JPH0573242B2 - - Google Patents
Info
- Publication number
- JPH0573242B2 JPH0573242B2 JP61054054A JP5405486A JPH0573242B2 JP H0573242 B2 JPH0573242 B2 JP H0573242B2 JP 61054054 A JP61054054 A JP 61054054A JP 5405486 A JP5405486 A JP 5405486A JP H0573242 B2 JPH0573242 B2 JP H0573242B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- magnetic alloy
- group
- metal selected
- alloy film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000203 mixture Substances 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 229910045601 alloy Inorganic materials 0.000 claims description 14
- 239000000956 alloy Substances 0.000 claims description 14
- 239000007789 gas Substances 0.000 claims description 14
- 229910001004 magnetic alloy Inorganic materials 0.000 claims description 13
- 229910052757 nitrogen Inorganic materials 0.000 claims description 11
- 238000004544 sputter deposition Methods 0.000 claims description 10
- 229910052742 iron Inorganic materials 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 229910052748 manganese Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims 3
- 229910052735 hafnium Inorganic materials 0.000 claims 3
- 150000004767 nitrides Chemical class 0.000 description 15
- 230000005389 magnetism Effects 0.000 description 9
- 230000007423 decrease Effects 0.000 description 7
- 238000005121 nitriding Methods 0.000 description 7
- 239000010410 layer Substances 0.000 description 6
- 229910007744 Zr—N Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910020018 Nb Zr Inorganic materials 0.000 description 4
- 230000005415 magnetization Effects 0.000 description 4
- 230000001771 impaired effect Effects 0.000 description 3
- 229910001092 metal group alloy Inorganic materials 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 2
- 229910000521 B alloy Inorganic materials 0.000 description 1
- 229910001199 N alloy Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000004017 vitrification Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/13—Amorphous metallic alloys, e.g. glassy metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
Description
産業上の利用分野
本発明は、磁気ヘツド等に適した軟磁性合金膜
及びその形成法に関する。
従来の技術
従来よりArガス中にN2ガスを混入させたスパ
ツター法や、窒化物をターゲツトに用いたスパツ
ター法により、窒素を含む磁性合金膜の作成が試
みられて来た。これらのものには、Fe、Co、Ni
とガラス化元素Ｂ、Si、Al、Ｐ、Ｃ等より成る
合金の窒化膜（特開昭54−94428号公報、及び同
60−152651号公報）や、Feの窒化物の研究があ
る（ジヤーナル オブ アプライドフイジツクス
（J.Appl Phys.）53(11)P8332〜34（1982））。前者に
おいては、たとえばFe−Ｂ系を窒化したFe−Ｂ
−Ｎにおいては垂直磁気異方性が増加したりし
て、Fe−Ｂ系合金の有する軟磁性がそこなわれ、
抗磁力Hcの大きな磁性膜になるほか、飽和磁化
4πMSもＮ含有量と伴に低下する事が知られてい
る。後者においては微量のＮを含む場合4πMSは
むしろFeのそれより微かに増加するが、このFe
−Ｎ系合金膜のHcはやはり大きく軟磁性を示さ
ないことが知られている。
発明が解決しようとする問題点
本発明は上述の問題点を解決し、窒化物特有の
耐摩耗性と金属合金よりも高い比抵抗を有し、か
つ軟磁性をさほどそこなう事なく高い4πMSを維
持する事を可能とするものである。
問題点を解決するための手段
本発明による軟磁性合金膜は、次の組成式で表
わされるメタルーメタル系合金の窒化物から構成
される。
TxMyNz ……(1)
ただし
ＴはFe又はCoを主成分としFe、Co、Mnより
なる群から選ばれた少なくとも１種の金属、Ｍは
Nb、Zr、Ti、Ta、Ｗより成る群から選ばれた
少くとも１種の金属、
Ｎは窒素
であり、ｘ、ｙ、ｚは各々原子パーセントを表
し、
75≦ｘ＜94
６≦ｙ＜25
0.1≦ｚ≦20
ｘ＋ｙ＋ｚ＝100 ……(2)
である。
作 用
(1)式で示した組成の（スパツター）合金膜は窒
化物でありながら
ｚ≦20 ……(3)
である時、(1)式においてｚ＝０である窒化してい
ない合金膜に比べて飽和磁化4πMSの減少が少な
く、又この範囲内で窒素を適当量含有する時増加
する。さらに窒化しても窒化する前の合金膜の軟
磁性が従来知られているような窒化膜と異なつ
て、(3)式の範囲内であまりそこなわれない。なお
窒化した事による耐摩性向上の効果が現われるに
は
0.1≦ｚ ……(4)
である事が必要である。
又磁気特性として優れた軟磁性を得る為には
６≦ｙ ……(5)
（即ちｘ＜94）
である事が必要であり、磁気ヘツド用等への応用
を考えた場合4πMS≧5000Gaussである為には
75≦ｘ ……(6)
（即ちｙ＜25）である事が必要である。
又この合金膜と、窒化されていない、極めて優
れた軟磁性を示すメタル−メタル系合金膜
TxMy ……(7)
（ｘ＋ｙ＝100のほか定義は(2)式に同じ）
を交互に積層して多層膜化する事により全体とし
て耐摩性がよくかつ軟磁性をも有する多層膜が得
られ、１層の厚さをｔとする時、
ｔ≦1000Å
でその多層膜化の効果が著しく、TxMyNz部とTx
My部との間の偏摩耗もほとんどなく、かつTxMy
Nz膜部の軟磁性の改善度も大で全体として優れ
た軟磁性をも合せ持つ。
すなわち、窒化する事により多少そこなわれる
軟磁気特性も(7)式で表わされ(5)、(6)の組成範囲
の、優れた軟磁気特性を有する事が知られている
メタル−メタル系合金膜（USP−4437912）と交
互に重ねて多層膜化する事により改善され得る。
実施例
実施例 １
Co85Nb10Zr5なる組成のターゲツトを用い、Ar
中にN2を0.1〜50％混合したガスを用いて反応ス
パツター法により厚さ1μｍの窒化膜を作成した。
比較の為、Fe、Fe80B20なる組成のターゲツトを
同じ条件でスパツターしこれらの窒化膜を作成
し、特性の比較を行なつた結果を第１図に示す。
同図のデータよりわかるように、本発明合金Co
−Nb−Zr−Ｎは窒化によつてもその軟磁性が比
較的劣化しにくく、かつ4πMSは窒化によつて減
少しないばかりか、むしろｘ＝10％で極大を示
し、微かながらこの付近で増大を示す事がわかつ
た。
第２図に示した分析結果とこのデータとの比較
により、膜幅にＮを約20％以下含むものはHcも
比較的小さく又4πMSも減少せず、磁気ヘツド用
軟磁性合金として有望であることがわかる。
これに反し、メタル−メタロイド系のものは第
１図に示したFe−Ｂ−Ｎのデータからもわかる
ように、窒化により4πMSが比較的早く減少する
ほか、本発明のCo−Nb−Zr−Ｎの場合と比較し
て窒化によるHcの増大も大きい。又Feの窒化膜
Fe−Ｎはある窒素含有量に対しFe膜よりもむし
ろ4πMSが増加するものの、Hcが極めて大きく軟
磁性体としては実用的でない。
実施例 ２
実施例１と同じターゲツトを用い、スパツター
中に１定時間間隔をおいてArガス中にN2ガスを
10％混合する事により、Co−Nb−ZrとCo−Nb
−Zr−Ｎの多層膜を作成した。このN2ガスを混
合してスパツターする時間を変化させる事によ
り、Co−Nb−Zr−Ｎ膜の膜厚ｔを変化させた、
又N2混合スパツター時間と非混合スパツター時
間を等しくする事により、Co−Nb−Zr膜の膜厚
t′はほぼｔと等しくなるようにした（厳密にはわ
ずかながらt′＞ｔである）。得られた多層膜の総
厚は約12μｍとなるようにして、作成した多層膜
は以下の通りである。
試料１：ｔ9500Å、t′10500Å、層数ｎ＝12
試料２：ｔ2800Å、t′3200Å、ｎ＝40
試料３：ｔ1000Å、t′1000Å、ｎ＝120
試料４：ｔ300Å、t′300Å、ｎ＝400
試料５：ｔ100Å、t′100Å、ｎ＝1200
これらの多層膜をもう１枚の基板でサンドイツ
チして接着し、多層膜側面がテープ摺動面となる
ように磁気ヘツドチツプ形状に加工し市販の
VTRデツキに取付け、テープを100時間走行させ
た後のテープ摺動面の偏摩耗を調べた。窒化膜部
は窒化されていない膜部よりも耐摩耗性がある
為、第３図に示したような偏摩耗Δlが生ずる。
このΔlを多層膜の１層の膜厚ｔの関数として第
３図に示した。又作成した多層膜のHcもｔの関
数として同図に示した。実験結果よりもｔの減少
とともにΔl、Hcとも減少しｔ≦1000Åでその効
果が著しい事がわかつた。
実施例 ３
各種合金ターゲツトを用い、種々の（Ar＋
N2）混合ガスでスパツターし合金膜を作成し、
それらの膜の諸特性を比較した。なお合金膜は熱
膨張係数αが約120の水冷したガラス基板上にrf2
極スパツター装置を用い投入電力350W、ガス圧
10×10-2Torrで形成した。結果を以下の表に示
す。N2分圧0.1％でも硬度は上昇する事がわかつ
た。
INDUSTRIAL APPLICATION FIELD The present invention relates to a soft magnetic alloy film suitable for magnetic heads and the like, and a method for forming the same. Prior Art Conventionally, attempts have been made to create a magnetic alloy film containing nitrogen using a sputtering method in which N 2 gas is mixed into Ar gas or a sputtering method using nitride as a target. These include Fe, Co, Ni
Nitride film of an alloy consisting of vitrification element B, Si, Al, P, C, etc.
60-152651) and research on Fe nitrides (J.Appl Phys. 53(11) P8332-34 (1982)). In the former case, for example, Fe-B nitrided Fe-B system is used.
In -N, the perpendicular magnetic anisotropy increases and the soft magnetism of the Fe-B alloy is impaired.
In addition to being a magnetic film with a large coercive force Hc, saturation magnetization
It is known that 4πM S also decreases with increasing N content. In the latter case, when a small amount of N is included, 4πM S increases slightly more than that of Fe, but this Fe
It is known that the -N alloy film has a large Hc and does not exhibit soft magnetism. Problems to be Solved by the Invention The present invention solves the above-mentioned problems, and has the unique wear resistance of nitrides and higher resistivity than metal alloys, and high 4πM S without significantly impairing soft magnetism. It is possible to maintain it. Means for Solving the Problems The soft magnetic alloy film according to the present invention is composed of a nitride of a metal-metal alloy represented by the following compositional formula. T x M y N z ...(1) However, T is Fe or Co as the main component and at least one metal selected from the group consisting of Fe, Co, and Mn, and M is
At least one metal selected from the group consisting of Nb, Zr, Ti, Ta, and W, N is nitrogen, x, y, and z each represent atomic percent, 75≦x<94 6≦y< 25 0.1≦z≦20 x+y+z=100...(2). Effect Although the (sputter) alloy film with the composition shown in equation (1) is a nitride, when z≦20...(3), the non-nitrided alloy film where z=0 in equation (1) The saturation magnetization 4πM S decreases less than that of 4πM S, and increases when an appropriate amount of nitrogen is contained within this range. Furthermore, even when nitrided, the soft magnetic properties of the alloy film before nitridation are not significantly impaired within the range of equation (3), unlike conventionally known nitride films. In order for the effect of improving wear resistance due to nitriding to appear, it is necessary that 0.1≦z...(4). In addition, in order to obtain excellent soft magnetism as a magnetic property, it is necessary that 6≦y...(5) (that is, x<94), and when considering application to magnetic heads, etc., 4πM S ≧5000 Gauss. In order to do so, it is necessary that 75≦x...(6) (that is, y<25). In addition, this alloy film and a metal-metal alloy film that is not nitrided and exhibits extremely excellent soft magnetism T x M y ...(7) (definitions are the same as equation (2) except x + y = 100) are alternately used. By laminating them to form a multilayer film, a multilayer film with good wear resistance as a whole and soft magnetism can be obtained.When the thickness of one layer is t, the effect of the multilayer film is 1000Å. Remarkably, T x M y N z part and T x
There is almost no uneven wear between the M y part and T x M y
The degree of improvement in the soft magnetism of the Nz film part is also large, and it also has excellent soft magnetism as a whole. In other words, the soft magnetic properties that are somewhat impaired by nitriding are expressed by equation (7), and metal-metals that are known to have excellent soft magnetic properties within the composition range of (5) and (6). This can be improved by forming a multilayer film by alternately stacking the alloy film (USP-4437912). Examples Example 1 Using a target with a composition of Co 85 Nb 10 Zr 5 , Ar
A nitride film with a thickness of 1 μm was formed by a reaction sputtering method using a gas containing 0.1 to 50% N 2 in the mixture.
For comparison, targets with compositions of Fe and Fe 80 B 20 were sputtered under the same conditions to form nitride films, and their properties were compared. The results are shown in Figure 1.
As can be seen from the data in the same figure, the present invention alloy Co
-Nb-Zr-N's soft magnetism is relatively hard to deteriorate even by nitriding, and 4πM S not only does not decrease by nitriding, but in fact shows a maximum at x = 10%, and is slightly It was found that it shows an increase. Comparison of this data with the analysis results shown in Figure 2 shows that the Hc is relatively small and the 4πM S does not decrease when the film width contains about 20% or less of N, making it a promising soft magnetic alloy for magnetic heads. I understand that there is something. On the other hand, as can be seen from the Fe-B-N data shown in Figure 1, metal-metalloid-based 4πM S decreases relatively quickly due to nitriding, and the Co-Nb-Zr of the present invention The increase in Hc due to nitriding is also large compared to the case of -N. Also, Fe nitride film
Although Fe-N increases 4πM S more than Fe film for a certain nitrogen content, Hc is extremely large and it is not practical as a soft magnetic material. Example 2 Using the same target as in Example 1, N2 gas was added to Ar gas at regular intervals during sputtering.
By mixing 10%, Co-Nb-Zr and Co-Nb
A multilayer film of -Zr-N was created. The thickness t of the Co-Nb-Zr-N film was changed by changing the sputtering time of mixing this N 2 gas.
Also, by making the N2 mixed sputtering time and non-mixing sputtering time equal, the thickness of the Co-Nb-Zr film can be reduced.
t' was made to be approximately equal to t (strictly speaking, t'> t, albeit slightly). The total thickness of the obtained multilayer film was about 12 μm, and the multilayer film was created as follows. Sample 1: t9500Å, t'10500Å, number of layers n=12 Sample 2: t2800Å, t'3200Å, n=40 Sample 3: t1000Å, t'1000Å, n=120 Sample 4: t300Å, t'300Å, n=400 Sample 5: t 100 Å, t' 100 Å, n = 1200 These multilayer films were bonded together with another substrate by sandwiching, and processed into a magnetic head chip shape with the side surface of the multilayer film serving as the tape sliding surface.
We installed the tape on a VTR deck and ran the tape for 100 hours, and then examined uneven wear on the tape sliding surface. Since the nitride film portion has more wear resistance than the non-nitrided film portion, uneven wear Δl as shown in FIG. 3 occurs.
This Δl is shown in FIG. 3 as a function of the thickness t of one layer of the multilayer film. The figure also shows Hc of the produced multilayer film as a function of t. From the experimental results, it was found that as t decreases, both Δl and Hc decrease, and the effect is significant when t≦1000 Å. Example 3 Using various alloy targets, various (Ar+
N2 ) Create an alloy film by sputtering with mixed gas,
The properties of those films were compared. The alloy film is placed on a water-cooled glass substrate with a thermal expansion coefficient α of approximately 120.
Input power 350W and gas pressure using pole sputter device
It was formed at 10×10 -2 Torr. The results are shown in the table below. It was found that the hardness increased even with N2 partial pressure of 0.1%.
【表】【table】
【表】
実施例 ４
本発明多層合金膜をAr中のN2混合比が０と10
％の間で一定時間間隔で変化させ１層の膜厚約
300Åのものを400層重ねて総厚12μｍとし実施例
２と同様の実験を行なつた。結果を以下に示す。[Table] Example 4 The multilayer alloy film of the present invention was prepared with N2 mixing ratio in Ar of 0 and 10.
The film thickness of one layer is changed between % at regular intervals.
The same experiment as in Example 2 was conducted by stacking 400 layers of 300 Å to give a total thickness of 12 μm. The results are shown below.
【表】
ただし表中において単層膜とは、比較のため
N2ガス混合比を０％と10％に固定して作成した
膜厚12μｍの単層膜であり、摩耗量ｌは、100時
間走行後の総摩耗量であり、偏摩耗は多層膜の窒
化膜部と非窒化膜部との間に生ずるものである。
多層膜化により窒化膜よりもHcが小さく、又摩
耗量は単層の非窒化膜より少なくなつており特性
が改善されている事がわかる。
発明の効果
本発明の軟磁性合金膜は、高い電気抵抗と高硬
度を有し、かつ窒化物でありながら窒化による飽
和磁化の劣化が少なく、逆に増加する場合もあり
磁気ヘツド等の応用に適した軟磁性合金膜であ
る。[Table] However, in the table, single layer film is used for comparison.
This is a single layer film with a thickness of 12 μm created by fixing the N2 gas mixture ratio at 0% and 10%. The amount of wear l is the total amount of wear after running for 100 hours. This occurs between the film portion and the non-nitride film portion.
It can be seen that due to the multilayer film, Hc is smaller than that of the nitride film, and the amount of wear is less than that of a single-layer non-nitride film, indicating that the properties are improved. Effects of the Invention The soft magnetic alloy film of the present invention has high electrical resistance and high hardness, and although it is a nitride, there is little deterioration in saturation magnetization due to nitriding, and on the contrary, it may increase, making it suitable for applications such as magnetic heads. This is a suitable soft magnetic alloy film.
第１図は本発明合金Co−Nb−Zr−Ｎと従来例
であるFe−Ｎ、Fe−Ｂ−Ｎ合金の飽和磁化と抗
磁力のプラズマ中のN2ガス混合比依存性を示す
グラフ、第２図はN2ガス混合比とスパツター法
で作成した膜中のＮの原子％との相関を示すグラ
フ、第３図は（Co−Nb−Zr／Co−Nb−Zr−Ｎ）
n多層膜の偏摩耗量Δlと抗磁力Hcの１層の膜厚依
存性を示すグラフである。
FIG. 1 is a graph showing the dependence of the saturation magnetization and coercive force of the present alloy Co-Nb-Zr-N and conventional examples Fe-N and Fe-B-N alloys on the N2 gas mixture ratio in the plasma. Figure 2 is a graph showing the correlation between the N2 gas mixture ratio and the atomic % of N in the film created by the sputtering method, and Figure 3 is (Co-Nb-Zr/Co-Nb-Zr-N).
It is a graph showing the dependence of the uneven wear amount Δl and the coercive force Hc on the thickness of one layer of the n multilayer film.
Claims (1)
Coを主成分としFe、Co、Mn、Niより成る群か
ら選択された少なくとも１種の金属、ＭはNb、
Zr、Ti、Ta、Ｗ、Cr、Hfより成る群から選択さ
れた少なくとも１種の金属、ＮはＮ（窒素）であ
つて、原子パーセントを表すｘ、ｙ、ｚがそれぞ
れ 75≦ｘ＜94、 ６≦ｙ＜25、 0.1≦ｚ≦20、 ｘ＋ｙ＋ｚ＝100 である組成から成る軟磁性合金膜。 ２ TxMyNzで示される組成より成る磁性合金膜
と、TxMyで示される組成よりなる磁性合金膜と
を交互に重ねた多層膜から成り、ＴはFe、Coを
主成分としFe、Co、Mn、Niより成る群から選
択された少なくとも１種の金属、ＭはNb、Zr、
Ti、Ta、Ｗ、Cr、Hfより成る群から選択された
少なくとも１種金属、ＮはＮ（窒素）であつて、
ｘ、ｙ、ｚは原子パーセントを表すｘ、ｙ、ｚが
それぞれ 75≦ｘ＜94、 ６≦ｙ＜25、 0.1≦ｚ≦20、 ｘ＋ｙ＋ｚ＝100 である組成から成る軟磁性合金膜。 ３ 多層膜の１層の膜厚をｔとする時 ｔ≦1000Å である特許請求の範囲第２項記載の軟磁性合金
膜。 ４ Tx′My′で示される組成より成る合金ターゲ
ツトを用いてスパツター法により磁性合金膜を形
成する際、Arスパツターガス中にN2ガスを周期
的に混合することによりTxMyNzで示される組成
の層とTx′My′で示される組成の層とを交互に積
み重ねて多層とし、かつ前記合金ターゲツトおよ
び前記両層のそれぞれの組成がＴはFe、Coを主
成分としてFe、Co、Mn、Niより成る群から選
択された少なくとも１種の金属、ＭはNb、Zr、
Ti、Ta、Ｗ、Cr、Hfより成る群から選択された
少なくとも１種の金属、ＮはＮ（窒素）であつて、
ｘ、ｙ、ｚおよびx′、y′は原子パーセントを表す
ｘ、ｙ、ｚ、x′およびy′がそれぞれ75≦ｘ＜94、
６≦ｙ＜25、0.1≦ｚ≦20、ｘ＋ｙ＋ｚ＝100、75
≦x′＜94、６≦y′＜25、x′＋y′＝100である軟磁性
合金膜の形成法。 ５ １層の層厚が1000Å以下となるようにN2ガ
スの混合周期を設定する特許請求の範囲第４項記
載の軟磁性合金膜の形成法。[Claims] 1. The general formula of the composition is T x M y N z , where T is Fe,
Co as the main component, at least one metal selected from the group consisting of Fe, Co, Mn, and Ni; M is Nb;
At least one metal selected from the group consisting of Zr, Ti, Ta, W, Cr, and Hf, N is N (nitrogen), and x, y, and z representing atomic percent are each 75≦x<94 , 6≦y<25, 0.1≦z≦20, x+y+z=100. 2 Consists of a multilayer film in which magnetic alloy films with the composition shown by T x M y N z and magnetic alloy films with the composition shown by T x M y are alternately stacked, where T is mainly composed of Fe and Co. and at least one metal selected from the group consisting of Fe, Co, Mn, and Ni; M is Nb, Zr,
at least one metal selected from the group consisting of Ti, Ta, W, Cr, and Hf; N is N (nitrogen);
x, y, and z represent atomic percent. A soft magnetic alloy film having a composition in which x, y, and z are respectively 75≦x<94, 6≦y<25, 0.1≦z≦20, and x+y+z=100. 3. The soft magnetic alloy film according to claim 2, wherein t≦1000 Å, where t is the thickness of one layer of the multilayer film. 4 When forming a magnetic alloy film by sputtering using an alloy target having the composition shown by T x ′M y ′, T x M y N z is obtained by periodically mixing N 2 gas into Ar sputter gas. A layer having a composition represented by T x ′M y ′ and a layer having a composition represented by T At least one metal selected from the group consisting of Fe, Co, Mn, and Ni; M is Nb, Zr,
at least one metal selected from the group consisting of Ti, Ta, W, Cr, and Hf; N is N (nitrogen);
x, y, z and x', y' represent atomic percent, respectively, where x, y, z, x' and y' are 75≦x<94,
6≦y<25, 0.1≦z≦20, x+y+z=100, 75
A method for forming a soft magnetic alloy film in which ≦x′<94, 6≦y′<25, and x′+y′=100. 5. The method of forming a soft magnetic alloy film according to claim 4, wherein the mixing period of N 2 gas is set so that the thickness of one layer is 1000 Å or less.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5405486A JPS62210607A (en) | 1986-03-12 | 1986-03-12 | Magnetic alloy film |
| DE19873707522 DE3707522A1 (en) | 1986-03-12 | 1987-03-09 | MAGNETIC NITRIDE FILM |
| US07/024,141 US4836865A (en) | 1986-03-12 | 1987-03-10 | Magnetic nitride film |
| US07/445,105 US5049209A (en) | 1986-03-12 | 1989-12-07 | Magnetic nitride film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5405486A JPS62210607A (en) | 1986-03-12 | 1986-03-12 | Magnetic alloy film |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13460997A Division JP2856725B2 (en) | 1997-05-26 | 1997-05-26 | Method of forming soft magnetic alloy film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62210607A JPS62210607A (en) | 1987-09-16 |
| JPH0573242B2 true JPH0573242B2 (en) | 1993-10-14 |
Family
ID=12959899
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5405486A Granted JPS62210607A (en) | 1986-03-12 | 1986-03-12 | Magnetic alloy film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62210607A (en) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2533860B2 (en) * | 1986-09-24 | 1996-09-11 | 株式会社日立製作所 | Magnetic superlattice film and magnetic head using the same |
| JP2790451B2 (en) * | 1987-04-10 | 1998-08-27 | 松下電器産業株式会社 | Soft magnetic alloy film containing nitrogen |
| JP2690904B2 (en) * | 1987-08-10 | 1997-12-17 | 株式会社日立製作所 | Heat resistant magnetic film |
| JPH07100835B2 (en) * | 1987-11-11 | 1995-11-01 | 東北特殊鋼株式会社 | Magnetic thin film and manufacturing method thereof |
| JPH0827897B2 (en) * | 1988-03-09 | 1996-03-21 | 松下電器産業株式会社 | Magnetic head |
| US4969962A (en) * | 1988-08-20 | 1990-11-13 | Victor Company Of Japan, Ltd. | Magnetic alloys for magnetic head |
| JPH0744123B2 (en) * | 1989-02-08 | 1995-05-15 | 富士写真フイルム株式会社 | Method for manufacturing soft magnetic thin film |
| JPH0744108B2 (en) * | 1989-01-26 | 1995-05-15 | 富士写真フイルム株式会社 | Soft magnetic thin film |
| JP2839554B2 (en) * | 1989-06-14 | 1998-12-16 | 株式会社日立製作所 | Magnetic film and magnetic head using the same |
| EP0466159B1 (en) * | 1990-07-13 | 1996-02-28 | Fuji Photo Film Co., Ltd. | Composite magnetic head |
| JP2698864B2 (en) * | 1990-07-26 | 1998-01-19 | 富士写真フイルム株式会社 | Method for manufacturing soft magnetic thin film |
| US5262915A (en) * | 1990-08-23 | 1993-11-16 | Tdk Corporation | Magnetic head comprising a soft magnetic thin film of FeNiZrN having enhanced (100) orientation |
| US5589221A (en) * | 1994-05-16 | 1996-12-31 | Matsushita Electric Industrial Co., Ltd. | Magnetic thin film, and method of manufacturing the same, and magnetic head |
Citations (9)
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|---|---|---|---|---|
| JPS4949803A (en) * | 1972-09-18 | 1974-05-15 | ||
| JPS5494428A (en) * | 1977-12-30 | 1979-07-26 | Ibm | Amorphous metal layer |
| JPS5533093A (en) * | 1978-08-28 | 1980-03-08 | Ibm | Thin film magnetic material and method of manufacturing same |
| JPS5633453A (en) * | 1979-08-27 | 1981-04-03 | Takeshi Masumoto | Iron-base amorphous alloy having high magnetic flux density and small magnetostriction |
| JPS5827941A (en) * | 1981-08-11 | 1983-02-18 | Hitachi Ltd | Manufacture of amorphous thin film |
| JPS58147538A (en) * | 1982-02-25 | 1983-09-02 | Hiroyasu Fujimori | Sputtered amorphous magnetic material and its manufacture |
| JPS60220913A (en) * | 1984-04-18 | 1985-11-05 | Sony Corp | Magnetic thin film |
| US5049209A (en) * | 1986-03-12 | 1991-09-17 | Matsushita Electric Industrial Co., Ltd. | Magnetic nitride film |
| JPH0456110A (en) * | 1990-06-22 | 1992-02-24 | Toshiba Corp | External cooling device for transformer |
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1986
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Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4949803A (en) * | 1972-09-18 | 1974-05-15 | ||
| JPS5494428A (en) * | 1977-12-30 | 1979-07-26 | Ibm | Amorphous metal layer |
| JPS5533093A (en) * | 1978-08-28 | 1980-03-08 | Ibm | Thin film magnetic material and method of manufacturing same |
| JPS5633453A (en) * | 1979-08-27 | 1981-04-03 | Takeshi Masumoto | Iron-base amorphous alloy having high magnetic flux density and small magnetostriction |
| JPS5827941A (en) * | 1981-08-11 | 1983-02-18 | Hitachi Ltd | Manufacture of amorphous thin film |
| JPS58147538A (en) * | 1982-02-25 | 1983-09-02 | Hiroyasu Fujimori | Sputtered amorphous magnetic material and its manufacture |
| JPS60220913A (en) * | 1984-04-18 | 1985-11-05 | Sony Corp | Magnetic thin film |
| US5049209A (en) * | 1986-03-12 | 1991-09-17 | Matsushita Electric Industrial Co., Ltd. | Magnetic nitride film |
| JPH0456110A (en) * | 1990-06-22 | 1992-02-24 | Toshiba Corp | External cooling device for transformer |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62210607A (en) | 1987-09-16 |
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