JPH03265105A - Soft magnetic laminate film - Google Patents
Soft magnetic laminate filmInfo
- Publication number
- JPH03265105A JPH03265105A JP2063809A JP6380990A JPH03265105A JP H03265105 A JPH03265105 A JP H03265105A JP 2063809 A JP2063809 A JP 2063809A JP 6380990 A JP6380990 A JP 6380990A JP H03265105 A JPH03265105 A JP H03265105A
- Authority
- JP
- Japan
- Prior art keywords
- soft magnetic
- magnetic alloy
- crystal grains
- layer
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 87
- 239000005001 laminate film Substances 0.000 title 1
- 229910001004 magnetic alloy Inorganic materials 0.000 claims abstract description 48
- 239000013078 crystal Substances 0.000 claims abstract description 45
- 239000000203 mixture Substances 0.000 claims abstract description 27
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 9
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 8
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 8
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 8
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 7
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 7
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 7
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 239000000470 constituent Substances 0.000 claims description 2
- 230000004907 flux Effects 0.000 abstract description 26
- 229910052751 metal Inorganic materials 0.000 abstract description 11
- 239000002184 metal Substances 0.000 abstract description 11
- 230000035699 permeability Effects 0.000 abstract description 5
- 238000010030 laminating Methods 0.000 abstract description 3
- 150000002739 metals Chemical class 0.000 abstract 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 37
- 238000010438 heat treatment Methods 0.000 description 17
- 239000000758 substrate Substances 0.000 description 14
- 238000004544 sputter deposition Methods 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 9
- 239000011521 glass Substances 0.000 description 9
- 238000003466 welding Methods 0.000 description 9
- 229910052742 iron Inorganic materials 0.000 description 7
- 239000008188 pellet Substances 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 230000005389 magnetism Effects 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910017112 Fe—C Inorganic materials 0.000 description 3
- 230000002411 adverse Effects 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- -1 N b Inorganic materials 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000013081 microcrystal Substances 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 229910000702 sendust Inorganic materials 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229910017086 Fe-M Inorganic materials 0.000 description 1
- 229910017082 Fe-Si Inorganic materials 0.000 description 1
- 229910017133 Fe—Si Inorganic materials 0.000 description 1
- 229910000713 I alloy Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
この発明は、磁気ヘッド等に適した飽和磁束密度の高い
軟磁性積層膜に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a soft magnetic laminated film with a high saturation magnetic flux density suitable for magnetic heads and the like.
［従来の技術］
磁気記録の分野においては、記録密度を高ぬるために磁
気テープ等の記録媒体の高保磁力化が推進されているが
、それに対応する磁気ヘッドの材料として飽和磁束密度
（Ｂ ｓ）の高いものが要求されている。[Prior Art] In the field of magnetic recording, in order to increase the recording density, the coercive force of recording media such as magnetic tapes is being promoted. ) is required.
従来の高飽和磁束密度の軟磁性材料（膜）として、Ｆ
ｅ−Ｓ ｉ−Ａ Ｉ合金（センダスト）が代表的なもの
であるが、近年、強磁性金属元素であるＣｏを主体とす
る非晶質の合金膜が開発されている。As a conventional soft magnetic material (film) with high saturation magnetic flux density, F
The e-S i-A I alloy (Sendust) is a typical example, but in recent years, amorphous alloy films mainly composed of Co, a ferromagnetic metal element, have been developed.
また最近の試みとして、Ｆｅを主成分とする微細結晶か
らなる合金膜（Ｆ ｅ−Ｃ、Ｆ ｅ−Ｓ ｉ等）により
、Ｆｅの結晶磁気異方性の影響（軟磁性に対する悪影響
）を結晶の微細化により軽減し、高飽和磁束密度でかつ
軟磁気特性の優れた膜を得た例がある。In addition, recent attempts have been made to reduce the effects of Fe's magnetocrystalline anisotropy (adverse effect on soft magnetism) by using alloy films (Fe-C, Fe-Si, etc.) consisting of fine crystals containing Fe as the main component. There is an example in which a film with high saturation magnetic flux density and excellent soft magnetic properties was obtained by reducing the magnetic flux by miniaturization.
［発明が解決しようとする課題］
ところで、磁気ヘッドを組み込んだ装置は小型化、軽量
化する傾向にあり、移動に伴う振動にさらされたり、悪
環境のもとで使用されたりすることが多くなっている。[Problem to be solved by the invention] Incidentally, devices incorporating magnetic heads tend to be smaller and lighter, and are often exposed to vibrations caused by movement or used in adverse environments. It has become.
そこで、磁気ヘッドには、磁気特性が優秀であって磁気
テープに対する耐摩耗性が優れていることは勿論、湿度
や腐食性の雰囲気中での耐用性、すなわち耐環境性や、
耐振動性等が高いことが要求されている。そのため、ギ
ャップ形成やケースへの組み込み等をガラス溶着で行う
ことが必要となり、磁気ヘッドの素材はヘッドの製造工
程におけるガラス溶着工程の高温に耐え得ることが必要
である。Therefore, magnetic heads must not only have excellent magnetic properties and wear resistance against magnetic tape, but also durability in humid and corrosive atmospheres, that is, environmental resistance.
High vibration resistance is required. Therefore, it is necessary to perform gap formation, assembly into a case, etc. by glass welding, and the material of the magnetic head needs to be able to withstand the high temperatures of the glass welding process in the head manufacturing process.
しかしながら、前記従来の軟磁性合金膜において、セン
ダストからなるものは、飽和磁束密度が約１００００Ｇ
（ガウス）程度であり、今後−層の高密度化の要求に対
しては不充分である。また、Ｃｏ系のアモルファス合金
膜では１３０００Ｇ以上の高い飽和磁束密度のものも得
られているが、従来のアモルファス合金の飽和磁束密度
を高くしようとすると、アモルファス形成元素であるＴ
ｉ。However, among the conventional soft magnetic alloy films, those made of sendust have a saturation magnetic flux density of about 10,000G.
(Gauss), which is insufficient to meet future demands for higher density layers. In addition, some Co-based amorphous alloy films have a high saturation magnetic flux density of 13,000 G or more, but when trying to increase the saturation magnetic flux density of conventional amorphous alloys, the amorphous forming element T
i.
Ｚｒ、Ｈｆ、Ｎｂ、Ｔａ、Ｍｏ、Ｗ等の添加量を少なく
する必要があるが、添加量を少なくすると、アモルファ
ス構造の安定性が低下し、ガラス溶着に必要な温度（約
５００℃以上）には耐え得ない問題がある。It is necessary to reduce the amount of Zr, Hf, Nb, Ta, Mo, W, etc. added, but if the amount added is reduced, the stability of the amorphous structure will decrease, and the temperature required for glass welding (approximately 500°C or higher) will decrease. has an intolerable problem.
更に、上述したＦｅを主成分とする微細結晶からなる合
金膜（Ｆ ｅ−Ｃ、Ｆ ｅ−９ｉ等）は、高温で結晶成
長を起こし、軟磁気特性が劣化する（Ｆｅ−Ｃの場合、
４００℃が最高）ために、やはりガラス溶着に適したも
のとは言い難い。Furthermore, the alloy films (Fe-C, Fe-9i, etc.) made of fine crystals mainly composed of Fe described above undergo crystal growth at high temperatures, resulting in deterioration of soft magnetic properties (in the case of Fe-C,
400° C.), it is difficult to say that it is suitable for glass welding.
このような背景から本願発明者らは、特願平ｌ−２７８
２２０号などにおいて、前記の問題を解決した軟磁性合
金膜を特許出願している。Against this background, the inventors of the present invention have proposed patent application No. 1-278
No. 220, etc., patent applications have been filed for soft magnetic alloy films that solve the above-mentioned problems.
特願平１−２７８２２０号明細書において特許出願して
いる軟磁性合金膜の１つは、組成式が、Ｆｅｘ ＭｚＣ
ｗで示され、組成比Ｘは原子％で５０〜９６、Ｚは２〜
３０１．は０．５〜２５、Ｘ＋ｚ 十ｗ ＝ １００な
る関係を満足するものであった。One of the soft magnetic alloy films for which a patent application has been filed in Japanese Patent Application No. 1-278220 has a composition formula of Fex MzC.
It is represented by w, the composition ratio X is 50 to 96 atomic %, and Z is 2 to 96.
301. was 0.5 to 25, satisfying the relationship: X+z 10w=100.
また、他の１つは、組成式が、ＦｅｘＴｙＭｚＣＷで示
され、組成比Ｘは原子％で５θ〜９６、ｙは０．１−１
０．２は２〜３０１．は０．５〜２５、Ｘ ＋ ｙ ＋
ｚ ＋ ’ｗ ＝ １００なる関係を満足するもので
あった。The other one has a compositional formula of FexTyMzCW, where the compositional ratio X is 5θ~96 in atomic % and y is 0.1-1.
0.2 is 2-301. is 0.5 to 25, X + y +
The relationship z + 'w = 100 was satisfied.
この特許出願で提供した軟磁性合金膜は、一部組酸のも
のは１８０００Ｇ程度の高い飽和磁束密度を有し、従来
の各種材料に比較すると高い熱安定性を備え、十分な耐
食性と耐環境性を有しているものであった。ところが、
この軟磁性合金膜では、飽和磁束密度２００００Ｇ前後
のものは得られず、特に高い記録特性が要求される磁気
ヘッド用としては対応できない問題があった。The soft magnetic alloy film provided in this patent application has a high saturation magnetic flux density of about 18,000G in the case of partially assembled acid, has higher thermal stability than various conventional materials, and has sufficient corrosion resistance and environmental resistance. It had a sexual nature. However,
With this soft magnetic alloy film, a saturation magnetic flux density of around 20,000 G cannot be obtained, and there is a problem that it cannot be used as a magnetic head that requires particularly high recording characteristics.
本発明は上述の問題点を解決し、軟磁気特性に優れ、そ
の特性が熱的に安定であり、信頼性の高いガラス溶着が
できるとともに、２００００Ｇ前後の高い飽和磁束密度
を示し、無磁場熱処理によっても十分に高い磁気特性を
得ることができる軟磁性積層膜を提供することを目的と
するものである。The present invention solves the above-mentioned problems, has excellent soft magnetic properties, is thermally stable, can perform highly reliable glass welding, exhibits a high saturation magnetic flux density of around 20,000G, and is heat treated in a non-magnetic field. The object of the present invention is to provide a soft magnetic laminated film that can obtain sufficiently high magnetic properties even when
［課題を解決するための手段〕
請求項１に記載した発明は前記課題を解決するために、
ＦｅｚＭｚＣｖｙなる組成式で示される軟磁性合金層と
Ｆｅ層とが交互に積層されてなり、前記軟磁性合金層は
全体が平均粒径０．０８μｍ以下の微細な結晶粒からな
り、微細結晶粒の一部に元素Ｍの炭化物の結晶相を含む
ことを特徴とするものである。ただし前記組成式におい
てＭはＴｉＺ ｒ、Ｈｆ、Ｖ 、Ｎ ｂ、Ｔ ａ、Ｍｏ
、Ｗのうち、少なくとも１種からなる金属元素又はその
混合物であり、組成比Ｘ 、Ｚ 、ｗは原子％で５０≦
ｘ≦９６．２≦２≦３０．０．５≦７≦２５、ｘ＋ｚ＋
ｗ＝１００なる関係を満足するものとする。[Means for solving the problem] In order to solve the problem, the invention described in claim 1 has the following features:
Soft magnetic alloy layers shown by the composition formula FezMzCvy and Fe layers are alternately laminated, and the soft magnetic alloy layer is entirely composed of fine crystal grains with an average grain size of 0.08 μm or less. It is characterized by partially containing a crystalline phase of carbide of element M. However, in the above compositional formula, M is TiZ r, Hf, V , N b, Ta, Mo
, W, or a mixture thereof, and the composition ratios X, Z, and w are 50≦at.%.
x≦96.2≦2≦30.0.5≦7≦25, x+z+
It is assumed that the relationship w=100 is satisfied.
請求項２に記載した発明は前記課題を解決するためｌこ
’、ＦｅｘＴｙＭｚＣｗなる組成式で示される軟磁性合
金層とＦｅ層とが交互に積層されてなり、前記軟磁性合
金層は全体か平均粒径０．０８μｍ以下の微細な結晶粒
、９らなり、微細結晶粒の一部に元素Ｍの炭化物の結晶
相を含むものである。In order to solve the above-mentioned problem, the invention as set forth in claim 2 has a structure in which soft magnetic alloy layers represented by the composition formula FexTyMzCw and Fe layers are alternately laminated, and the soft magnetic alloy layer is formed by laminating the entire or average layer. It consists of 9 fine crystal grains with a grain size of 0.08 μm or less, and a part of the fine crystal grains contains a crystal phase of carbide of element M.
ただし前記組成式において、ＭはＴｉ、Ｚｒ、Ｈｆ、Ｖ
Ｎｂ、Ｔａ、Ｍｏ、Ｗのうち、少なくとも１種からなる
金属元素又はその混合物、ＴはＣｏ、Ｎｉのうち、少な
くとも１種を示し、組成比Ｘ 、）’ 、Ｚ 、ｗは原
子％で５０≦ｘ≦９６．０．１≦ｙ≦２０．２≦２≦３
０．０．５≦ｗ≦２５、ｘ＋Ｚ＋、−１００なる関係を
満足するものとする。However, in the above compositional formula, M is Ti, Zr, Hf, V
A metal element or a mixture thereof consisting of at least one of Nb, Ta, Mo, and W, T represents at least one of Co and Ni, and the composition ratios X, )', Z, and w are 50 at %. ≦x≦96.0.1≦y≦20.2≦2≦3
It is assumed that the following relationships are satisfied: 0.0.5≦w≦25, x+Z+, -100.
請求項３に記載した発明は前記課題を解決するために、
請求項１または２に記載の軟磁性合金層が平均結晶粒径
０．０８μｍ以下の微細な結晶粒と非晶質相との混在し
た組織を有し、微細結晶粒の一部に元素Ｍの炭化物の結
晶相を含むものである。In order to solve the above problem, the invention described in claim 3 has the following features:
The soft magnetic alloy layer according to claim 1 or 2 has a structure in which fine crystal grains with an average crystal grain size of 0.08 μm or less and an amorphous phase are mixed, and a part of the fine crystal grains contains element M. It contains a carbide crystal phase.
請求項４に記載した発明は前記課題を解決するために、
請求項１，２または３に記載したＦｅ層と軟磁性合金層
との界面において、軟磁性合金層の構成元素の濃度勾配
をつけてなるものである。In order to solve the above problem, the invention described in claim 4 has the following features:
At the interface between the Fe layer and the soft magnetic alloy layer according to claim 1, 2 or 3, a concentration gradient of the constituent elements of the soft magnetic alloy layer is provided.
以下に本発明を更に詳細に説明する。The present invention will be explained in more detail below.
第１図は本発明の軟磁性積層膜の一実施例を示すもので
、この実施例の積層膜１は、基板２の上に、純鉄からな
るＦｅ層３と、Ｆｅ−Ｍ−Ｃ系あるいはＦ ｅ−Ｔ −
Ｎ−Ｃ系の軟磁性合金層４とを交互に積層してなるもの
である。なお、積層膜１においてその最上部には軟磁性
合金膜４が形成されている。FIG. 1 shows an embodiment of the soft magnetic laminated film of the present invention. The laminated film 1 of this embodiment has an Fe layer 3 made of pure iron on a substrate 2, and an Fe layer 3 made of pure iron, and an Fe-M-C based Or Fe-T-
It is formed by alternately laminating NC-based soft magnetic alloy layers 4. Note that a soft magnetic alloy film 4 is formed at the top of the laminated film 1.
また、前記積層膜１の厚さ方向の濃度分布は第２図に示
すようになっている。Further, the concentration distribution in the thickness direction of the laminated film 1 is as shown in FIG.
前記軟磁性合金層４の一例は、ｐｅｘＭｚＣｗなる組成
式で示され、全体が平均粒径０．０８μ印以下の微細な
結晶粒からなり、微細結晶粒の一部に元素Ｍの炭化物の
結晶相を含むものである。ただし前記組成式においてＭ
はＴｉ、Ｚｒ、Ｈｆ、Ｖ 、ＮｂＴ ａ、Ｍｏ、Ｗのう
ち、少なくとも１種からなる金属元素又はその混合物で
あり、組成比ｘ 、ｚ 、ｗは原子％で５０≦ｘ≦９６
．２≦Ｚ≦３０，０．５≦ｗ≦２５、ｘ ＋ ｚ ＋
ｗ ＝ １００なる関係を満足するものとする。An example of the soft magnetic alloy layer 4 is represented by the composition formula pexMzCw, and is entirely composed of fine crystal grains with an average grain size of 0.08 μm or less, and a portion of the fine crystal grains includes a crystal phase of carbide of element M. This includes: However, in the above compositional formula, M
is a metal element consisting of at least one of Ti, Zr, Hf, V, NbTa, Mo, and W, or a mixture thereof, and the composition ratios x, z, and w are 50≦x≦96 in atomic %.
．． 2≦Z≦30, 0.5≦w≦25, x + z +
It is assumed that the relationship w = 100 is satisfied.
また、前記軟磁性合金層４の他の１つの例は、ＦｅｘＴ
ｙＭｚＣｗなる組成式で示され、全体が平均粒径０，０
８μｍ以下の微細な結晶粒からなり、微細結晶粒の一部
に元素Ｍの炭化物の結晶相を含むものである。ただし前
記組成式において、ＭはＴｉ、Ｚｒ、Ｈｆ、Ｖ、Ｎｂ、
Ｔａ、Ｍｏ、Ｗのうち、少なくとも１種からなる金属元
素又はその混合物、ＴはＧｏ、Ｎｉのうち、少なくとも
１種を示し、組成比Ｘ 、１／ 、Ｚ ＋Ｗは原子％で
５０≦ｘ≦９６．０．１≦ｙ≦２０．２≦２≦３０．０
．５≦ｗ≦２５．８十ｚ ＋ ｗ ＝ Ｉ ００なる関
係を満足するものとする。Further, another example of the soft magnetic alloy layer 4 is FexT
It is represented by the composition formula yMzCw, and the entire average particle size is 0.0.
It consists of fine crystal grains of 8 μm or less, and includes a crystal phase of carbide of element M in a part of the fine crystal grains. However, in the above compositional formula, M is Ti, Zr, Hf, V, Nb,
A metal element or a mixture thereof consisting of at least one of Ta, Mo, and W, T represents at least one of Go and Ni, and the composition ratio X, 1/, Z + W is 50≦x≦ in atomic % 96.0.1≦y≦20.2≦2≦30.0
．． It is assumed that the relationship 5≦w≦25.80z+w=I00 is satisfied.
前記軟磁性積層膜を成膜する方法としては、スパッタ、
蒸着等のＨＭ形成装置により作製する。Methods for forming the soft magnetic laminated film include sputtering,
It is produced using an HM forming apparatus such as vapor deposition.
スパッタ装置としては、ＲＦ２極スパッタ、ＤＣスパッ
タ、マグネトロンスパッタ、３極スパツタ、イオンビー
ムスパッタ、対向ターゲット式スパッタ、等の既存のも
のを使用することができるが、同一真空槽内に２基以上
のターゲットを装着可能で、真空を破らずに多層膜の作
製が可能な形式の装置を用いることか好ましい。Existing sputtering equipment such as RF two-pole sputtering, DC sputtering, magnetron sputtering, three-pole sputtering, ion beam sputtering, and facing target sputtering can be used, but two or more sputtering equipment can be used in the same vacuum chamber. It is preferable to use an apparatus to which a target can be attached and which can produce a multilayer film without breaking the vacuum.
第３図は前記積層膜１を製造する場合に用いて好適な成
膜装置の一例を示すもので、図中５は支持軸６によって
回転自在支持された基板ホルダ、７．８は基板ホルダ５
の上方に設けられたカソードであって、カソード７．８
の間には隔壁９が設けられ、装置全体が図示路の真空容
器に収納されている。そして、基板ホルダ５の上面には
基板ｌＯが設置されるとともに、カソード７の下面には
純鉄製のターゲット１１が設けられ、カソード８の下面
にはグラファイト板などのベレット１２とＨｆなどの元
素Ｍからなるベレット１３とを備えた純鉄製のターゲッ
ト１４が設けられている。FIG. 3 shows an example of a film forming apparatus suitable for manufacturing the laminated film 1. In the figure, 5 is a substrate holder rotatably supported by a support shaft 6, and 7.8 is a substrate holder 5.
a cathode provided above the cathode 7.8;
A partition wall 9 is provided between them, and the entire device is housed in a vacuum container along the path shown. A substrate lO is installed on the upper surface of the substrate holder 5, a target 11 made of pure iron is provided on the lower surface of the cathode 7, and a pellet 12 such as a graphite plate and an element M such as Hf are provided on the lower surface of the cathode 8. A target 14 made of pure iron is provided with a pellet 13 made of.
前記構成の装置によって積層膜ｌを形成するには、両方
のカソード７．８でスパッタを行って各ターゲットから
スパッタ粒子を発生させるとともｊこ、基板ホルダ５を
所定時間毎に１８０°回転させて基板ＩＯをカソード７
の下方側とカソード８の下方側の両方を交互に往来させ
ることによって行う。In order to form the laminated film l using the apparatus having the above configuration, sputtering is performed with both cathodes 7 and 8 to generate sputtered particles from each target, and the substrate holder 5 is rotated 180 degrees at predetermined intervals. Connect the board IO to cathode 7
This is done by alternately moving both the lower side of the cathode 8 and the lower side of the cathode 8 back and forth.
以上の操作によって基板ｌＯの上には、カソード７から
スパッタされた粒子によってＦｅ層３が形成され、カソ
ード８からスパッタされた粒子によって軟磁性合金層４
が形成され、この繰り返しによって第１図に示す積層膜
Ｉが形成される。Through the above operations, an Fe layer 3 is formed on the substrate IO by particles sputtered from the cathode 7, and a soft magnetic alloy layer 4 is formed by particles sputtered from the cathode 8.
is formed, and by repeating this process, a laminated film I shown in FIG. 1 is formed.
基板ホルダ５の交互回転によって基板ｌ上に所定の厚さ
の積層膜１を形成したならば、成膜操作を停止する。Once the laminated film 1 of a predetermined thickness is formed on the substrate l by alternately rotating the substrate holder 5, the film forming operation is stopped.
このようにして作製したままの積層膜ｌにおける各軟磁
性合金層［Ｆ ｅ−（Ｔ ）−Ｍ−Ｃ膜］は、一応の軟
磁気特性を示すが、これらの軟磁性合金膜はアモルファ
ス相をかなりの割合で含んだものであり、飽和磁束密度
が十分には高くなく、軟磁気特性も十分ではなく、不安
定であるので、４００〜７００℃程度に加熱する熱処理
を施すことによって微細結晶を析出させる。そして、こ
の熱処理を静磁場あるいは回転磁場中で行うことにより
、優れた軟磁気特性が得られる。また、この熱処理は磁
気ヘッドの製造工程におけるガラス溶着工程を兼ねて行
うことができる。Each soft magnetic alloy layer [Fe-(T)-MC film] in the laminated film l produced in this manner exhibits some soft magnetic properties, but these soft magnetic alloy films have an amorphous phase. It contains a considerable proportion of is precipitated. By performing this heat treatment in a static magnetic field or a rotating magnetic field, excellent soft magnetic properties can be obtained. Further, this heat treatment can also be performed as a glass welding step in the manufacturing process of the magnetic head.
なお、前記微細結晶の析出工程は、完全に行なわれる必
要はなく、微細結晶が相当数（好ましくは５０％以上）
析出していれば良いので、アモルファス成分が一部残留
していても差し支えなく、残留したアモルファス成分が
特性向上の障害となることはない。Note that the step of precipitating the fine crystals does not need to be performed completely, and a considerable number of fine crystals (preferably 50% or more) is required.
Since it is sufficient that the amorphous component is precipitated, there is no problem even if some of the amorphous component remains, and the remaining amorphous component does not become an obstacle to improving the properties.
また、Ｃを膜中に添加する方法として、前記のようにタ
ーゲツト板にグラファイトのベレット１２を配置して複
合ターゲットとし、これをスパッタする方法の他に、Ｃ
を含まないターゲット（Ｆｅ−Ｍ系あるいはＦ ｅ−Ｔ
−Ｍ系）を用い、Ａｒ等の不活性ガス中にメタン（ＣＨ
，）等の炭化水素ガスを混合したガス雰囲気でスパッタ
する反応性スパッタ法等を用いることもできる。この反
応性スパッタ法では膜中のＣ濃度の制御が容易であるが
Ｆｅ層３を成膜する際にはＣＨ，ガスの供給を停止して
から成膜する必要がある。In addition, as a method of adding C to the film, in addition to the method of placing a graphite pellet 12 on the target plate to form a composite target as described above and sputtering this, there is also a method of adding C to the film.
(Fe-M system or Fe-T
-M system) in an inert gas such as Ar, methane (CH
It is also possible to use a reactive sputtering method in which sputtering is performed in a gas atmosphere containing a mixture of hydrocarbon gases such as , ), etc. This reactive sputtering method allows easy control of the C concentration in the film, but when forming the Fe layer 3, it is necessary to stop the supply of CH and gas before forming the film.
以下、軟磁性合金層４の成分を限定した理由について述
べる。なお、Ｆｅと元素Ｔと元素ＭとＣの成分限定理由
は特願平１−２７８２２０号の場合と大略同一である。The reasons for limiting the components of the soft magnetic alloy layer 4 will be described below. The reasons for limiting the components of Fe, element T, element M, and C are almost the same as in the case of Japanese Patent Application No. 1-278220.
Ｆｅは主成分であり、磁性を担う元素であって、少なく
ともフェライト（Ｂｓ ５０００Ｇ）以上の飽和磁束
密度を得るためには、Ｘ≧５０％が必要である。また、
良好な軟磁気特性を得るためには、Ｘ５９６％でなけれ
ばならない。Fe is the main component and is an element responsible for magnetism, and in order to obtain a saturation magnetic flux density at least higher than ferrite (Bs 5000G), it is necessary that X≧50%. Also,
In order to obtain good soft magnetic properties, it must be X596%.
元素Ｔ（即ちＣｏ、Ｎｉ）は、磁歪の調整の目的で添加
する元素である。Ｆｅ−Ｍ−Ｃ膜の場合、熱処理温度が
低いと磁歪が正になり、熱処理温度が高いと磁歪が負に
なる。高い熱処理温度（ガラス溶着温度）を必要とする
場合、磁歪を正にする効果のあるＮｉ、Ｃｏを適量添加
することにより、磁歪をほぼ零にすることができる。な
お、熱処理温度が適当な場合、元素Ｔの添加は特に必要
ないが、Ｔの添加は正の磁歪が＋１０−５台以上まで大
きくならないようにｙの値を調整しなくてはならない。Element T (ie, Co, Ni) is an element added for the purpose of adjusting magnetostriction. In the case of a Fe-MC film, when the heat treatment temperature is low, the magnetostriction becomes positive, and when the heat treatment temperature is high, the magnetostriction becomes negative. When a high heat treatment temperature (glass welding temperature) is required, the magnetostriction can be made almost zero by adding an appropriate amount of Ni or Co, which has the effect of making the magnetostriction positive. Note that if the heat treatment temperature is appropriate, addition of element T is not particularly necessary, but when adding T, the value of y must be adjusted so that the positive magnetostriction does not increase to +10-5 or more.
ここでｙの値について、特願平１−２７８２２０号にお
いては、０，１≦ｙ≦ｗ０であったものを、この発明に
おいて０，１≦ｙ≦２０まで拡大しているのは、Ｆｅ層
３の磁歪が負で大きい値を持ったぬに、積層Ｈ１の全体
の磁歪を＋１０−５台にまで大きくしないためのｙの許
容量が増加するためである。Here, regarding the value of y, in Japanese Patent Application No. 1-278220, 0,1≦y≦w0 is expanded to 0,1≦y≦20 in this invention. This is because the permissible amount of y is increased to prevent the overall magnetostriction of the laminated layer H1 from increasing to the +10-5 range, even though the magnetostriction of No. 3 has a negative and large value.
元素Ｍは軟磁気特性を良好にするために必要であり、ま
たＣと結合して炭化物の微細結晶を形成する。良好な軟
磁気特性を維持するためには、２層２％とする必要があ
るが、多すぎると飽和磁束密度が低下してしまうので、
２６３０％とする必要がある。Element M is necessary to improve soft magnetic properties, and also combines with C to form fine carbide crystals. In order to maintain good soft magnetic properties, it is necessary to make the two layers 2%, but if it is too large, the saturation magnetic flux density will decrease, so
It needs to be 2630%.
Ｃは軟磁気特性を良好にするため、及び、耐熱性を向上
させるために必要であり、Ｃは元素Ｍと結合して炭化物
の微細結晶を形成する。良好な軟磁気特性、及び、熱的
安定性を維持するためには１．５０．５％とする必要が
あるが、多すぎると飽和磁束密度が低下してしまうので
、１層２５％とする必要がある。C is necessary to improve soft magnetic properties and heat resistance, and C combines with element M to form fine crystals of carbide. In order to maintain good soft magnetic properties and thermal stability, it is necessary to set the content to 1.50.5%, but if it is too large, the saturation magnetic flux density will decrease, so it is set to 25% for each layer. There is a need.
元素Ｍの炭化物の微細結晶は磁壁のピンニングサイトと
して働き、透磁率の高周波特性を向上させる働きがある
とともに、膜中に均一に分散させることで、Ｆｅの微細
結晶が熱処理により成長して軟磁性を損うことを防止す
る働きがある。つまり、Ｐｅの結晶粒が成長して大きく
なると結晶磁気異方性の悪影響か大きくなり、軟磁気特
性が悪化するが、元素Ｍの炭化物の微細結晶がＦｅの粒
成長の障壁として働くことにより軟磁気特性の悪化を防
止する。The carbide microcrystals of element M act as pinning sites for the domain wall and improve the high-frequency characteristics of magnetic permeability.By uniformly dispersing them in the film, the microcrystals of Fe grow through heat treatment and become soft magnetic. It has the function of preventing damage to the In other words, as the crystal grains of Pe grow and become larger, the negative effect of magnetocrystalline anisotropy increases and the soft magnetic properties deteriorate. Prevents deterioration of magnetic properties.
上記軟磁性合金層４においてはその組成がＦｅに富む微
細な結晶を主体とし、飽和磁束密度を低下させる成分の
添加が制限されているから、非晶質状態に比べ鉄原子１
個あたりの磁気モーメントおよびキュリー温度が高くな
っており、高い飽和磁束密度が得られる。また、元素Ｍ
及びＣが含まれているとともに、金属組織が基本的に０
．０８μｍ以下の微細な結晶粒からなっており、結晶磁
気異方性による軟磁性への悪影響が軽減されるので、良
好な軟磁気特性が得られる。更に、元素Ｍの炭化物が析
出してＦｅを主成分とする結晶粒の成長を抑えるので、
ガラス溶着工程において加熱されても、結晶粒が粗大化
することがない。The composition of the soft magnetic alloy layer 4 is mainly composed of fine crystals rich in Fe, and the addition of components that reduce the saturation magnetic flux density is limited.
The magnetic moment and Curie temperature per piece are high, and a high saturation magnetic flux density can be obtained. Also, element M
and C are included, and the metal structure is basically 0.
．． It is made up of fine crystal grains of 0.08 μm or less, and the adverse effect of magnetocrystalline anisotropy on soft magnetism is reduced, so good soft magnetic properties can be obtained. Furthermore, since the carbide of element M precipitates and suppresses the growth of crystal grains mainly composed of Fe,
Even when heated in the glass welding process, crystal grains do not become coarse.
前記のように製造された積層膜Ｉにあっては、飽和磁束
密度が２１．５ｋＧの２０層３と最高１８ｋＧの飽和磁
束密度を有する軟磁性合金膜ｌとを交互に積層している
ために、全体で２００００Ｇを越える極めて高い飽和磁
束密度を得ることができる。また、Ｆ ｅ−（Ｔ ）−
Ｍ−Ｃ系の軟磁性合金層４は、膜自体微細結晶を主体と
し、軟磁気特性が優れていること、および、Ｆｅ層層中
中結晶粒は上下から軟磁性合金層４．４により挾まれて
膜厚方向には成長し難いので２０層３の結晶粒も微細と
なり、２０層３の軟磁気特性も良好であることにより、
積層膜Ｉは優れた軟磁気特性を有する。In the laminated film I manufactured as described above, 20 layers 3 having a saturation magnetic flux density of 21.5 kG and soft magnetic alloy films I having a maximum saturation magnetic flux density of 18 kG are alternately laminated. In total, an extremely high saturation magnetic flux density of over 20,000G can be obtained. Also, Fe-(T)-
The MC-based soft magnetic alloy layer 4 is mainly composed of fine crystals and has excellent soft magnetic properties, and the medium crystal grains in the Fe layer are sandwiched between the soft magnetic alloy layers 4.4 from above and below. Since it is difficult to grow in the film thickness direction, the crystal grains of the 20 layer 3 are also fine, and the soft magnetic properties of the 20 layer 3 are also good.
Laminated film I has excellent soft magnetic properties.
なお、２０層３の軟磁気特性を良好にするために、２０
層３の１層あたりの厚さは２０００Å以下とすることが
好ましい。また、軟磁性合金層４の層の厚さについては
、特に制限はないが、２０層３に対してあまり厚くする
と高い飽和磁束密度を得難い。また、２０層３および軟
磁性合金層４のいずれをも薄くしすぎると熱処理による
両者の層間の原子拡散により各成分の濃度が膜厚方向で
ほぼ均一に混じってしまい、積層化の効果が出ない。な
お、層厚の下限は約５０人である。In addition, in order to improve the soft magnetic properties of the 20 layer 3, the 20
The thickness of each layer of layer 3 is preferably 2000 Å or less. Further, there is no particular restriction on the thickness of the soft magnetic alloy layer 4, but if it is too thick compared to the 20 layer 3, it will be difficult to obtain a high saturation magnetic flux density. Furthermore, if both the 20 layer 3 and the soft magnetic alloy layer 4 are made too thin, the concentration of each component will be mixed almost uniformly in the film thickness direction due to atomic diffusion between the two layers due to heat treatment, which will reduce the effect of lamination. do not have. Note that the lower limit of the layer thickness is about 50 people.
２０層３は熱処理後は負の磁歪を示す。このため、軟磁
性合金層４をＭ、Ｃ濃度比の調整あるいはＴ＃度の調整
により正磁歪に調節することで、膜全体の平均の磁歪を
小さくすることが好ましい。20 layer 3 exhibits negative magnetostriction after heat treatment. Therefore, it is preferable to reduce the average magnetostriction of the entire film by adjusting the soft magnetic alloy layer 4 to have positive magnetostriction by adjusting the M and C concentration ratio or by adjusting the T# degree.
また、磁歪の調整は、熱処理温度あるいは２０層３と軟
磁性合金膜４との層厚比を変えることによっても可能で
あり、種々の用途に応じた設定が可能である。The magnetostriction can also be adjusted by changing the heat treatment temperature or the layer thickness ratio of the 20 layer 3 and the soft magnetic alloy film 4, and can be set according to various uses.
第４図は請求項４に記載した発明の一実施例を示すもの
であって、この実施例の積層膜２１は、純鉄からなるＦ
ｅＦｆｉ２３と先の実施例と同等の軟磁性合金層２４と
の間に、Ｆｅ層２３と軟磁性合金層２４の中間濃度の拡
散層２５を介在させた構成である。この拡散層２５は、
Ｆｅ層２３側に向かうにつれて元素Ｔ、ＭとＣなどの添
加元素の濃度が徐々に減少し、軟磁性合金層２４側に向
かうにつれて元素Ｍ、ＴとＣなどの添加元素の濃度が徐
々に増加するように濃度勾配がつけられている。FIG. 4 shows an embodiment of the invention as set forth in claim 4, and the laminated film 21 of this embodiment is made of F made of pure iron.
This is a configuration in which a diffusion layer 25 with an intermediate concentration between the Fe layer 23 and the soft magnetic alloy layer 24 is interposed between the eFfi 23 and the soft magnetic alloy layer 24 equivalent to the previous embodiment. This diffusion layer 25 is
The concentration of added elements such as elements T, M, and C gradually decreases toward the Fe layer 23 side, and the concentration of added elements such as elements M, T, and C gradually increases toward the soft magnetic alloy layer 24 side. A concentration gradient is set so that
従ってこの実施例の積層膜２１では厚さ方向の濃度分布
は第５図に示すようになっている。Therefore, in the laminated film 21 of this embodiment, the concentration distribution in the thickness direction is as shown in FIG.
前記構成の積層膜２１を得るには、第１図に示す構成の
積層膜ｌを所要時間熱処理して２０層３と軟磁性合金層
４との間に元素拡散を生じさけることで得ることができ
る。The laminated film 21 having the above structure can be obtained by heat-treating the laminated film 1 having the structure shown in FIG. can.
この構成の積層膜においても先に記載した実施例と同等
の効果をえることができる。Even in the laminated film having this structure, effects similar to those of the previously described embodiment can be obtained.
［実施例コ
（１）成膜
第３図に示１”ＲＦ２極スパッタ装置を用い、純鉄製の
ターゲットを備えたカソードとグラファイトペレットお
よびＨｆベレットを付けた鉄製ターゲットを備えたカソ
ードの両方を同時に放電させるとともに、基板ホルダを
回転させることにより、基板を両力ソードの間を行き来
するように移動させてＦｅ層とＦｅＨｆＣ層とを交互に
積層させた多層膜を形成した。この多層膜において、Ｆ
ｅ層１層あたりの膜厚と、ＦｅＨｆ０層１層あたりの膜
厚とそれらの積層数は第１表に示す通りであり、全体の
膜厚は５〜６μｍとした。この積層膜においＦｅＨｆＣ
膜の組成は、Ｆ ｅｓｓ、ｓＨｆｓ、ｓＣ＋ｏ、ｅであ
った。[Example (1) Film Formation] Using a 1" RF two-pole sputtering apparatus shown in FIG. 3, both the cathode equipped with a pure iron target and the cathode equipped with an iron target attached with graphite pellets and Hf pellets were simultaneously sputtered. At the same time as discharging, the substrate holder was rotated to move the substrate back and forth between the bipolar swords to form a multilayer film in which Fe layers and FeHfC layers were alternately laminated. In this multilayer film, F
The film thickness per e-layer, the film thickness per FeHf0 layer, and the number of layers thereof are shown in Table 1, and the total film thickness was 5 to 6 μm. In this laminated film, FeHfC
The composition of the film was F ess, sHfs, sC+o, e.
（２）熱処理および測定
成膜後、成膜したままの状態での磁気特性の測定と、無
磁場熱処理後の磁気特性の測定を行った。(2) Heat treatment and measurement After film formation, magnetic properties were measured in the as-formed state, and magnetic properties were measured after non-magnetic field heat treatment.
その結果を第１表に示す。The results are shown in Table 1.
（以下、余白）
第１表に示す試料ａ、ｂ、ｃの積層膜においては、Ｆｅ
層とＦｅＨｆＣ層の各々について１層あたりの厚さを５
９人、１１５人、２１０人と変化させたが、いずれも熱
処理後に２００００Ｇ以上の高い飽和磁束密度と良好な
軟磁気特性を示した。特に１層あたり、２１０Ａの厚さ
で合計２７５層積層した試料Ｃの積層膜は、５５０℃（
２０分保持）の熱処理後に３１４０という高い透磁率を
示し、熱処理温度を６５０℃に上げても透磁率２５２０
という優れた熱安定性を示した。しかし、この試料Ｃの
積層膜の磁歪定数は−１，９ＸＩ（Ｉ’と若干負に大き
い。これは、Ｆｅ層に対してＦｅＨｆＣ層の厚さを厚く
することによって小さくすることかでき、第１表の試料
ｄに示すようにｌｏ−７台のλＳが得られる。また、磁
歪定数λＳの調整はＦｅＨｆＣ層の組成を変える（Ｆ
ｅＨｆＣ層のλＳがより正になるようにする）ことによ
って可能であり、第２表に示すようにＣ濃度を増やすこ
と、あるいは元素Ｔ（ＣｏあるいはＮｉ）を添加するこ
とにより同様にｌｏ−７台のλＳとすることが可能であ
る。(Hereinafter, blank space) In the laminated films of samples a, b, and c shown in Table 1, Fe
The thickness per layer is 5 for each layer and FeHfC layer.
Although the number of participants was changed to 9, 115, and 210, all of them exhibited a high saturation magnetic flux density of 20,000 G or more and good soft magnetic properties after heat treatment. In particular, the laminated film of sample C, which had a total of 275 layers laminated with a thickness of 210A per layer, was heated at 550°C (
It shows a high magnetic permeability of 3140 after heat treatment (held for 20 minutes), and even when the heat treatment temperature is raised to 650℃, the magnetic permeability remains 2520.
It showed excellent thermal stability. However, the magnetostriction constant of the laminated film of sample C is -1.9XI (I', which is slightly negative). As shown in sample d in Table 1, λS on the order of lo-7 can be obtained.Also, adjusting the magnetostriction constant λS changes the composition of the FeHfC layer (F
This is possible by making λS of the eHfC layer more positive), and by increasing the C concentration as shown in Table 2, or by adding element T (Co or Ni), lo-7 can be similarly achieved. It is possible to set the value of λS to .
［発明の効果］
以上詳述したようにこの発明の積層膜に用いられている
軟磁性合金層は、Ｆｅを主成分とする微細な結晶粒から
なっているので、従来のアモルファス合金膜とは異なり
、無磁場中で熱処理を行っても高い飽和磁束密度と高い
透磁率を発揮する膜を得ることができ、磁場をかけて熱
処理する場合よりも工程の簡略化をなしえる。また、前
記軟磁性合金層には元素Ｍ（Ｔｉ、Ｚｒ、Ｖ、Ｈｆ、Ｎ
ｂ、Ｔａ、Ｍ。[Effects of the Invention] As detailed above, the soft magnetic alloy layer used in the laminated film of the present invention is composed of fine crystal grains containing Fe as a main component, so it is different from conventional amorphous alloy films. In contrast, even if heat treatment is performed in the absence of a magnetic field, a film exhibiting high saturation magnetic flux density and high magnetic permeability can be obtained, and the process can be simplified compared to when heat treatment is performed by applying a magnetic field. Further, the soft magnetic alloy layer contains elements M (Ti, Zr, V, Hf, N
b, Ta, M.
Ｗ）及びＣという軟磁性を良好とする成分が添加される
とともに、金属組織が微細な結晶粒から成り、結晶磁気
異方性による軟磁性への悪影響が軽減されるので、良好
な軟磁気特性が得られる。Components W) and C that improve soft magnetic properties are added, and the metal structure consists of fine crystal grains, which reduces the negative effect of magnetocrystalline anisotropy on soft magnetism, resulting in good soft magnetic properties. is obtained.
更に、前記軟磁性合金層は微細な結晶粒からなるととも
に、添加された元素ＭがＣと炭化物を形成するから、ガ
ラス溶着工程において加熱されても、結晶粒が粗大化す
ることがなく、上記の特性を維持する。Furthermore, since the soft magnetic alloy layer is composed of fine crystal grains and the added element M forms a carbide with C, the crystal grains do not become coarse even when heated in the glass welding process, and the above-mentioned maintain the characteristics of
更にまた、上記組成に加えて元素Ｔ（Ｃｏ、Ｎｉ）を添
加し、磁歪を調整することにより、磁気ヘット製造工程
等で生じる種々の歪による軟磁気特性の劣化を防ぐこと
ができるものである。Furthermore, by adding elements T (Co, Ni) in addition to the above composition and adjusting the magnetostriction, it is possible to prevent deterioration of the soft magnetic properties due to various strains occurring in the manufacturing process of the magnetic head, etc. .
即ち、本発明の軟磁性積層膜は、前述の如く優れた軟磁
気特性を有する軟磁性合金層と、優れた飽和磁束密度を
有するＦｅ層とを積層したものであるために、Ｆ ｅ−
（Ｔ ＩＭ−Ｃ系の軟磁性合金膜単独の優れた軟磁気特
性と耐熱性を維持しながら、２００００Ｇ以上の優れた
飽和磁束密度が得られる。That is, since the soft magnetic laminated film of the present invention is a laminated layer of a soft magnetic alloy layer having excellent soft magnetic properties as described above and an Fe layer having an excellent saturation magnetic flux density, Fe-
(It is possible to obtain an excellent saturation magnetic flux density of 20,000 G or more while maintaining the excellent soft magnetic properties and heat resistance of the TIM-C-based soft magnetic alloy film alone.
従って本発明の軟磁性積層膜は、２００００Ｇ以上の飽
和磁束密度が要求される高密度記録用の磁気ヘッドの素
材として好適である。Therefore, the soft magnetic laminated film of the present invention is suitable as a material for a magnetic head for high-density recording, which requires a saturation magnetic flux density of 20,000 G or more.
第１図は本発明の一実施例の積層膜を示す断面図、第２
図は第１図に示す積層膜の厚さ方向の濃度分布を示す線
図、第３図は第１図に示す積層膜を製造するのに用いて
好適なスパッタ装置の一例を示す偕成図、第４図は本発
明の他の実施例の積層膜を示す断面図、第５図は第４図
に示す積層膜の濃度分布を示す線図である。
１・積層膜、２・・基板、３・・・Ｆｅ層、４・・軟磁
性合金層、５・基板ホルダ、７，８・・・カソード、Ｉ
Ｏ・・基板、１トターゲット、１２．１３・・・ペレッ
ト、１４・・・ターゲット。FIG. 1 is a sectional view showing a laminated film according to an embodiment of the present invention, and FIG.
The figure is a diagram showing the concentration distribution in the thickness direction of the laminated film shown in Fig. 1, and Fig. 3 is a construction diagram showing an example of a sputtering apparatus suitable for use in manufacturing the laminated film shown in Fig. 1. FIG. 4 is a sectional view showing a laminated film according to another embodiment of the present invention, and FIG. 5 is a diagram showing the concentration distribution of the laminated film shown in FIG. 4. 1. Laminated film, 2. Substrate, 3. Fe layer, 4. Soft magnetic alloy layer, 5. Substrate holder, 7, 8. Cathode, I
O...Substrate, 1 target, 12.13...Pellet, 14...Target.
Claims (1)
層とＦｅ層とが交互に積層されてなり、前記軟磁性合金
層は全体が平均粒径０．０８μｍ以下の微細な結晶粒か
らなり、微細結晶粒の一部に元素Ｍの炭化物の結晶相を
含むことを特徴とする軟磁性積層膜。 ただし前記組成式において、ＭはＴｉ，Ｚｒ，Ｈｆ，Ｖ
，Ｎｂ，Ｔａ，Ｍｏ，Ｗのうち、少なくとも１種からな
る金属元素又はその混合物であり、組成比ｘ，ｚ，ｗは
原子％で ５０≦ｘ≦９６ ２≦ｚ≦３０ ０．５≦ｗ≦２５ ｘ＋ｚ＋ｗ＝１００ なる関係を満足するものとする。 （２）ＦｅｘＴｙＭｚＣｗなる組成式で示される軟磁性
合金層とＦｅ層とが交互に積層されてなり、前記軟磁性
合金層は全体が平均粒径０．０８μｍ以下の微細な結晶
粒からなり、微細結晶粒の一部に元素Ｍの炭化物の結晶
相を含むことを特徴とする軟磁性積層膜。 ただし前記組成式において、ＭはＴｉ，Ｚｒ，Ｈｆ，Ｖ
，Ｎｂ，Ｔａ，Ｍｏ，Ｗのうち、少なくとも１種からな
る金属元素又はその混合物、ＴはＣｏ，Ｎｉのうち、少
なくとも１種を示し、組成比ｘ，ｙ，ｚ，ｗは原子％で ５０≦ｘ≦９６ ０．１≦ｙ≦２０ ２≦ｚ≦３０ ０．５≦ｗ≦２５ ｘ＋ｚ＋ｗ＝１００ なる関係を満足するものとする。 （３）請求項１または２に記載の軟磁性合金層が平均結
晶粒径０．０８μｍ以下の微細な結晶粒と非晶質相との
混在した組織を有し、微細結晶粒の一部に元素Ｍの炭化
物の結晶相を含むことを特徴とする軟磁性積層膜。 （４）請求項１，２または３に記載したＦｅ層と軟磁性
合金層との界面に、軟磁性合金層の構成元素の濃度勾配
がっけられてなることを特徴とする軟磁性積層膜。[Scope of Claims] (1) Soft magnetic alloy layers represented by the composition formula FexMzCw and Fe layers are alternately laminated, and the soft magnetic alloy layer is entirely composed of fine grains with an average grain size of 0.08 μm or less. A soft magnetic laminated film comprising crystal grains and containing a crystal phase of carbide of element M in a part of the fine crystal grains. However, in the above compositional formula, M is Ti, Zr, Hf, V
, Nb, Ta, Mo, and W, or a mixture thereof, and the composition ratios x, z, and w are in atomic %: 50≦x≦96 2≦z≦30 0.5≦w It is assumed that the following relationship is satisfied: ≦25 x+z+w=100. (2) Soft magnetic alloy layers represented by the composition formula FexTyMzCw and Fe layers are alternately laminated, and the soft magnetic alloy layer is entirely composed of fine crystal grains with an average grain size of 0.08 μm or less. A soft magnetic laminated film characterized in that part of the crystal grains contains a crystal phase of carbide of element M. However, in the above compositional formula, M is Ti, Zr, Hf, V
, Nb, Ta, Mo, W, T represents at least one of Co, Ni, and the composition ratio x, y, z, w is 50 atomic%. It is assumed that the following relationships are satisfied: ≦x≦96 0.1≦y≦20 2≦z≦30 0.5≦w≦25 x+z+w=100. (3) The soft magnetic alloy layer according to claim 1 or 2 has a structure in which fine crystal grains with an average crystal grain size of 0.08 μm or less and an amorphous phase are mixed, and a part of the fine crystal grains A soft magnetic laminated film characterized by containing a crystalline phase of carbide of element M. (4) A soft magnetic laminated film characterized in that a concentration gradient of constituent elements of the soft magnetic alloy layer is formed at the interface between the Fe layer and the soft magnetic alloy layer according to claim 1, 2 or 3. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2063809A JP2710441B2 (en) | 1990-03-14 | 1990-03-14 | Soft magnetic laminated film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2063809A JP2710441B2 (en) | 1990-03-14 | 1990-03-14 | Soft magnetic laminated film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03265105A true JPH03265105A (en) | 1991-11-26 |
| JP2710441B2 JP2710441B2 (en) | 1998-02-10 |
Family
ID=13240074
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2063809A Expired - Fee Related JP2710441B2 (en) | 1990-03-14 | 1990-03-14 | Soft magnetic laminated film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2710441B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100734236B1 (en) * | 2005-08-05 | 2007-07-02 | 치앙 천-리앙 판 | Soft magnet structure |
| EP1850334A1 (en) * | 2006-04-27 | 2007-10-31 | Heraeus, Inc. | Soft magnetic underlayer in magnetic media and soft magnetic alloy based sputter target |
| JP2020517832A (en) * | 2017-04-27 | 2020-06-18 | エヴァテック・アーゲー | Soft magnetic multilayer deposition apparatus, method of manufacture, and magnetic multilayer |
| US20230111296A1 (en) * | 2021-10-07 | 2023-04-13 | Western Digital Technologies, Inc. | Longitudinal Sensor Bias Structures and Method of Formation Thereof |
-
1990
- 1990-03-14 JP JP2063809A patent/JP2710441B2/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100734236B1 (en) * | 2005-08-05 | 2007-07-02 | 치앙 천-리앙 판 | Soft magnet structure |
| EP1850334A1 (en) * | 2006-04-27 | 2007-10-31 | Heraeus, Inc. | Soft magnetic underlayer in magnetic media and soft magnetic alloy based sputter target |
| JP2020517832A (en) * | 2017-04-27 | 2020-06-18 | エヴァテック・アーゲー | Soft magnetic multilayer deposition apparatus, method of manufacture, and magnetic multilayer |
| US20230111296A1 (en) * | 2021-10-07 | 2023-04-13 | Western Digital Technologies, Inc. | Longitudinal Sensor Bias Structures and Method of Formation Thereof |
| US11631535B1 (en) * | 2021-10-07 | 2023-04-18 | Western Digital Technologies, Inc. | Longitudinal sensor bias structures and method of formation thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2710441B2 (en) | 1998-02-10 |
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