ＩＡＣＳ ）以上の金属で、ガラス部材をシリカ５
５．０乃至７５．ＯＷｔ％ ，ナトリウム、カリウムの
酸化物の少なくとも１種１０．０乃至２０．Ｏ ＷｔＸ
、酸化鉛２０．０乃至４０．０Ｗｔ％から或るガラスで
形成したことを特徴とするものである。Another object of the present invention is to provide a semiconductor device storage package capable of accommodating semiconductor devices that operate at high speed. (Means for Solving the Problems) The present invention provides a package for storing semiconductor elements in which external lead terminals are attached via a glass member to an IA container having a cavity for accommodating semiconductor elements therein. , the insulating container is made of Subinel or steatite sintered body,
The external lead terminal has a magnetic permeability of 200 (CGS) or less, a thermal expansion coefficient of 70 to 85X10-'/''C, and an electrical conductivity of 50%.
(IACS) or higher metal, and the glass member is made of silica 5
5.0 to 75. OWt%, at least one of sodium and potassium oxides 10.0 to 20. O WtX
It is characterized in that it is made of a certain glass containing 20.0 to 40.0 wt% of lead oxide.
（実施例） 次に本発明を添付図面に基づき詳細に説明する。(Example) Next, the present invention will be explained in detail based on the accompanying drawings.
第１図及び第２図は本発明の半導体素子収納用パッケー
ジの一実施例を示し、ｌは絶縁基体、２は蓋体である。FIGS. 1 and 2 show an embodiment of the semiconductor element storage package of the present invention, where 1 is an insulating base and 2 is a lid.
この絶縁基体１と蓋体２とにより絶縁容器３が構成され
る。The insulating base 1 and the lid 2 constitute an insulating container 3.
前記絶縁基体１及び蓋体２はそれぞれの中央部に半導体
素子を収容する空所を形或するための凹部が設けてあり
、絶縁基体ｌの凹部底面には半導体素子４が樹脂、ガラ
ス、ロウ剤等の接着剤を介し取着固定される。The insulating base 1 and the lid 2 are each provided with a recess in the center to form a cavity for accommodating the semiconductor element, and the semiconductor element 4 is placed on the bottom of the recess of the insulating base 1 with resin, glass, or wax. It is attached and fixed using an adhesive such as an adhesive.
前記絶縁基体ｌ及び蓋体２はスピネルもしくはステアタ
イト質焼結体から戒り、第１図に示すような絶縁基体Ｉ
及び蓋体２に対応した形状を有するプレス型内に、スビ
ネルの場合はマグネシア （ＭｇＯ）、アルミナ（八１
２０３ ）の原料粉末を、ステアタイト質焼結体の場合
はマグネシア（ＭｇＯ） 、シリカ（ＳｉＯｚ）等の原
料粉末を充填させるとともに一定圧力を印加して戒形し
、しかる後、戒形品を約ｌ２００〜１７００℃の温度で
焼戒することによって製作される。The insulating base I and the lid 2 are made of spinel or steatite sintered body, and are made of an insulating base I as shown in FIG.
In the case of Subinel, magnesia (MgO) and alumina (81
In the case of a steatite sintered body, the raw material powder of 203) is filled with raw material powder such as magnesia (MgO) or silica (SiOz) and shaped by applying a constant pressure, and then the shaped product is shaped. It is produced by burning at a temperature of approximately 200 to 1,700 degrees Celsius.
尚、前記絶縁基体ｌ及び蓋体２を形成するスピネル、ス
テアタイト質焼結体はその熱膨張係数が７０乃至８５Ｘ
１０−’／ ’Ｃであり、後述する封止用ガラス部材の
熱膨張係数との関係において絶縁基体ｌ及び蓋体２と封
止用ガラス部材間に大きな熱膨張の差が生じることはな
い。The spinel and steatite sintered bodies forming the insulating base 1 and the lid 2 have a thermal expansion coefficient of 70 to 85X.
10-'/'C, and there is no large difference in thermal expansion between the insulating base 1 and the lid 2 and the sealing glass member in relation to the coefficient of thermal expansion of the sealing glass member, which will be described later.
また前記絶縁基体１及び蓋体２にはその相対向する主面
に封止用のガラス部材６が予め被着形成されており、該
絶縁基体ｌ及び蓋体２の各々に被着されている封止用ガ
ラス部材６を加熱溶融させ一体化させることにより絶縁
容器３内の半導体素子４を気密に封止する。Further, a sealing glass member 6 is formed in advance on the opposing main surfaces of the insulating base 1 and the lid 2, and is adhered to each of the insulating base 1 and the lid 2. The semiconductor element 4 inside the insulating container 3 is hermetically sealed by heating and melting the sealing glass member 6 to integrate it.
前記絶縁基体１及び蓋体２の相対向する主面に被着され
る封止用ガラス部材６は、シリカ５５．０乃至７５．０
Ｗｔ％ ，ナトリウム、カリウムの酸化物の少なくとも
１種１０．０乃至２０．０Ｗｔ％，酸化鉛２０．０乃至
４０．ＯＷｔχより形成されるガラスから戒り、上記各
威分を所定の値となるように秤量混合すると共に、該混
合粉末を１３００〜１４００℃の温度で加熱溶融させる
ことによって製作される．このガラス部材６の熱膨張．
係数は８５〜９５Ｘ１０−’／ ｔである．前記封止用
ガラス部材６は、その熱膨張係数が８５乃至９５Ｘ１０
−’／ ℃であり、絶縁基体１及び蓋体？の各々の熱膨
張係数と近似することから絶縁基体ｌ及び蓋体２の各々
に被着されている封止用ガラス部材６を加熱溶融串せ一
体化させることにより絶縁容器３内の半導体素子４を気
密に封止する際、絶縁基体１及び蓋体２と封止用ガラス
部材６との間には両者の熱膨張係数の相違に起因する熱
応力が発生することは殆どなく、絶縁基体１と蓋体２と
を封止用ガラス部材６を介し強固に接合することが可能
となる。The sealing glass member 6 attached to the opposing main surfaces of the insulating base 1 and the lid 2 is made of silica 55.0 to 75.0.
Wt%, at least one of sodium and potassium oxides 10.0 to 20.0 Wt%, lead oxide 20.0 to 40. It is produced by weighing and mixing the above-mentioned components to a predetermined value, and heating and melting the mixed powder at a temperature of 1300 to 1400°C. Thermal expansion of this glass member 6.
The coefficient is 85~95X10-'/t. The sealing glass member 6 has a thermal expansion coefficient of 85 to 95X10.
-'/℃, insulating base 1 and lid? Since the coefficient of thermal expansion is similar to that of each of When airtightly sealing the insulating base 1 and lid 2, there is almost no thermal stress generated between the insulating base 1 and the lid 2 and the sealing glass member 6 due to the difference in coefficient of thermal expansion between the two. It becomes possible to firmly join the lid body 2 to the lid body 2 through the sealing glass member 6.
尚、前記封止用ガラス部材６はシリヵ（Ｓｉ（ｈ）が５
５．ＯＷｔχ未満であるとガラスの結晶化が進んで絶縁
容器３の気密封止が困難となり、また７５．０Ｗｔ％を
越えるとガラスの熱膨張が小さくなって絶縁基体１と蓋
体２の熱膨張と合わなくなることからシリカ（ＳｉＯ■
）は６０．０乃至〜７０．０Ｗｔ％ （７）範囲に限定
される。The sealing glass member 6 is made of silica (Si(h) is 5
5. If it is less than OWtχ, the crystallization of the glass will progress and it will be difficult to hermetically seal the insulating container 3, and if it exceeds 75.0 Wt%, the thermal expansion of the glass will be small and the thermal expansion of the insulating base 1 and the lid 2 will be reduced. Silica (SiO■
) is limited to a range of 60.0 to 70.0 Wt% (7).
またナトリウム、カリウムの酸化物がｉｏ．ｏｗｔχ未
満であるとガラスを製作する際のガラスの溶融温度が大
幅に上がって作業性が著しく悪くなり、また２０．ＯＷ
ｔ！を越えるとガラスの耐薬品性が劣化して絶縁容器３
の気密封止の信頼性が大きく低下するためナトリウム、
カリウムの酸化物は１０．０乃至２０．ＯＷｔχの範囲
に限定される．また酸化鉛（ＰｂＯ）が２０．Ｏ Ｗｔ
χ未満であるとガラスの熱膨張が小さくなって絶縁基体
ｌと蓋体２の熱膨張と合わなくなり、また４０．０Ｗｔ
％を越えるとガラスの耐薬品性が劣化して絶縁容器３の
気密封止の信頼性が大きく低下するため酸化鉛（ＰｂＯ
）は２０．０乃至４０．０Ｗｔ％の範囲に限定される。Also, sodium and potassium oxides are io. If it is less than owtχ, the melting temperature of the glass during glass production will rise significantly, resulting in significantly poor workability. OW
T! If the chemical resistance of the glass is exceeded, the chemical resistance of the glass will deteriorate and the insulation container 3
Sodium, as the reliability of hermetic sealing is greatly reduced.
Potassium oxide is 10.0 to 20. limited to the range of OWtχ. Also, lead oxide (PbO) is 20. O Wt
If it is less than χ, the thermal expansion of the glass becomes small and does not match the thermal expansion of the insulating base 1 and the lid 2, and 40.0 Wt.
%, the chemical resistance of the glass deteriorates and the reliability of hermetic sealing of the insulating container 3 is greatly reduced.
) is limited to a range of 20.0 to 40.0 Wt%.
前記封止用ガラス部材６は前述した成分から成るガラス
に適当な有機溶剤、溶媒を添加して得たガラスペースト
を従来周知の厚膜手法を採用することによって絶縁基体
ｌ及び蓋体２の相対向する主面に被着形或される。The sealing glass member 6 is made by applying a conventionally well-known thick film method to a glass paste obtained by adding a suitable organic solvent or solvent to the glass made of the above-mentioned components. The main surface facing the substrate is coated.
前記絶縁基体ｌと蓋体２との間には導電性材料から戒る
外部リード端子５が配されており、該外部リード端子５
は半導体素子４の各電極がワイヤ７を介し電気的に接続
され、外部リード端子５を外部電気回路に接続すること
によって半導体素子４が外部電気回路に接続されること
となる。An external lead terminal 5 made of conductive material is disposed between the insulating base l and the lid 2.
Each electrode of the semiconductor element 4 is electrically connected via the wire 7, and the semiconductor element 4 is connected to the external electric circuit by connecting the external lead terminal 5 to the external electric circuit.
前記外部リード端子５は絶縁基体１と蓋体２の相対向す
る主面に被着させた封止用ガラス部材６を溶融一体化さ
せ、絶縁容器３を気密封止する際に同時に絶縁基体１と
蓋体２との間に取着される。The external lead terminal 5 is formed by melting and integrating the sealing glass member 6 attached to the opposing main surfaces of the insulating base 1 and the lid 2, and simultaneously sealing the insulating base 1 when the insulating container 3 is hermetically sealed. and the lid body 2.
前記外部リード端子５は非磁性体金属である銅（Ｃｕ）
から成る芯体の外表面に銅（Ｃｕ） ／コバール（Ｐｅ
−Ｎｉ−Ｃｏ合金）／銅（Ｃｕ）の接合金属を被着させ
たもの、或いは板状のコバール（Ｐｅ−Ｎｉ−Ｃｏ合金
〉もしくはインハー合金（３６．５ ＷｔＸ Ｎｉ−６
３．５ ＷｔＸＦｅ合金）の上下面に非磁性体金属であ
るｍ（Ｃｕ）を接合させたもの等から戒り、その透磁率
は２００ （ＣＧＳ）以下、導電率は５０χ（ＩＡＣＳ
）以上、熱膨張係数は７０〜８５Ｘ１０−’／ ’Ｃの
導電性材料から成る．前記外部リード端子５はその透磁
率が２００ （ＣＧＳ）以下であり、透磁率が低いこと
から外部リード端子５に電流が流れたとしても外部リー
ド端子５中には大きな自己インダクタンスが発生するこ
とはなく、その結果、前記自己インダクタンスにより誘
発される逆起電力に起因したノイズを極小となし、内部
に収容する半導体素子４を常に正常に作動させることが
できる。The external lead terminal 5 is made of copper (Cu), which is a non-magnetic metal.
The outer surface of the core consists of copper (Cu)/Kovar (Pe).
-Ni-Co alloy) / copper (Cu) bonding metal coated, or plate-shaped Kovar (Pe-Ni-Co alloy) or Inhar alloy (36.5 WtX Ni-6
3.5 Wt
), it is made of a conductive material with a thermal expansion coefficient of 70 to 85X10-'/'C. The external lead terminal 5 has a magnetic permeability of 200 (CGS) or less, and since the magnetic permeability is low, even if a current flows through the external lead terminal 5, a large self-inductance will not occur in the external lead terminal 5. As a result, the noise caused by the back electromotive force induced by the self-inductance can be minimized, and the semiconductor element 4 housed inside can always operate normally.
また前記外部リード端子５はその導電率が５０２ （Ｉ
ＡＣＳ）以上であり、電気を流し易いことから外部リー
ド端子５の信号伝搬速度を極めて速いものとなすことが
でき、絶縁容器３内に収容した半導体素子４を高速駆動
させたとしても半導体素子４と外部電気回路との間にお
ける信号の出し入れは常に安定、且つ確実となすことが
できる。Further, the external lead terminal 5 has a conductivity of 502 (I
ACS), and since electricity can easily flow through the external lead terminal 5, the signal propagation speed of the external lead terminal 5 can be made extremely high, and even if the semiconductor element 4 housed in the insulating container 3 is driven at high speed, the semiconductor element 4 The input/output of signals between the external electric circuit and the external electric circuit can always be performed stably and reliably.
また同時に外部リード端子５の導電率が高いことから外
部リード端子５の線幅が細くなったとしても外部リード
端子５の電気抵抗を低く抑えることができ、その結果、
外部リード端子５における信号の減衰を極小として内部
に収容する半導体素子４に外部電気回路から供給される
電気信号を正確に入力することができる。At the same time, since the conductivity of the external lead terminal 5 is high, even if the line width of the external lead terminal 5 becomes thin, the electrical resistance of the external lead terminal 5 can be kept low, and as a result,
By minimizing the attenuation of the signal at the external lead terminal 5, it is possible to accurately input the electrical signal supplied from the external electrical circuit to the semiconductor element 4 housed inside.
また更に前記外部リード端子５はその熱膨張係数が７０
乃至８５×１０−’／ ℃であり、封止用ガラス部材６
の熱膨張係数と近似することから外部リード端子５を絶
縁基体１と蓋体２の間に封止用ガラス部材６を用いて固
定する際、外部リード端子５と封止用ガラス部材６との
間には両者の熱膨張係数の相違に起因する熱応力が発生
することはなく、外部リード端子５を封止用ガラス部材
６で強固に固定することも可能となる。Furthermore, the external lead terminal 5 has a coefficient of thermal expansion of 70.
to 85×10-'/°C, and the sealing glass member 6
When the external lead terminal 5 is fixed between the insulating base 1 and the lid 2 using the sealing glass member 6, the thermal expansion coefficient of the external lead terminal 5 and the sealing glass member 6 is approximated by Thermal stress due to the difference in coefficient of thermal expansion between the two does not occur, and the external lead terminal 5 can be firmly fixed with the sealing glass member 6.
かくして、この半導体素子収納用パッケージによれば絶
縁基体１の凹部底面に半導体素子４を取着固定するとと
もに該半導体素子４の各電極をボンディングワイヤ７に
より外部リード端子５に接続させ、しかる後、絶縁基体
１と蓋体２とを該絶縁基体１及び蓋体２の相対向する主
面に予め被着させておいた封止用ガラス部材６を溶融一
体化させることによって接合させ、これによって最終製
品としての半導体装置が完成する。Thus, according to this semiconductor element storage package, the semiconductor element 4 is attached and fixed to the bottom surface of the recess of the insulating substrate 1, and each electrode of the semiconductor element 4 is connected to the external lead terminal 5 by the bonding wire 7, and then, The insulating base 1 and the lid 2 are joined together by melting and integrating the sealing glass member 6 that has been previously applied to the opposing main surfaces of the insulating base 1 and the lid 2, and thereby the final The semiconductor device as a product is completed.
（発明の効果）
本発明の半導体素子収納用パッケージによれば、半導体
素子を収容するための絶縁容器をスピネルもしくはステ
アタイト質焼結体で、外部リード端子を透磁率が２００
（ＣＧＳ）以下、導電率が５ｏｚ（ＩＡＣＳ）以上、
熱膨張係数が７０乃至８５Ｘ１０−’／ ℃の金属で、
ガラス部材をシリカ５５．０乃至７５．０Ｗｔ％ 、ナ
トリウム、カリウムの酸化物の少なくとも１種１０．０
乃至２０．ＯＷｔχ、酸化鉛２０．０乃至４ｏ．ｏｗｔ
ｚ カラ或るガラスで形成したことから外部リード端子
に電流を流したとしても該外部リード端子中に大きな自
己インダクタンスが発生することはなく、その結果、前
記自己インダクタンスにより誘発される逆起電力に起因
したノイズを極小となし、内部に収容する半導体素子を
常に正常に作動させることが可能となる。(Effects of the Invention) According to the semiconductor device storage package of the present invention, the insulating container for accommodating the semiconductor device is made of spinel or steatite sintered body, and the external lead terminal has a magnetic permeability of 200.
(CGS) or less, conductivity is 5oz or more (IACS),
A metal with a thermal expansion coefficient of 70 to 85 x 10-'/°C,
The glass member contains 55.0 to 75.0 wt% of silica and 10.0% of at least one of sodium and potassium oxides.
to 20. OWtχ, lead oxide 20.0 to 4o. owt
Since it is made of a certain glass, even if a current is passed through the external lead terminal, a large self-inductance will not be generated in the external lead terminal, and as a result, the back electromotive force induced by the self-inductance will be reduced. It is possible to minimize the resulting noise and to always operate the semiconductor element housed inside normally.
また外部リード端子の信号伝搬速度を極めて速いものと
なす・ことができ、絶縁容器内に収容した半導体素子を
高速駆動させたとしても半導体素子と外部電気回路との
間における信号の出し入れを安定、且つ確実となすこと
が可能となる。In addition, the signal propagation speed of the external lead terminal can be made extremely high, and even if the semiconductor device housed in the insulating container is driven at high speed, the signal can be stably transferred between the semiconductor device and the external electric circuit. Moreover, it becomes possible to do so reliably and reliably.
更に外部リード端子の線幅が細くなったとしても外部リ
ード端子の電気抵抗を低く抑えることができ、その結果
、外部リード端子における信号の減衰を極小として内部
に収容する半導体素子に外部電気回路から供給される電
気信号を正確に入力することができる。Furthermore, even if the line width of the external lead terminal becomes thinner, the electrical resistance of the external lead terminal can be kept low, and as a result, the attenuation of the signal at the external lead terminal is minimized, and the external electrical circuit is connected to the semiconductor element housed inside. The supplied electrical signal can be input accurately.
また更に前記外部リード端子はその熱膨張係数が絶縁基
体、蓋体及び封止用ガラス部材の各々の熱膨張係数と近
似し、絶縁基体と蓋体との間に外部リード端子を挟み、
各々を封止用ガラス部材で取着接合したとしても絶縁基
体及び蓋体と封止用ガラス部材との間、外部リード端子
と封止用ガラス部材との間のいずれにも熱膨張係数の相
違に起因する熱応力は発生せず、すべてを強固に取着接
合することも可能となる。Furthermore, the external lead terminal has a coefficient of thermal expansion that approximates each of the coefficients of thermal expansion of the insulating base, the lid, and the sealing glass member, and the external lead terminal is sandwiched between the insulating base and the lid,
Even if each is attached and bonded with a glass sealing member, there are differences in the coefficient of thermal expansion between the insulating base and lid and the glass sealing member, and between the external lead terminal and the glass sealing member. There is no thermal stress caused by this, and it is possible to firmly attach and join everything.
【図面の簡単な説明】
第１図は本発明の半導体素子収納用パッケージの一実施
例を示す断面図、第２図は第１図に示すパッケージの絶
縁基体上面より見た平面図である。
１ ・・絶縁基体 ２・・蓋体
３ ・・絶縁容器
５ ・・外部リード端子
６ ・・封止用ガラス部材BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a sectional view showing an embodiment of a semiconductor element storage package of the present invention, and FIG. 2 is a plan view of the package shown in FIG. 1 as viewed from the top surface of an insulating base. 1...Insulating base 2...Lid 3...Insulating container 5...External lead terminal 6...Glass member for sealing
Claims (1)
容器に外部リード端子をガラス部材を介して取着して成
る半導体素子収納用パッケージにおいて、前記絶縁容器
をスピネルもしくはステアタイト質焼結体で、外部リー
ド端子を透磁率２００（ＣＧＳ）以下、熱膨張係数７０
乃至８５×１０＾−＾７／℃、導電率５０％（ＩＡＣＳ
）以上の金属で、ガラス部材をシリカ５５．０乃至７５
．０Ｗｔ％、ナトリウム、カリウムの酸化物の少なくと
も１種１０．０乃至２０．０Ｗｔ％、酸化鉛２０．０乃
至４０．０Ｗｔ％から成るガラスで形成したことを特徴
とする半導体素子収納用パッケージ。In a semiconductor device storage package in which an external lead terminal is attached via a glass member to an insulating container having a cavity for accommodating a semiconductor device inside, the insulating container is made of spinel or steatite sintered body. , the external lead terminal has a magnetic permeability of 200 (CGS) or less and a thermal expansion coefficient of 70.
~85×10^-^7/℃, conductivity 50% (IACS
) or above, and the glass member is made of silica 55.0 to 75.
．． 1. A package for housing a semiconductor element, characterized in that it is formed of glass comprising 0 Wt%, 10.0 to 20.0 Wt% of at least one of the oxides of sodium and potassium, and 20.0 to 40.0 Wt% of lead oxide.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1308609A JP2747613B2 (en) | 1989-11-27 | 1989-11-27 | Package for storing semiconductor elements |
| US07/573,406 US5057905A (en) | 1989-08-25 | 1990-08-24 | Container package for semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1308609A JP2747613B2 (en) | 1989-11-27 | 1989-11-27 | Package for storing semiconductor elements |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03167847A true JPH03167847A (en) | 1991-07-19 |
| JP2747613B2 JP2747613B2 (en) | 1998-05-06 |
Family
ID=17983104
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1308609A Expired - Lifetime JP2747613B2 (en) | 1989-08-25 | 1989-11-27 | Package for storing semiconductor elements |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2747613B2 (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5711847A (en) * | 1978-02-06 | 1982-01-21 | Ibm | Nonporous glass-ceramic body |
| JPS6265954A (en) * | 1985-09-18 | 1987-03-25 | Nippon Electric Glass Co Ltd | Borosilicate glass for sealing alumina |
| JPS63291834A (en) * | 1987-04-27 | 1988-11-29 | コーニング グラス ワークス | Glass ceramics for electronic packing, thermally crystalline glass and substrate therefrom |
-
1989
- 1989-11-27 JP JP1308609A patent/JP2747613B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5711847A (en) * | 1978-02-06 | 1982-01-21 | Ibm | Nonporous glass-ceramic body |
| JPS6265954A (en) * | 1985-09-18 | 1987-03-25 | Nippon Electric Glass Co Ltd | Borosilicate glass for sealing alumina |
| JPS63291834A (en) * | 1987-04-27 | 1988-11-29 | コーニング グラス ワークス | Glass ceramics for electronic packing, thermally crystalline glass and substrate therefrom |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2747613B2 (en) | 1998-05-06 |
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