JPH03124005A - Superstructure nitride alloy film - Google Patents
Superstructure nitride alloy filmInfo
- Publication number
- JPH03124005A JPH03124005A JP26239989A JP26239989A JPH03124005A JP H03124005 A JPH03124005 A JP H03124005A JP 26239989 A JP26239989 A JP 26239989A JP 26239989 A JP26239989 A JP 26239989A JP H03124005 A JPH03124005 A JP H03124005A
- Authority
- JP
- Japan
- Prior art keywords
- film
- magnetic
- nitride
- alloy film
- nitride alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 56
- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 38
- 239000000956 alloy Substances 0.000 title claims abstract description 38
- 238000010030 laminating Methods 0.000 claims abstract description 4
- 229910018509 Al—N Inorganic materials 0.000 claims abstract description 3
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 3
- 229910052796 boron Inorganic materials 0.000 claims abstract description 3
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 3
- 229910052742 iron Inorganic materials 0.000 claims abstract description 3
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 3
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 3
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 3
- 239000004065 semiconductor Substances 0.000 claims abstract description 3
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 3
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 3
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 3
- 229910052799 carbon Inorganic materials 0.000 claims abstract 2
- 229910052735 hafnium Inorganic materials 0.000 claims abstract 2
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract 2
- 229910052710 silicon Inorganic materials 0.000 claims abstract 2
- 229910052721 tungsten Inorganic materials 0.000 claims abstract 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 229910052752 metalloid Inorganic materials 0.000 claims description 2
- 150000002738 metalloids Chemical class 0.000 claims description 2
- 229910015397 B-N Inorganic materials 0.000 claims 1
- 229910015407 B—N Inorganic materials 0.000 claims 1
- 229910007991 Si-N Inorganic materials 0.000 claims 1
- 229910006294 Si—N Inorganic materials 0.000 claims 1
- 230000005415 magnetization Effects 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 7
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- 238000005260 corrosion Methods 0.000 abstract description 5
- 230000007797 corrosion Effects 0.000 abstract description 5
- 229910001004 magnetic alloy Inorganic materials 0.000 abstract description 5
- 230000014509 gene expression Effects 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 6
- 230000005389 magnetism Effects 0.000 description 5
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910007744 Zr—N Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002845 discoloration Methods 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 229910000702 sendust Inorganic materials 0.000 description 2
- -1 t(f Inorganic materials 0.000 description 2
- 229910020018 Nb Zr Inorganic materials 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Power Engineering (AREA)
- Compounds Of Iron (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Magnetic Heads (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明はＶＴＲ等の磁気ヘッド用軟磁性合金膜に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a soft magnetic alloy film for a magnetic head such as a VTR.
従来の技術
本発明者らは磁気ヘッド用磁性膜に適した第２図に示し
たような窒化層３と非窒化層４より成る組成変調窒化合
金膜を開発した（例えば、特願昭６１−５４０５４号、
特願昭６１−１９９６３１号、特願昭６２−８９４０２
号、および特願昭６２−１００４００号）。これらの組
成変調窒化合金膜とも呼ばれ、これを用いた磁気ヘッド
は従来にない優れた特性を示すことが確認されている。BACKGROUND OF THE INVENTION The present inventors have developed a compositionally modulated nitride alloy film consisting of a nitrided layer 3 and a non-nitrided layer 4, as shown in FIG. No. 54054,
Patent Application No. 1986-199631, Patent Application No. 1989-89402
No. 62-100400). These are also called composition-modulated nitride alloy films, and it has been confirmed that magnetic heads using them exhibit superior characteristics never seen before.
発明が解決しようとする課題
しかしながら上記のような窒化層と非窒化層より成る超
構造窒化合金膜はターゲットが１個しかないスパッタ装
置を用いる場合は有利であるが、反応スパッタ蒸着法で
作製するには蒸着中に適当な待時間を設けて窒素ガスを
周期的に蒸着室に導入する必要があり、この窒素ガス切
り替えの待ち時間が必要なため複数ターゲットを有し基
板を回転させて成膜する量産装置を用いる場合等の装置
の機種によっては成膜効率が悪くなる欠点があった。Problems to be Solved by the Invention However, although the superstructured nitride alloy film consisting of a nitrided layer and a non-nitrided layer as described above is advantageous when using a sputtering device with only one target, it cannot be produced by a reactive sputter deposition method. To do this, it is necessary to set up an appropriate waiting time during deposition and periodically introduce nitrogen gas into the deposition chamber. Because this waiting time is required to switch the nitrogen gas, it is necessary to have multiple targets and rotate the substrate to form a film. Depending on the model of the device, such as when a mass production device is used, there is a drawback that the film forming efficiency becomes poor.
課題を解決するための手段
上記課題を解決するべく本発明の超構造窒化合金膜は第
２図に示したような磁性窒化層３と磁性非窒化層４より
成るのではなく、第１図に示したような磁性窒化Ｎ１と
非磁性窒化層２より成る超構造窒化膜とし、膜形成は常
に窒素ガスを蒸着室に導入して行い、成膜効率の良い超
構造窒化合金膜としたものである。第１図において本発
明超構造窒化合金膜の磁性窒化層には次式でしめされた
組成を有する合金膜
Ｔ、、Ｍ、ＸｃＮ、、 ・＝・（１）を用いる
。ただしＴはＦｅ、 Ｃｏ、 Ｎｉより成る群から選択
された少なくとも１種の金属、ＭはＮｂ、 Ｚｒ。Means for Solving the Problems In order to solve the above problems, the superstructured nitride alloy film of the present invention does not consist of a magnetic nitride layer 3 and a magnetic non-nitride layer 4 as shown in FIG. A superstructured nitride film consisting of a magnetic nitride layer 1 and a nonmagnetic nitride layer 2 as shown was used, and the film was formed by constantly introducing nitrogen gas into the deposition chamber, resulting in a superstructured nitride alloy film with high film formation efficiency. be. In FIG. 1, the magnetic nitride layer of the superstructured nitride alloy film of the present invention is an alloy film T, , M, XcN, . . . = (1) having a composition expressed by the following formula. However, T is at least one metal selected from the group consisting of Fe, Co, and Ni, and M is Nb and Zr.
Ｔｉ、 Ｔａ、 ｔ（ｆ、 Ｃｒ、 Ｍｏ、 Ｈ，Ｍｎ
より成る群から選択された少なくとも１種の金属、Ｘは
Ｂ、 Ｓｔ、 Ｃ，Ａｌより成る群より選択された少な
くとも１種の半金属・半導体、ＮはＮ（窒素）であって
、ａ、 ｂ。Ti, Ta, t(f, Cr, Mo, H, Mn
at least one metal selected from the group consisting of; X is at least one metalloid/semiconductor selected from the group consisting of B, St, C, and Al; N is N (nitrogen); b.
ｃ、ｄは原子パーセントを表わし、それぞれ６０≦ａ≦
９３ ・・・（２）２≦ｂ≦２０
・・・（３）Ｏ≦ｃ≦１５
・・・（４）２≦ｄ≦３０
・・・（５）５≦ｂ＋ｃ ・
・・（６）ａ＋ｂ＋ｃ＋ｄ＝ １００ −（７）
である。又第１図において本発明超構造窒化合金膜の非
磁性窒化層には５ｉ−Ｎ、 Ｂ−Ｎ、 ＡＩ−Ｎ等の上
記磁性窒化層に拡散しにくい窒化物を用いる。c and d represent atomic percent, each 60≦a≦
93...(2) 2≦b≦20
...(3) O≦c≦15
...(4) 2≦d≦30
... (5) 5≦b+c ・
...(6) a+b+c+d=100-(7)
It is. Further, in FIG. 1, the non-magnetic nitride layer of the superstructured nitride alloy film of the present invention is made of a nitride, such as 5i-N, BN, AI-N, which is difficult to diffuse into the magnetic nitride layer.
作用
このような構成から成る本発明超構造窒化合金膜は高飽
和磁化で軟磁気特性、耐摩耗性、耐蝕性に優れ、従来に
比べてガス導入に際して待ち時間が不要なために量産性
の向上を可能とするものである。Effect The superstructured nitride alloy film of the present invention having such a configuration has high saturation magnetization, excellent soft magnetic properties, wear resistance, and corrosion resistance, and improves mass productivity because it does not require waiting time when introducing gas compared to conventional films. This makes it possible to
実施例
以下本発明の一実施例を図面を参照しながら説明するが
、それに先立って組成の限定条件についての説明をする
。EXAMPLE An example of the present invention will be described below with reference to the drawings, but prior to that, the limiting conditions of the composition will be explained.
（１）弐において合金膜が軟磁性を示すにはａ≦９３．
５≦ｂ ＋ ｃ ・”（８）である事が必要で
あり、合金膜が高飽和磁化を有するには
６０≦ａ、 ｂ≦２０．０≦２０ ・（９）である
事が望ましく、又耐摩耗、耐蝕性に優れた特性を有する
には
２≦ｂ、 ２≦ｄ、 ｃ≦１５ ・（１０）
である事が必要である事がわかった。更に合金膜の内部
応力を抑えて膜が基板より剥離しないためには
ｄ≦３０ ・・・０１
）である事が望ましい。なお（１）式でＸ元素は必ずし
も含む必要はないが熱処理後も積層構造が明確な超構造
窒化合金膜を得ようとする場合Ｘ元素の添加が有効であ
る。以上（８） −（Ｉ＋）式より（２） −（７）式
の条件式が得られた。なお膜作製中にガス配管や真空槽
壁よりの出ガスより不可避的に酸素が混入することがあ
るが、膜中の酸素含有両が３％以内であれば特性の劣化
はないが５％以上となると特性劣化が生じるので注意す
る必要がある。(1) In order for the alloy film to exhibit soft magnetism, a≦93.
It is necessary that 5≦b + c ・”(8), and in order for the alloy film to have high saturation magnetization, it is desirable that 60≦a, b≦20.0≦20 ・(9), and To have excellent wear resistance and corrosion resistance, 2≦b, 2≦d, c≦15 (10)
I found out that it is necessary. Furthermore, in order to suppress the internal stress of the alloy film and prevent the film from peeling off from the substrate, d≦30...01
) is desirable. Although it is not necessary to necessarily include element X in formula (1), addition of element X is effective when attempting to obtain a superstructured nitride alloy film with a clear layered structure even after heat treatment. The conditional expressions (2)-(7) were obtained from the above equations (8)-(I+). Note that during film fabrication, oxygen may be unavoidably mixed in from gas emitted from gas piping or the walls of the vacuum chamber, but if the oxygen content in the film is within 3%, there will be no deterioration in properties, but if the oxygen content is 5% or more. If this happens, characteristics will deteriorate, so care must be taken.
この窒化膜の軟磁気特性を更に改善するには、少なくと
も作製時において膜厚方向即ち成膜方向に組成変調され
た超構造窒化合金膜とすることが必要である。この場合
従来は（１）式の窒化層と（１）式で窒素を含まない非
窒化層を積層して超構造窒化合金膜としていたが、本発
明では（１）式の磁性窒化膜と５ｉ−Ｎ、 Ｂ−Ｎ、
ＡＩ−Ｎ等の非磁性窒化膜を積層することにより超構造
窒化合金膜として軟磁性を改善している。これらの非磁
性窒素膜は（１）式の磁性窒化膜との界面での拡散が生
じにくく、高温熱処理後もこの積層構造を安定化させ軟
磁気特性の安定性に寄与する効果がある。この場合（１
）弐の磁性窒化合金膜の膜厚をＬｌ、Ｉ、非磁性窒化膜
の膜厚をｔＮとするとき
ｔｓ、 ｔ Ｎ ＜１０００人 ・・・（
１２）とすると膜は優れた軟磁性を示すことがわかった
。In order to further improve the soft magnetic properties of this nitride film, it is necessary to create a superstructured nitride alloy film whose composition is modulated at least in the film thickness direction, that is, in the film formation direction. In this case, conventionally, a superstructure nitride alloy film was obtained by laminating a nitride layer of formula (1) and a non-nitride layer containing no nitrogen according to formula (1), but in the present invention, a magnetic nitride film of formula (1) and a 5i -N, B-N,
By laminating non-magnetic nitride films such as AI-N, soft magnetism is improved as a superstructure nitride alloy film. These non-magnetic nitrogen films are less likely to cause diffusion at the interface with the magnetic nitride film of formula (1), and have the effect of stabilizing this laminated structure even after high-temperature heat treatment and contributing to the stability of soft magnetic properties. In this case (1
) When the film thickness of the second magnetic nitride alloy film is Ll, I, and the film thickness of the non-magnetic nitride film is tN, ts, t N <1000 people...(
12), the film showed excellent soft magnetism.
又膜全体として高飽和磁化を有するには１．５１００人
・・・面
とすることが必要である。In order for the film as a whole to have high saturation magnetization, it is necessary to have a surface of 1.5100 .
つぎに従来例と対比しながら本発明の詳細な説明を行な
う。Next, the present invention will be explained in detail in comparison with a conventional example.
実施例１
ターゲットにＣｏ５ＪｂｌｏＺｒ４及びＦｅｔｌｌＮｂ
Ｊ＋ ｓ合金板を用い、スパッタ中にＡｒガス中にＮ２
ガスを周期的に混合することによりＧｏ−Ｎｂ−Ｚｒ／
Ｃｏ−Ｎｂ−Ｚｒ−Ｎ及びＦｅ−Ｎｂ−Ｂ／Ｆｅ−Ｎｂ
−Ｂ−Ｎなる非窒化層と窒化層より成る総厚８μｍ、
１層の層厚が前者は２００人、後者は１００人の超構
造窒化合金膜を単結晶Ｍｎ−Ｚｎフェライト基板上に作
製した。この時窒素ガス切り替えの待ち時間ｔを１０秒
と２０秒の２種類の場合について行なった。次に同上の
ターゲットとＳｔジターットの２個のターゲットを用い
、スパッタ中に基板を２個のターゲット上に交互に移動
しＡｒガス中にＮ２ガスを常に混合して（即ちガス切り
替えの待ち時間１＝０で）スパッタすることによりＣｏ
−Ｎｂ−Ｚｒ−Ｎ／５ｉ−Ｎ、 Ｆｅ−Ｎｂ−Ｂ−Ｎ／
５ｉ−Ｎなる総厚８μｍ、１層の層厚が前者は磁性層２
００人、非磁性層５０人、後者は磁性層１００人、非磁
性層２０人の超構造窒化合金膜を作製した。以上の実験
では導入Ｎ２ガスの混合分圧比は１０％とした。第１表
にこれらの膜作製に要した時間Ｔ、及び得られた各種超
構造窒化合金膜の５５０°Ｃ熱処理後の保磁力ｌ（ｃを
示した。Example 1 Co5JbloZr4 and FellNb as targets
Using a J+s alloy plate, N2 was added to Ar gas during sputtering.
By periodically mixing gases, Go-Nb-Zr/
Co-Nb-Zr-N and Fe-Nb-B/Fe-Nb
- A total thickness of 8 μm consisting of a non-nitrided layer and a nitrided layer of B-N,
A superstructured nitride alloy film having a layer thickness of 200 layers for the former and 100 layers for the latter was fabricated on a single-crystal Mn--Zn ferrite substrate. At this time, two cases were conducted in which the waiting time t for nitrogen gas switching was 10 seconds and 20 seconds. Next, using two targets, the same target and the St target, the substrate is alternately moved onto the two targets during sputtering, and N2 gas is constantly mixed in Ar gas (i.e., the waiting time for gas switching is 1). = 0) by sputtering Co
-Nb-Zr-N/5i-N, Fe-Nb-B-N/
The total thickness of 5i-N is 8 μm, and the thickness of one layer is the magnetic layer 2.
A superstructured nitride alloy film was fabricated with 00 layers, a non-magnetic layer with 50 layers, and the latter with a magnetic layer of 100 layers and a non-magnetic layer of 20 layers. In the above experiment, the mixed partial pressure ratio of the introduced N2 gas was set to 10%. Table 1 shows the time T required to prepare these films and the coercive force l(c) of the obtained various superstructure nitride alloy films after heat treatment at 550°C.
表に従来例と対比して示したように本発明超構造窒化合
金膜は従来の超構造窒化合金膜と同等の軟磁性を示し、
作製に要する時間Ｔが従来の超構造窒化合金膜に比べて
大幅に短縮されることがわかる。As shown in the table in comparison with the conventional example, the superstructured nitride alloy film of the present invention exhibits soft magnetism equivalent to that of the conventional superstructured nitride alloy film,
It can be seen that the time T required for fabrication is significantly shortened compared to the conventional superstructured nitride alloy film.
以下余白
第１表
ガラス基板上に形成した。総膜厚はすべて８μｍとし、
各層厚はスパッタ時間を変化することにより、又窒素含
有量はＮ２ガスの混合分圧比を変化することにより制御
し、膜中の含有量はＲＢＳ（Ｒｕｔｈｅｒｆｏｒｄ Ｂ
ａｃｋ Ｓｃａｔｔｅｒｉｎｇ）により定量した。得ら
れた膜の５５０°Ｃ熱処理後の緒特性を第２表に示した
。The following margins were formed on the first front glass substrate. The total film thickness is all 8μm,
The thickness of each layer is controlled by changing the sputtering time, the nitrogen content is controlled by changing the mixture partial pressure ratio of N2 gas, and the content in the film is controlled by RBS (Rutherford B
ack scattering). Table 2 shows the properties of the obtained film after heat treatment at 550°C.
第２表
実施例２
一方のターゲットにＦｅ５Ｊｂ＋ｚ＋ ＦｅｑＪｂ＋ｚ
Ｓｉａ＋ＦｅｅｏＮｉＪＪｂ＋ｏＡ１ｚ、 ＣＯｑ＋Ｎ
ｂｂＨｆ：＋＋ ＣＯ５７ＴｉＩＴａＪａ、 Ｃ。Table 2 Example 2 Fe5Jb+z+ FeqJb+z on one target
Sia+FeeoNiJJb+oA1z, COq+N
bbHf:++ CO57TiITaJa, C.
８゜Ｍｏ６ＣｒｚＺｒＩｏより１種を用い、もう一方の
ターゲットに５ｉ−Ｎ、 Ｂ−Ｎ、 Ａｌ−Ｎより１種
を用いて実施例１と同様の方法で磁性窒化層と非磁性層
より成る超構造窒化合金膜を反応スパッタ法により感光
性第２表の実験結果よりわかるように得られた膜は高飽
和磁化で軟磁性を示す。A superstructure consisting of a magnetic nitride layer and a nonmagnetic layer was prepared in the same manner as in Example 1 using one type of 8゜Mo6CrzZrIo and one type of 5i-N, BN, and Al-N for the other target. Photosensitivity As can be seen from the experimental results in Table 2, the film obtained by reactive sputtering of the nitride alloy film exhibits soft magnetism with high saturation magnetization.
実施例３
実施例１．実施例２の第１表、第２表に示した超構造窒
化合金膜を純水に４８時間浸して変色具合いを調べたと
ころすべての膜はなんら変色することなく優れた耐蝕性
を示すことがわかった。又これらの膜と通常のスパッタ
法で作製したＰｅ−５ｉ−ＡＩ（センダスト）合金膜と
をダミーへラドチップ形状に加工し市販のＶＴＲデツキ
とテープを用いて摩耗試験を行い、本発明の超構造窒化
合金膜がセンダスト合金膜の１．５倍〜３倍の耐摩耗性
を示すことがわかった。Example 3 Example 1. When the superstructured nitride alloy films shown in Tables 1 and 2 of Example 2 were immersed in pure water for 48 hours and the degree of discoloration was examined, all films showed excellent corrosion resistance without any discoloration. Understood. Furthermore, these films and a Pe-5i-AI (Sendust) alloy film prepared by a conventional sputtering method were processed into a dummy Radchip shape and subjected to an abrasion test using a commercially available VTR deck and tape. It was found that the nitride alloy film exhibits wear resistance 1.5 to 3 times that of the Sendust alloy film.
発明の効果
以上実施例等により述べたように本発明は高飽和磁化を
有し耐摩耗性・耐蝕性と量産性に優れた磁気ヘッド用軟
磁性合金膜を高い製膜速度で得る事を可能にするもので
ある。Effects of the Invention As described above with examples, the present invention makes it possible to obtain a soft magnetic alloy film for magnetic heads with high saturation magnetization, excellent wear resistance, corrosion resistance, and mass productivity at a high film forming rate. It is something to do.
第１図は本発明の磁性窒化層と非磁性窒化層より成る超
構造窒化合金膜の構成図、第２図は従来の窒化磁性層と
非窒化磁性層より成る超構造窒化合金膜の構成図である
。
１・・・・・・磁性窒化層（Ｔ−Ｍ−（Ｘ）−Ｎ） 、
２・・・・・・非磁性窒化層、３・・・・・・窒化磁性
層、４・・・・・・非窒化磁性層、５・・・・・・基板
。Fig. 1 is a block diagram of a superstructured nitride alloy film consisting of a magnetic nitride layer and a non-magnetic nitride layer according to the present invention, and Fig. 2 is a block diagram of a conventional superstructure nitride alloy film composed of a nitrided magnetic layer and a non-nitrided magnetic layer. It is. 1...Magnetic nitride layer (T-M-(X)-N),
2...Nonmagnetic nitrided layer, 3...Nitrided magnetic layer, 4...Nonnitrided magnetic layer, 5...Substrate.
Claims (2)
膜とを積層して成る事を特徴とする超構造窒化合金膜。 （ただしＴはＦｅ，Ｃｏ，Ｎｉより成る群から選択され
た少なくとも１種の金属、ＭはＮｂ，Ｚｒ，Ｔｉ，Ｔａ
，Ｈｆ，Ｃｒ，Ｍｏ，Ｗ，Ｍｎより成る群から選択され
た少なくとも１種の金属、ＸはＢ，Ｓｉ，Ｃ，Ａｌより
成る群より選択された少なくとも１種の半金属・半導体
、ＮはＮ（窒素）であって、ａ，ｂ，ｃ，ｄは原子パー
セントを表わし、それぞれ６０≦ａ≦９３，２≦ｂ≦２
０，０≦ｃ≦１５，２≦ｄ≦３０，５≦ｂ＋ｃ，ａ＋ｂ
＋ｃ＋ｄ＝１００である。）(1) A superstructured nitride alloy film characterized by laminating a magnetic nitride alloy film T_aM_bX_cN_d expressed by the following formula and a nonmagnetic nitride film of Si-N, B-N, or Al-N. . (However, T is at least one metal selected from the group consisting of Fe, Co, and Ni, and M is Nb, Zr, Ti, Ta.
, Hf, Cr, Mo, W, and Mn, X is at least one metalloid/semiconductor selected from the group consisting of B, Si, C, and Al, and N is N (nitrogen), a, b, c, d represent atomic percent, 60≦a≦93, 2≦b≦2, respectively
0, 0≦c≦15, 2≦d≦30, 5≦b+c, a+b
+c+d=100. )
の膜厚をｔＮとするとき、ｔＭ≦１０００Å，ｔ＿Ｎ≦
１００Åであることを特徴とする請求項（１）記載の超
構造窒化合金膜。(2) In particular, when the film thickness of the magnetic nitride alloy film is tM and the film thickness of the non-magnetic nitride film is tN, tM≦1000Å, t_N≦
The superstructured nitride alloy film according to claim 1, wherein the film has a thickness of 100 Å.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26239989A JPH03124005A (en) | 1989-10-06 | 1989-10-06 | Superstructure nitride alloy film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26239989A JPH03124005A (en) | 1989-10-06 | 1989-10-06 | Superstructure nitride alloy film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03124005A true JPH03124005A (en) | 1991-05-27 |
Family
ID=17375233
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26239989A Pending JPH03124005A (en) | 1989-10-06 | 1989-10-06 | Superstructure nitride alloy film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03124005A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0620835A (en) * | 1991-11-28 | 1994-01-28 | Amorphous Denshi Device Kenkyusho:Kk | Amorphous magnetic thin film |
| US5589221A (en) * | 1994-05-16 | 1996-12-31 | Matsushita Electric Industrial Co., Ltd. | Magnetic thin film, and method of manufacturing the same, and magnetic head |
| CN1305215C (en) * | 2005-06-20 | 2007-03-14 | 清华大学 | High-frequency sound surface wave device emtal alloy film with electromigration-resistance |
| JP2008039080A (en) * | 2006-08-07 | 2008-02-21 | Nok Corp | Sealing system |
| CN103643085A (en) * | 2013-11-13 | 2014-03-19 | 中国科学院深圳先进技术研究院 | Embedded film resistor material and its preparation method |
| CN110117738A (en) * | 2019-05-09 | 2019-08-13 | 西北工业大学 | DO can be precipitated22The Ni-Cr-W-Nb high temperature alloy of type Superlattice Phase |
-
1989
- 1989-10-06 JP JP26239989A patent/JPH03124005A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0620835A (en) * | 1991-11-28 | 1994-01-28 | Amorphous Denshi Device Kenkyusho:Kk | Amorphous magnetic thin film |
| JPH07114165B2 (en) * | 1991-11-28 | 1995-12-06 | 株式会社アモルファス・電子デバイス研究所 | Amorphous magnetic thin film |
| US5589221A (en) * | 1994-05-16 | 1996-12-31 | Matsushita Electric Industrial Co., Ltd. | Magnetic thin film, and method of manufacturing the same, and magnetic head |
| US5849400A (en) * | 1994-05-16 | 1998-12-15 | Matsushita Electric Industrial Co., Ltd. | Magnetic thin film, and method of manufacturing the same, and magnetic head |
| CN1305215C (en) * | 2005-06-20 | 2007-03-14 | 清华大学 | High-frequency sound surface wave device emtal alloy film with electromigration-resistance |
| JP2008039080A (en) * | 2006-08-07 | 2008-02-21 | Nok Corp | Sealing system |
| CN103643085A (en) * | 2013-11-13 | 2014-03-19 | 中国科学院深圳先进技术研究院 | Embedded film resistor material and its preparation method |
| CN103643085B (en) * | 2013-11-13 | 2015-09-30 | 中国科学院深圳先进技术研究院 | Embed type film resistor material and preparation method thereof |
| CN110117738A (en) * | 2019-05-09 | 2019-08-13 | 西北工业大学 | DO can be precipitated22The Ni-Cr-W-Nb high temperature alloy of type Superlattice Phase |
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